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Patent US5132140A successfully refreshed from Google Patents.
US5132140A
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Process for depositing silicon dioxide films
Assignee: Nippon Sheet Glass Co Ltd
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Filing: 1991-01-29
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Granted: 1992-07-21
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Expires: 2011-01-29
Abstract
Abstract A process for depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by heating a hydrosilicofluoric acid solution substantially saturated with silicon dioxide which has a temperature of not more than 0° C., to a temperature of not less than 25° C.
Inventors
- 👤 Takuji Goda
- 👤 Hirotsugu Nagayama
- 👤 Hideo Kawahara
- 👤 Yasuto Sakai
- 👤 Akihiro Hishinuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:50
CPC Classifications
C; C23; C23C; C23C2/00; C23C2/04; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/25; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/10; C03C2218/11; C03C2218/111
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
A process for depositing a silicon dioxide film on a substrate which comprises preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide at a temperature of not higher than 0° C., elevating the temperature of the substantially saturated solution to a temperature between 25° C. and 70° C., thereby forming a hydrosilicofluoric acid solution supersaturated with silicon dioxide, and immersing a substrate in the supersaturated solution at that temperature so as to deposite a silicon dioxide film onto the surface of the substrate.
Claim 2
Dependent Claim
84 words
A process for depositing a silicon dioxide film on a substrate which comprises preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide at a temperature of not higher than 0° C., elevating the temperature of the substantially saturated solution to a temperature between 25° C. and 70° C., thereby forming a hydrosilicofluoric acid solution supersaturated with silicon dioxide, and immersing a substrate in the supersaturated solution at that temperature so as to deposite a silicon dioxide film onto the surface of the substrate.
Claim 3
Dependent Claim
25 words
The process of claim 1, wherein the temperature of the hydrosilicofluoric acid solution substantially saturated with silicon dioxide is elevated by at least 35° C.
Claim 4
Dependent Claim
23 words
The process of claim 1, wherein the hydrosilicofluoric acid solution supersaturated with silicon dioxide has a temperature of not less than 35° C.
Claim 5
Dependent Claim
41 words
The process of claim 1, wherein the hydrosilicofluoric acid solution substantially saturated with silicon dioxide is a solution obtained by cooling the hydrosilicofluoric acid solution which has been used for the deposition of silicon dioxide film and dissolving silicon dioxide therein.
Claim 6
Dependent Claim
40 words
The process of claim 1, wherein the substantially saturated solution prepared at a temperature of not more than 0° C. is heated to a temperature of not less than 40° C. and the deposition is carried out at that temperature.
Claim 7
Dependent Claim
135 words
A process for depositing a silicon dioxide film on a substrate which comprises the steps of: (a) preparing a hydrosilicofluoric acid solution having a temperature of not less than 25° C supersaturated with silicon dioxide as a treating solution by elevating the temperature of a hydrosilicofluoric acid solution substantially saturated with silicon dioxide, (b) depositing a silicon dioxide film on the surface of a substrate by bringing the substrate into contact with the treating solution, (c) cooling the treating solution used in said step (b) to a temperature of not more than 0° C., (d) dissolving an additional silicon dioxide in the cooled treating solution of said step (c), thereby providing the hydrosilicofluoric acid solution substantially saturated with silicon dioxide to be used in said step (a), and (e) recycling said steps (a) to (d).
Claim 8
Dependent Claim
135 words
A process for depositing a silicon dioxide film on a substrate which comprises the steps of: (a) preparing a hydrosilicofluoric acid solution having a temperature of not less than 25° C supersaturated with silicon dioxide as a treating solution by elevating the temperature of a hydrosilicofluoric acid solution substantially saturated with silicon dioxide, (b) depositing a silicon dioxide film on the surface of a substrate by bringing the substrate into contact with the treating solution, (c) cooling the treating solution used in said step (b) to a temperature of not more than 0° C., (d) dissolving an additional silicon dioxide in the cooled treating solution of said step (c), thereby providing the hydrosilicofluoric acid solution substantially saturated with silicon dioxide to be used in said step (a), and (e) recycling said steps (a) to (d).
Claim 9
Dependent Claim
22 words
The process of claim 6, wherein the treating solution in said step (a) has a temperature of not less than 35° C.
Claim 10
Dependent Claim
67 words
The process of claim 6, wherein the used treating solution to be cooled in said step (c) is at least a part of the treating solution which has been taken out of said step (b) and sent to a separate cooling zone, and the cooled treating solution in the unsaturated state is saturated with silicon dioxide through said step (d) and sent back to said step (a).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-21 | 1996-01-20 | 1996-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-21 | 2000-01-20 | 2000-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-21 | 2004-01-20 | 2004-07-21 | $7700.00 | Window Closed / Lapsed |