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US5139624A
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US
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Method for making porous semiconductor membranes
Assignee: SRI International Inc
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Filing: 1990-12-06
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Granted: 1992-08-18
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Expires: 2010-12-06
Abstract
Abstract A method for making a self-supporting porous semiconductor membrane characterized by the electrolytic etching of a surface of a semiconductor wafer until at least one pore propagates fully through the wafer. The wafer forms the anode of the cell and a relatively inert material, such as platinum, forms the cathode of the cell. The electrolyte is a mixture of HF, H 2 O and possibly a wetting agent. One side of the semiconductor wafer is shielded from the electrolyte and pores are allowed to propagate through the body of the wafer towards the shielded side. In one embodiment of the invention the pores are allowed to propagate fully through the body of the wafer and in another embodiment the pores are partially propagated through the wafer and then material is removed from the shielded side of the wafer to expose the pores. Also disclosed are asymmetrical filters and molecular sieves, an electronic component utilizing a porous semiconductor membrane and a micromechanical device using a porous semiconductor membrane.
Inventors
- 👤 Peter C. Searson
- 👤 John M. MaCaulay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:47
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/014
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
90 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface; developing a depletion zone within said semiconductor proximate to said first surface such that electrochemical competition at said first surface causes incipient pores to form; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said incipient pores at said first surface to a second surface thereof, thereby creating a porous semiconductor membrane.
Claim 2
Independent Claim
90 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface; developing a depletion zone within said semiconductor proximate to said first surface such that electrochemical competition at said first surface causes incipient pores to form; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said incipient pores at said first surface to a second surface thereof, thereby creating a porous semiconductor membrane.
Claim 3
Dependent Claim
31 words
A method for making a porous semiconductor membrane as recited in claim 1 further comprising the step of preventing said fluid from contacting said surface during the processing of said semiconductor.
Claim 4
Dependent Claim
35 words
A method for making a porous semiconductor membrane as recited in claim 1 wherein said step of processing said semiconductor includes growing pores into said first surface and subsequently removing material from said second surface.
Claim 5
Independent Claim
79 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid including HF and H 2 O which is capable of removing material from said first surface; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extends through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane.
Claim 6
Independent Claim
79 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid including HF and H 2 O which is capable of removing material from said first surface; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extends through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane.
Claim 7
Dependent Claim
28 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein a substantially constant current is caused to flow between said semiconductor and said fluid.
Claim 8
Dependent Claim
23 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein a substantially constant voltage is applied to said semiconductor.
Claim 9
Dependent Claim
37 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein said step of processing said semiconductor includes growing pores into said first surface until at least one pore opens on said second surface.
Claim 10
Dependent Claim
26 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein said semiconductor is selected from the group of Si, Ge, and GaAs.
Claim 11
Dependent Claim
51 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein the desired pore sizes, porosity and pore orientations are controlled by one or more parameters including the crystallographic orientation of said semiconductor, the doping level of said semiconductor, the composition of said fluid and the current density.
Claim 12
Dependent Claim
33 words
A method for making a porous semiconductor membrane as recited in claim 9 wherein at least one of said parameters is varied during said processing step to vary the formation of said pores.
Claim 13
Dependent Claim
21 words
A method for making a porous semiconductor membrane as recited in claim 4 wherein said fluid further includes a wetting agent.
Claim 14
Dependent Claim
23 words
A method for making a porous semiconductor membrane as recited in claim 11 wherein said wetting agent includes C 2 H 5 OH.
Claim 15
Independent Claim
87 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid, including a wetting agent, which is capable of removing material from said first surface; preventing said fluid from contacting a second surface of said semiconductor; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to said second surface, thereby creating a porous semiconductor membrane.
Claim 16
Independent Claim
87 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid, including a wetting agent, which is capable of removing material from said first surface; preventing said fluid from contacting a second surface of said semiconductor; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to said second surface, thereby creating a porous semiconductor membrane.
Claim 17
Dependent Claim
23 words
A method for making a porous semiconductor membrane as recited in claim 13 wherein said wetting agent includes C 2 H 5 OH.
Claim 18
Independent Claim
114 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface: causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane, wherein said processing step includes growing pores into said first surface until at least one elongated pore opens on said second surface and then removing material from said second surface in a direction non-parallel to said at least one elongated pore.
Claim 19
Independent Claim
114 words
A method for making a porous semiconductor membrane comprising the steps of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface: causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane, wherein said processing step includes growing pores into said first surface until at least one elongated pore opens on said second surface and then removing material from said second surface in a direction non-parallel to said at least one elongated pore.
Claim 20
Independent Claim
96 words
A method for making a porous semiconductor membrane comprising of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane, wherein said processing step includes growing pores into said first surface and then removing material from said second surface to expose at least one pore.
Claim 21
Independent Claim
96 words
A method for making a porous semiconductor membrane comprising of: exposing a first surface of a semiconductor to a fluid which is capable of removing material from said first surface; causing an electrical current to flow between said semiconductor and said fluid; and processing said semiconductor such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous semiconductor membrane, wherein said processing step includes growing pores into said first surface and then removing material from said second surface to expose at least one pore.
Claim 22
Independent Claim
82 words
A method for making a porous silicon membrane comprising the steps of: exposing a first surface of a silicon wafer to a fluid comprising HF and H 2 O while preventing said mixture for contacting a second surface of said wafer; causing an electrical current to flow between said wafer and said mixture; and processing said wafer such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous silicon membrane.
Claim 23
Independent Claim
82 words
A method for making a porous silicon membrane comprising the steps of: exposing a first surface of a silicon wafer to a fluid comprising HF and H 2 O while preventing said mixture for contacting a second surface of said wafer; causing an electrical current to flow between said wafer and said mixture; and processing said wafer such that a plurality of pores extend through said semiconductor from said first surface to a second surface thereof, thereby creating a porous silicon membrane.
Claim 24
Dependent Claim
28 words
A method for making a porous silicon membrane as recited in claim 17 wherein the percentage by weight of HF is in the range of 0.1% to 50%.
Claim 25
Dependent Claim
21 words
A method for making a porous silicon membrane as recited in claim 18 wherein said mixture further includes a wetting agent.
Claim 26
Dependent Claim
36 words
A method for making a porous silicon membrane as recited in claim 19 wherein a constant current is caused to flow between said wafer and said mixture in the range of 0.1-200 milliamperes per square centimeter.
Claim 27
Dependent Claim
34 words
A method for making a porous silicon membrane as recited in claim 19 wherein a constant voltage is applied to said wafer in the range of 0-30 volts relative to a standard hydrogen electrode.
Claim 28
Dependent Claim
37 words
A method for making a porous semiconductor membrane as recited in claim 17 wherein said step of processing said semiconductor includes growing pores into said first surface until at least one pore opens on said second surface.
Claim 29
Dependent Claim
38 words
A method for making a porous semiconductor membrane as recited in claim 22 wherein said step of processing said semiconductor further includes removing material from said second surface in a direction non-parellel to said at least one pore.
Claim 30
Dependent Claim
41 words
A method for making a porous semiconductor membrane as recited in claim 17 wherein said step of processing said semiconductor includes growing pores into said first surface and then removing material from said second surface to expose at least one pore.
References Cited (Backward Citations)
US4069121A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |