Semiconductor device

Abstract

Abstract PURPOSE:To improve characteristics by forming a non-doped AlGaAs layer and a GaAs/AlGaAs superlattice as buffer layers, making a non-doped GaAs channel layer thinner than the AlGaAs buffer layer and shaping an AlGaAs electron supply layer. CONSTITUTION:A non-doped GaAs channel layer 5 is grown on a buffer constituted of an AlGaAS layer 2, a superlattice 3 and an AlGaAs layer 4 from the substrate 1 side, an a two-dimensional electron gas 5e is formed near a hetero-junction interface with an AlGaAs electron supply layer 6. Consequently, the disturbance of the interface of buffer layer/channel layer is inhibited, an adverse effect such as the deterioration of mobility on the two-dimensional electron gas 5e is prevented even when the GaAs channel layer 5 is thin. Accordingly, the GaAs channel layer 5 is thinned, thus improving characteristics such as the displacement of pinch-off voltage due to the spreading of the two-dimensional electron gas 5e.

Inventors

• 👤 Tatsuya Ohori
• 👤 達也 大堀

Bibliographic Details