US5130276A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating surface micromachined structures
Assignee: NXP USA Inc
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Filing: 1991-05-16
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Granted: 1992-07-14
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Expires: 2011-05-16
Abstract
Abstract A method of fabricating a surface micromachined structure is comprised of the steps of providing a semiconductor substrate having a dynamic element partially supported above the semiconductor substrate by a release layer and having a metal contact layer disposed on the dynamic element, forming a protection layer over the metal contact layer, and removing the release layer and the protection layer with an etchant that etches the protection layer at a slower rate than the release layer.
Inventors
- 👤 Victor J. Adams
- 👤 Ronald J. Gutteridge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:55
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/14; G01L1/142; G01L1/148; Y; Y10; Y10S; Y10S148/00; Y10S148/164
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
75 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element partially supported above the semiconductor substrate by a release layer, and having a metal contact layer disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that etches the protection layer at a slower rate than the release layer.
Claim 2
Independent Claim
75 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element partially supported above the semiconductor substrate by a release layer, and having a metal contact layer disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that etches the protection layer at a slower rate than the release layer.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the protection layer and the release layer are removed at approximately the same time.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon oxynitride.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the step of providing a semiconductor substrate includes the release layer being comprised of phosphorus doped glass.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon nitride.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein the step of removing the release layer includes the etchant being comprised of a hydrofluoric acid solution.
Claim 8
Dependent Claim
34 words
The method of claim 1 further comprising the steps of: placing the substrate on an adhesive backing after forming the protection layer; and separating individual die on the substrate before removing the release layer.
Claim 9
Independent Claim
85 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element comprised of polysilicon partially supported above the semiconductor substrate by a release layer comprised of silicon dioxide, and having a metal contact layer comprised of aluminum disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that etches the protection layer at a slower rate than the release layer.
Claim 10
Independent Claim
85 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element comprised of polysilicon partially supported above the semiconductor substrate by a release layer comprised of silicon dioxide, and having a metal contact layer comprised of aluminum disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that etches the protection layer at a slower rate than the release layer.
Claim 11
Dependent Claim
20 words
The method of claim 8 wherein the protection layer and the release layer are removed at approximately the same time.
Claim 12
Dependent Claim
24 words
The method of claim 8 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon oxynitride.
Claim 13
Dependent Claim
23 words
The method of claim 8 wherein the step of providing a semiconductor substrate includes the release layer being comprised of phosphorus doped glass.
Claim 14
Dependent Claim
24 words
The method of claim 8 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon nitride.
Claim 15
Dependent Claim
23 words
The method of claim 8 wherein the step of removing the release layer includes the etchant being comprised of a hydrofluoric acid solution.
Claim 16
Dependent Claim
34 words
The method of claim 8 further comprising the steps of: placing the substrate on an adhesive backing after forming the protection layer; and separating individual die on the substrate before removing the release layer.
Claim 17
Independent Claim
76 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element partially supported above the semiconductor substrate by a release layer, and having a metal contact layer disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that removes the release layer and the protection layer at approximately the same time.
Claim 18
Independent Claim
76 words
A method of fabricating a surface micromachined structure comprising the steps of: providing a semiconductor substrate having a dynamic element partially supported above the semiconductor substrate by a release layer, and having a metal contact layer disposed on the dynamic element; forming a protection layer over the metal contact layer; and removing the release layer and the protection layer with an etchant that removes the release layer and the protection layer at approximately the same time.
Claim 19
Dependent Claim
19 words
The method of claim 15 wherein the protection layer is removed at a slower rate than the release layer.
Claim 20
Dependent Claim
24 words
The method of claim 15 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon oxynitride.
Claim 21
Dependent Claim
23 words
The method of claim 15 wherein the step of providing a semiconductor substrate includes the release layer being comprised of phosphorus doped glass.
Claim 22
Dependent Claim
24 words
The method of claim 15 wherein the step of forming a protection layer includes forming a protection layer comprised of plasma enhanced silicon nitride.
Claim 23
Dependent Claim
38 words
The method of claim 15 further comprising the steps of: placing the substrate on an adhesive backing after forming the protection layer; and sawing the substrate to separate individual die on the substrate before removing the release layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-14 | 1996-01-13 | 1996-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-14 | 2000-01-13 | 2000-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-14 | 2004-01-13 | 2004-07-14 | $7700.00 | Window Closed / Lapsed |