Abstract A method of producing a GaAs single crystal substrate comprises the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050° to 1150° C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910° to 1050° C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520°-730° C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400° C. at a cooling rate of 15°-30° C./min.
A method of producing a GaAs single crystal substrate comprising the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050° to 1150° C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910° to 1050° C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520°-730° C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400° C. at a cooling rate of 15°-30° C./min.
Claim 2
Independent Claim
165 words
A method of producing a GaAs single crystal substrate comprising the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050° to 1150° C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910° to 1050° C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1°-25° C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520°-730° C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400° C. at a cooling rate of 15°-30° C./min.