Patent US5148260A successfully refreshed from Google Patents.
US5148260A
Expired / Lapsed
US
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Semiconductor device having an improved air-bridge lead structure
Assignee: Toshiba Corp
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Filing: 1990-09-07
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Granted: 1992-09-15
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Expires: 2010-09-07
Abstract
Abstract A semiconductor device having an improved air-bridge lead structure is provided. The improved air-bridge lead structure has a higher mechanical strength and a lower electric resistance with a smaller electric capacitance.
Inventors
- 👤 Tomotoshi Inoue
- 👤 Toshiyuki Terada
- 👤 Kenichi Tomita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/483; H10W20/41; H10W20/43; H10W20/432
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
116 words
A semiconductor device having an air-bridge lead structure comprising: a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; and an air-bridge lead electrically connected between said plural electrodes, said air-bridge lead having at least a first metal layer and a second metal layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer, said first metal layer having a Young's modulus higher than that of said second metal layer, and said second metal layer having a specific electric resistance lower than that of said first metal layer.
Claim 2
Dependent Claim
116 words
A semiconductor device having an air-bridge lead structure comprising: a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; and an air-bridge lead electrically connected between said plural electrodes, said air-bridge lead having at least a first metal layer and a second metal layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer, said first metal layer having a Young's modulus higher than that of said second metal layer, and said second metal layer having a specific electric resistance lower than that of said first metal layer.
Claim 3
Dependent Claim
23 words
The semiconductor device of claim 1, wherein said second metal layer has a cross-sectional area greater than that of said first metal layer.
Claim 4
Dependent Claim
31 words
The semiconductor device of claim 2, wherein said second metal layer includes a metal-plated layer, and said first metal layer includes a metal layer formed by use of an evaporation technique.
Claim 5
Dependent Claim
48 words
The semiconductor device of claim 1, wherein said first metal layer includes a metal selected from W, Mo, Rh and Ru or a compound including at least one of W, Mo, Rh and Ru and a second metal layer including a metal selected from Au, Al and Cu.
Claim 6
Dependent Claim
18 words
The semiconductor device of claim 4, wherein said compounds include WAl, WSi 2 , and MoSi 2 .
Claim 7
Dependent Claim
119 words
A semiconductor device having an air-bridge lead structure comprising: a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; a first air-bridge lead layer connected between said plurality of electrodes; a second air-bridge lead layer formed on said first air-bridge lead layer; and said first air-bridge lead layer having a Young's modulus higher than that of said second air-bridge lead layer, and said second air-bridge lead layer having a specific electric resistance lower than that of said first air-bridge lead layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer.
Claim 8
Dependent Claim
119 words
A semiconductor device having an air-bridge lead structure comprising: a semiconductor substrate having a surface; a plurality of electrodes formed on the surface of said semiconductor substrate; a first air-bridge lead layer connected between said plurality of electrodes; a second air-bridge lead layer formed on said first air-bridge lead layer; and said first air-bridge lead layer having a Young's modulus higher than that of said second air-bridge lead layer, and said second air-bridge lead layer having a specific electric resistance lower than that of said first air-bridge lead layer, said first metal layer being integrally formed over an entire bottom length of said air-bridge lead and said second metal layer being formed on top of said first metal layer.
Claim 9
Dependent Claim
25 words
The semiconductor device of claim 6, wherein said second air-bridge lead layer has a cross-sectional area greater than that of said first air-bridge lead layer.
Claim 10
Dependent Claim
51 words
The semiconductor device of claim 6, wherein said first air-bridge lead layer includes a metal selected from W, Mo, Rh and Ru, or includes a compound including at least one of W, Mo, Rh and Ru, and said second air-bridge lead layer includes a metal selected from Au, Al and Cu.
Claim 11
Dependent Claim
22 words
The semiconductor device of claim 8, wherein said first air-bridge lead layer includes W, and said second air-bridge lead layer includes Au.
Claim 12
Dependent Claim
18 words
The semiconductor device of claim 8, wherein said compounds include WAl, WSiO 2 , and MoSiO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |