US5146295A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light emitting device having a superlattice buffer layer
Assignee: Omron Corp
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Filing: 1990-12-05
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Granted: 1992-09-08
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Expires: 2010-12-05
Abstract
Abstract A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.
Inventors
- 👤 Koichi Imanaka
- 👤 Fumihiko Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:23
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; B; B82; B82Y; B82Y20/00; H10H20/01; H10H20/011; H10H20/013
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
A semiconductor device comprising: an n-type GaAs semiconductor substrate layer; a semiconductor device active GaAs layer disposed on said substrate layer; a first superlattice buffer layer comprising a plurality of pairs of layers each pair having, an InGaAs layer, which has a lattice mismatching quality with respect to said substrate layer, and a GaAs layer; a second superlattice buffer layer having a plurality of pairs of layers, each pair comprising a GaAs layer paired with an AlGaAs layer, each of said paired layers having a lattice matching quality with respect to said substrate layer; and where said first and second superlattice buffer layers being formed between said substrate layer and said semiconductor device active layer.
Claim 2
Dependent Claim
115 words
A semiconductor device comprising: an n-type GaAs semiconductor substrate layer; a semiconductor device active GaAs layer disposed on said substrate layer; a first superlattice buffer layer comprising a plurality of pairs of layers each pair having, an InGaAs layer, which has a lattice mismatching quality with respect to said substrate layer, and a GaAs layer; a second superlattice buffer layer having a plurality of pairs of layers, each pair comprising a GaAs layer paired with an AlGaAs layer, each of said paired layers having a lattice matching quality with respect to said substrate layer; and where said first and second superlattice buffer layers being formed between said substrate layer and said semiconductor device active layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-08 | 1996-03-09 | 1996-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-08 | 2000-03-09 | 2000-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-08 | 2004-03-09 | 2004-09-08 | $7700.00 | Window Closed / Lapsed |