Circuit for testing internal data bus of integrated circuit

Claim 2

In an internal bus test circuit for a semiconductor integrated circuit having a plurality of function modules and an internal bus formed of a plurality of lines for interconnecting said function modules, the improvement comprising a circuit configuration for providing detectable changes to the bus to enable monitoring of internal bus errors, including: a plurality of switch means (15, 16, 17, 18) coupled to corresponding ones of said function modules, each of said switch means being operable for isolating from said internal bus at least a set of output lines of the corresponding function module; and bus data setting circuit means (19) operable for selectively setting each of said plurality of lines constituting said internal bus to a high potential level and a low potential level; thereby selectively setting said lines of the internal bus to high and low potential levels and producing detectable changes in at least one of voltage and current of said lines responsively to setting said lines to said high and low potentials for enabling detection of a fault in said internal bus.

Claim 3

In an internal bus test circuit for a semiconductor integrated circuit having a plurality of function modules, an internal bus formed of a plurality of lines for interconnecting said function modules, a set of external pads for connection to external pins of the integrated circuit, one of said function modules being disposed between said external pads and said internal bus, the improvement comprising: a plurality of switch means (15, 16, 17, 18) coupled to corresponding ones of said function modules, each of said switch means being operable for isolating from said internal bus at least a set of output lines of the corresponding function module; a by-pass bus (22); and by-pass circuit means (20, 21) operable for selectively establishing a condition in which said internal bus is connected to said external pads through said one of said function modules disposed between the internal bus and the external pads and a condition in which the internal bus is connected directly to the external pads through said by-pass bus and by-passing said one function module; thereby selectively setting each of said external pads to a high potential level and a low potential level and producing detectable changes in power supply current or voltage of said integrated circuit responsively to setting said external pads to high and low potential levels for enabling detection of a fault in said internal bus.

Claim 4

In an internal bus test circuit for a semiconductor integrated circuit having a plurality of function modules, an internal bus formed of a plurality of lines for interconnecting said function modules, a set of external pads for connection to external pins of the integrated circuit, one of said function modules being disposed between said external pads and said internal bus, the improvement comprising: a plurality of switch means (15, 16, 17, 18) coupled to corresponding ones of said function modules, each of said switch means being operable for isolating from said internal bus at least a set of output lines of the corresponding function module; a by-pass bus (22); and by-pass circuit means (20, 21) operable for selectively establishing a condition in which said internal bus is connected to said external pads through said one of said function modules disposed between the internal bus and the external pads and a condition in which the internal bus is connected directly to the external pads through said by-pass bus and by-passing said one function module; thereby selectively setting each of said external pads to a high potential level and a low potential level and producing detectable changes in power supply current or voltage of said integrated circuit responsively to setting said external pads to high and low potential levels for enabling detection of a fault in said internal bus.

Claim 5

An internal bus test circuit according to claim 2, comprising bus data setting circuit means (19) operable for selectively setting each of said plurality of lines forming said internal bus to a high potential level and a low potential level; thereby enabling detection of a fault in said internal bus by producing, at said external pads, detectable changes in voltage or current of each said line of the internal bus occurring responsively to selectively setting said lines to high and low potential levels by said bus data setting circuit means.

Claim 6

An internal bus test circuit according to claim 2, wherein said function modules are connected in parallel to said internal bus and are interconnected thereby.

Claim 7

In a method for testing an internal bus for a semiconductor integrated circuit having: a plurality of function modules, an internal bus formed of a plurality of lines for interconnecting said function modules, a set of external pads for connection to external pins of the integrated circuit, one of said function modules being disposed between said external pads and said internal bus; a plurality of switch means (15, 16, 17, 18) coupled to corresponding ones of said function modules, each of said switch means being operable for isolating from said internal bus at least a set of output lines of the corresponding function module; a by-pass bus (22), and by-pass circuit means (20, 21), the improvement comprising the steps of: for selectively establishing first and second conditions by operating said by-pass circuit means, including: using said by-pass circuit means in said first condition for connecting said internal bus to said external pads through said one of said function modules disposed between the internal bus and the external pads and using said by-pass means in said second condition for connecting said internal bus directly to the external pads through said by-pass bus and by-passing said one function module; selectively setting each of said external pads to a high potential level and a low potential level, and monitoring changes in at least one of power supply current and voltage provided to said integrated circuit occurring responsively to said step of selectively setting said external pads to high and low potential levels, thereby detecting a fault in said internal bus.

Claim 8

In a method for testing an internal bus for a semiconductor integrated circuit having: a plurality of function modules, an internal bus formed of a plurality of lines for interconnecting said function modules, a set of external pads for connection to external pins of the integrated circuit, one of said function modules being disposed between said external pads and said internal bus; a plurality of switch means (15, 16, 17, 18) coupled to corresponding ones of said function modules, each of said switch means being operable for isolating from said internal bus at least a set of output lines of the corresponding function module; a by-pass bus (22), and by-pass circuit means (20, 21), the improvement comprising the steps of: for selectively establishing first and second conditions by operating said by-pass circuit means, including: using said by-pass circuit means in said first condition for connecting said internal bus to said external pads through said one of said function modules disposed between the internal bus and the external pads and using said by-pass means in said second condition for connecting said internal bus directly to the external pads through said by-pass bus and by-passing said one function module; selectively setting each of said external pads to a high potential level and a low potential level, and monitoring changes in at least one of power supply current and voltage provided to said integrated circuit occurring responsively to said step of selectively setting said external pads to high and low potential levels, thereby detecting a fault in said internal bus.

Claim 9

The method recited in claim 5, wherein said semiconductor integrated circuit further includes bus data setting circuit means (19), comprising the further steps of: selectively setting each of said plurality of lines forming said internal bus to a high potential level and a low potential level using said bus data setting circuit means; monitoring, at said external pads, changes in at least one of voltage and current of each said line of the internal bus occurring responsively to said step of selectively setting said lines to high and low potential levels, thereby detecting a fault in said internal bus.