US4547256A
Expired / Lapsed
US
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Method for thermally treating a semiconductor substrate
Assignee: Motorola Solutions Inc
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Filing: 1982-12-20
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Granted: 1985-10-15
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Expires: 2002-12-20
Abstract
Abstract Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal treatment temperature and then is further heated to a higher temperature at which the thermal treatment occurs. Following the thermal treatment the substrate is isothermally cooled to a sufficiently low temperature to avoid thermally induced defects.
Inventors
- 👤 Richard W. Gurtler
- 👤 Ronald N. Legge
- 👤 Israel A. Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; C; C30; C30B; C30B13/00; C30B13/16; C30B13/22; C30B13/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3818; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905; Y10S148/00; Y10S148/024
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
76 words
A process for converting polycrystalline material to macrocrystalline material comprising the steps of: isothermally heating said polycrystalline material to a first elevated temperature; further heating a localized portion of said polycrystalline material by an impinging energy beam to form molten material in a localized zone; causing said zone to traverse said polycrystalline material, and refreezing said molten material as macrocrystalline material as said zone passes; and isothermally cooling said macrocrystalline material to a second lower temperature.
Claim 2
Dependent Claim
76 words
A process for converting polycrystalline material to macrocrystalline material comprising the steps of: isothermally heating said polycrystalline material to a first elevated temperature; further heating a localized portion of said polycrystalline material by an impinging energy beam to form molten material in a localized zone; causing said zone to traverse said polycrystalline material, and refreezing said molten material as macrocrystalline material as said zone passes; and isothermally cooling said macrocrystalline material to a second lower temperature.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said step of isothermally heating comprises scanning said polycrystalline material with an energetic electron beam.
Claim 4
Dependent Claim
19 words
The process of claim 1 wherein said energy beam comprises a laser beam, ion beam, or an electron beam.
Claim 5
Dependent Claim
30 words
The process of claim 2 wherein said step of isothermally cooling comprises allowing said material to radiate to the surrounding ambient while scanning said material with an energetic electron beam.
Claim 6
Dependent Claim
21 words
The process of claim 1 wherein said step of isothermally heating comprises rapidly inserting said polycrystalline material into an isothermal region.
Claim 7
Dependent Claim
21 words
The process of claim 5 wherein said step of isothermally cooling comprises rapidly removing said macrocrystalline material from an isothermal region.
Claim 8
Dependent Claim
16 words
The process of claim 5 wherein said polycrystalline material is placed on a thermally conductive substrate.
Claim 9
Dependent Claim
46 words
A process for thermally treating a semiconductor substrate which comprises the steps of: further heating said substrate to a second temperature higher than said first elevated temperature for thermally treating said substrate; and isothermally cooling said substrate to a third temperature lower than said second temperature.
Claim 10
Dependent Claim
46 words
A process for thermally treating a semiconductor substrate which comprises the steps of: further heating said substrate to a second temperature higher than said first elevated temperature for thermally treating said substrate; and isothermally cooling said substrate to a third temperature lower than said second temperature.
Claim 11
Dependent Claim
16 words
The process of claim 8 wherein said step of further heating further comprises diffusing said substrate.
Claim 12
Dependent Claim
16 words
The process of claim 8 wherein said step of further heating further comprises oxidizing said substrate.
Claim 13
Dependent Claim
56 words
A process for thermally treating a semiconductor substrate which comprises the steps of: isothermally heating said substrate to a first elevated termperature; locally heating said substrate to a second temperature higher than said first elevated temperature to create a localized molten zone; and isothermally cooling said substrate to a third temperature lower than said second temperature.
Claim 14
Dependent Claim
56 words
A process for thermally treating a semiconductor substrate which comprises the steps of: isothermally heating said substrate to a first elevated termperature; locally heating said substrate to a second temperature higher than said first elevated temperature to create a localized molten zone; and isothermally cooling said substrate to a third temperature lower than said second temperature.
Claim 15
Dependent Claim
15 words
The process of claim 11 further comprising causing said molten zone to traverse said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-14 | 1989-04-15 | 1989-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-14 | 1993-04-15 | 1993-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-14 | 1997-04-15 | 1997-10-15 | $7700.00 | Window Closed / Lapsed |