Abstract A process for formation of cell having a self-aligned capacitor contact and a structure thereof are disclosed. The capacitance of the capacitor is increased, and the leakage of the current is decreased through the provision of the self-aligned capacitor contact and by lowering the impurity concentration in the p-n junction of the capacitor. The conventional DRAM cell has disadvantages such that: the n+ region connected to the node polysilicon of the capacitor section gives an adverse effect to the leakage of current; and there is the risk that the node polysilicon and the gate polysilicon might be contacted due to the misalignment during the photolithographic process for connecting the n+ region to the node polysilicon after forming the stack polysilicon. In order to reduce this risk, the gap between the gate polysilicon and the node polysilicon has to be increased, but this increases the area of the DRAM cell. The present invention overcomes the above disadvantages in the following manner. That is, a side wall 208a is separately formed in such manner that the p-n junction of the capacitor section and the p-n junction of the bit line contact should be n- and n+ respectively, with an n+ ion implantation being carried out thereafter. Further, a side wall 208 is formed, and at the same time, an n- region contact for the capacitor is formed, in such a manner that the contact between the node electrode and the n- region should be self-aligned.
A process for formation of a cell having a self-aligned capacitor contact, comprising: a step of forming a thin oxide layer and a field oxide layer upon a substrate, and stacking a gate polysilicon layer and an oxide layer to form a gate pattern; a step of forming n- regions (205a, 205b), and stacking an oxide layer (206) and a layer of polysilicon (207); a step of defining a region of a storage electrode contact for connecting a storage electrode of a capacitor to said n- region (205a) by patterning said layer of polysilicon (207); a step of simultaneously forming a side wall spacer (208) and said storage electrode contact by subjecting said oxide layer (206) to a reactive ion etching to self-align the storage electrode contact between the storage electrode of the capacitor and said n- region (205a); a step of forming a storage electrode and a capacitor insulating layer on said storage electrode contact, and then, forming a plate electrode thereupon; a step of subjecting said oxide layer (206) to a separate step of a reactive ion etching to form a side wall (208a); a step of forming an n+ region for a bit line contact; and a step of successively forming an insulating oxide layer and a planarizing oxide layer after the formation of said n+ region.
Claim 2
Dependent Claim
220 words
A process for formation of a cell having a self-aligned capacitor contact, comprising: a step of forming a thin oxide layer and a field oxide layer upon a substrate, and stacking a gate polysilicon layer and an oxide layer to form a gate pattern; a step of forming n- regions (205a, 205b), and stacking an oxide layer (206) and a layer of polysilicon (207); a step of defining a region of a storage electrode contact for connecting a storage electrode of a capacitor to said n- region (205a) by patterning said layer of polysilicon (207); a step of simultaneously forming a side wall spacer (208) and said storage electrode contact by subjecting said oxide layer (206) to a reactive ion etching to self-align the storage electrode contact between the storage electrode of the capacitor and said n- region (205a); a step of forming a storage electrode and a capacitor insulating layer on said storage electrode contact, and then, forming a plate electrode thereupon; a step of subjecting said oxide layer (206) to a separate step of a reactive ion etching to form a side wall (208a); a step of forming an n+ region for a bit line contact; and a step of successively forming an insulating oxide layer and a planarizing oxide layer after the formation of said n+ region.
Claim 3
Dependent Claim
59 words
The process for formation of a cell having a self-aligned capacitor contact as claimed in claim 1, wherein said side wall 208a is separately formed in such a manner that the p-n junction of said capacitor section and the p-n junction of said bit line contact should become n- and n+ respectively, and n+ ion implantations are carried out.