Positive working polyamic acid/imide photoresist compositions and their use as dielectrics

Claim 1

A multilevel metal or oxide article of manufacture on an integrated circuit having a photoimaged dielectric insulation between the metal or oxide levels said dielectric insulation comprising: (a) the condensation product of an aromatic dianhydride and an aromatic di-primary amine having from about 10 to about 50 mole percent of the di-primary amine having the formula: ##STR2## where R contains one or more phenyl rings connected by oxygen, SO 2 , alkyl, fluoroalkyl, or biphenyl linkages; and (b) a diazoquinone photoactive sensitizer; (c) from 10 to 20 solids weight per cent of a second polymer to improve developing latitude, said second polymer selected from the group consisting of novolac resin, dimethylamino-benzaldehyde, diisopropyl amine, trihexyl amine, dibenzyl amine, N-(triethoxysilylpropyl) urea, p-dimethylamino benzaldehyde, isocyanatopropyl- triethoxysilane and mixtures thereof; (d) from 1% to about 12% by weight of a compound selected from the group consisting of polyurethanes and cyclo aliphatic diepoxides; (e) the dielectric insulation is characterized by less tendency to outgas to form pinholes, greater solubility difference between exposed and unexposed regions, unexposed and undeveloped regions having resistivity in the range of 1×10 16 ohm cm., a dielectric strength greater than 5×10 5 volt/cm, while also having less susceptibility to cracking due to mismatch of thermal coefficients and the insulation layer serving as a photoresist which need not be removed after imaging.