Heat treatment for single-crystal ga-as wafer

Abstract

Abstract PURPOSE:To obtain a single-crystal Ga-As wafer in high yield having high resistivity independently of carbon concentration in a crystal and also free from the occurrence of slip dislocation by slowly cooling the above wafer from a homogenizing heating temp. to a specific temp. range and then subjecting the above to quasi rapid cooling from a slow cooling-finishing temp. to the prescribed temp. CONSTITUTION:A wafer prepared by slicing a single-crystal Ga-As ingot is cooled slowly through a temp. region from a homogenizing heating temp. of 900-1000 deg.C to 700-800 deg.C at <=20 deg.C/min cooling rate. Subsequently, the above wafer is subjected to heat treatment in which quasi rapid cooling is applied through the temp. region from the above slow cooling-finishing temp. to a temp. lower by at least 150 deg.C at 30-100 deg.C/min cooling rate. By this method, the wafer having high resistivity and free from the occurrence of slip dislocation independently of carbon concentration in a crystal can be obtained.

Inventors

• 👤 Hiroyuki Shiraki
• 👤 弘幸 白木
• 👤 Takashi Atami
• 👤 貴 熱海
• 👤 Wataru Aoki
• 👤 青木　渡
• 👤 Hiroshi Shinyashiki
• 👤 新屋敷　浩
• 👤 Koichi Sasa
• 👤 佐々　絋一

Bibliographic Details