Gradient chuck method for wafer bonding employing a convex pressure

Claim 1

A method for bonding a first and a second semiconductor wafer together, which comprises: mounting the first semiconductor wafer on a flat chuck and mounting the second semiconductor wafer on a convex pressure gradient chuck; scrubbing a surface of the first and the second semiconductor wafer to obtain polished surfaces; and pressing the polished surfaces of the first and second semiconductor wafers together by using the flat chuck and the convex pressure gradient chuck to press them together by applying a convex pressure gradient by using pressurized fluid across a surface of the second semiconductor wafer that is in contact with the convex pressure gradient chuck, thereby applying a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck by interconnecting a series of pressure reduction orifices, plenums, and channels which create a convex pressure gradient on the second semiconductor wafer during the pressing of the polished surfaces together.

Claim 2

A method for bonding a first and a second semiconductor wafer together, which comprises: mounting the first semiconductor wafer on a flat chuck and mounting the second semiconductor wafer on a convex pressure gradient chuck; scrubbing a surface of the first and the second semiconductor wafer to obtain polished surfaces; and pressing the polished surfaces of the first and second semiconductor wafers together by using the flat chuck and the convex pressure gradient chuck to press them together by applying a convex pressure gradient by using pressurized fluid across a surface of the second semiconductor wafer that is in contact with the convex pressure gradient chuck, thereby applying a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck by interconnecting a series of pressure reduction orifices, plenums, and channels which create a convex pressure gradient on the second semiconductor wafer during the pressing of the polished surfaces together.

Claim 6

A method of bonding a first and a second semiconductor wafer together, comprising: polishing a surface of the first semiconductor and a surface of the second semiconductor wafer to obtain clean surfaces; pressing the clean surfaces of the first and the second semiconductor wafer together by applying a convex pressure gradient across at least a surface opposite the clean surface of the first semiconductor wafer; and creating the convex pressure gradient by using a pressurized fluid through orifices and channels to create a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck to bond the first and second semiconductor wafers together.

Claim 7

A method of bonding a first and a second semiconductor wafer together, comprising: polishing a surface of the first semiconductor and a surface of the second semiconductor wafer to obtain clean surfaces; pressing the clean surfaces of the first and the second semiconductor wafer together by applying a convex pressure gradient across at least a surface opposite the clean surface of the first semiconductor wafer; and creating the convex pressure gradient by using a pressurized fluid through orifices and channels to create a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck to bond the first and second semiconductor wafers together.

Claim 8

A method for bonding a first and a second semiconductor wafer together which comprises the steps of: scrubbing a surface of the first semiconductor wafer and a surface of the second semiconductor wafer to obtain clean surfaces; spin drying the surface of the first and the second semiconductor wafer to obtain at least a monolayer of liquid left on the surface of at least one wafer; pressing the surface of the first and the second semiconductor wafer together by exerting a convex pressure gradient on at least the first semiconductor wafer; and creating the convex pressure gradient by using a pressurized fluid through orifices and channels to create a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck to bond the first and second semiconductor wafers together.

Claim 9

A method for bonding a first and a second semiconductor wafer together which comprises the steps of: scrubbing a surface of the first semiconductor wafer and a surface of the second semiconductor wafer to obtain clean surfaces; spin drying the surface of the first and the second semiconductor wafer to obtain at least a monolayer of liquid left on the surface of at least one wafer; pressing the surface of the first and the second semiconductor wafer together by exerting a convex pressure gradient on at least the first semiconductor wafer; and creating the convex pressure gradient by using a pressurized fluid through orifices and channels to create a greater pressure centrally located which gradually decreases to a periphery of the convex pressure gradient chuck to bond the first and second semiconductor wafers together.