Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures

Claim 1

A method of etching undensified phosphosilicate glass comprising the step of contacting said phosphosilicate glass with an aqueous ammoniacal hydrogen peroxide solution containing from about 4 mole percent to about 8 mole percent ammonium hydroxide and from about 0.5 mole percent to about 4 mole percent hydrogen peroxide in aqueous solution, in an ammonium hydroxide, hydrogen peroxide and water ratio that is generally equivalent to about 1:1:2.5 to 1:1:4, respectively, of an aqueous ammonium hydroxide solution containing 28-30 percent NH 3 by weight, of an aqueous hydrogen peroxide solution containing 30 percent H 2 O 2 by weight, and of water.

Claim 2

A method of etching undensified phosphosilicate glass comprising the step of contacting said phosphosilicate glass with an aqueous ammoniacal hydrogen peroxide solution containing from about 4 mole percent to about 8 mole percent ammonium hydroxide and from about 0.5 mole percent to about 4 mole percent hydrogen peroxide in aqueous solution, in an ammonium hydroxide, hydrogen peroxide and water ratio that is generally equivalent to about 1:1:2.5 to 1:1:4, respectively, of an aqueous ammonium hydroxide solution containing 28-30 percent NH 3 by weight, of an aqueous hydrogen peroxide solution containing 30 percent H 2 O 2 by weight, and of water.

Claim 3

A method of etching completely away a first layer of an undensified phosphosilicate glass overlying a second layer of material without substantially etching said second layer, wherein said second layer includes silicon, silicon dioxide, or polysilicon, said method comprising the step of: immersing said first and second layers in an aqueous ammoniacal hydrogen peroxide solution containing an ammonium hydroxide concentration equal to that provided by about one part by volume of an aqueous NH 4 OH solution having from about 28 percent to 30 percent NH 3 by weight, about one part by volume of an aqueous H 2 O 2 solution having about 30 percent H 2 O 2 by weight, and from about 2.5 parts to about 4.0 parts by volume H 2 O.

Claim 4

A method of etching completely away a first layer of an undensified phosphosilicate glass overlying a second layer of material without substantially etching said second layer, wherein said second layer includes silicon, silicon dioxide, or polysilicon, said method comprising the step of: immersing said first and second layers in an aqueous ammoniacal hydrogen peroxide solution containing an ammonium hydroxide concentration equal to that provided by about one part by volume of an aqueous NH 4 OH solution having from about 28 percent to 30 percent NH 3 by weight, about one part by volume of an aqueous H 2 O 2 solution having about 30 percent H 2 O 2 by weight, and from about 2.5 parts to about 4.0 parts by volume H 2 O.

Claim 5

A method for fabricating three-dimensional microstructures, comprising the steps of: (a) forming a layer of phosphosilicate glass on a substrate; (b) forming at least one via through said phosphosilicate glass layer to expose a portion of said substrate; (c) forming a micromechanical structure overlying said phosphosilicate glass layer, a portion of said micromechanical structure extending through said via and attached to said substrate; and (d) removing said phosphosilicate glass layer while it is still in its as-deposited state with an aqueous ammoniacal hydrogen peroxide solution containing an ammonium hydroxide concentration equal to that provided by about one part by volume of an aqueous NH 4 OH solution having from about 28 percent to 30 percent NH 3 by weight, about one part by volume of an aqueous H 2 O 2 solution having about 30 percent H 2 O 2 by weight, and from about 2.5 parts to about 4.0 parts by volume H 2 O, whereby said phosphosilicate glass layer is substantially completely etched away to form an air gap between said micromechanical structure and said substrate.

Claim 6

A method for fabricating three-dimensional microstructures, comprising the steps of: (a) forming a layer of phosphosilicate glass on a substrate; (b) forming at least one via through said phosphosilicate glass layer to expose a portion of said substrate; (c) forming a micromechanical structure overlying said phosphosilicate glass layer, a portion of said micromechanical structure extending through said via and attached to said substrate; and (d) removing said phosphosilicate glass layer while it is still in its as-deposited state with an aqueous ammoniacal hydrogen peroxide solution containing an ammonium hydroxide concentration equal to that provided by about one part by volume of an aqueous NH 4 OH solution having from about 28 percent to 30 percent NH 3 by weight, about one part by volume of an aqueous H 2 O 2 solution having about 30 percent H 2 O 2 by weight, and from about 2.5 parts to about 4.0 parts by volume H 2 O, whereby said phosphosilicate glass layer is substantially completely etched away to form an air gap between said micromechanical structure and said substrate.

Claim 7

A method for making a vibration sensor having a vibration detection circuit and at least one micromechanical transducing element integrated in a single semiconductor body, comprising the steps of: (a) forming on said semiconductor body a plurality of circuit elements which can be connected to form said detection circuit; (b) depositing a layer of phosphosilicate glass by spin coating onto said silicon body, where it overlies said circuit elements to form a glass layer having a high etch rate in the etchant hereinafter described; (c) forming at least one via in said phosphosilicate glass layer while it still has said high etch rate, to expose a portion of said semiconductor body; (d) forming a micromechanical structure on said high etch rate phosphosilicate glass layer without significantly reducing said high etch rate, said micromechanical structure extending through said via and adhering to said exposed portion of said semiconductor body; (e) immersing said semiconductor body having said circuit elements, said high etch rate phosphosilicate glass layer and said micromechanical structure formed thereon in an aqueous ammoniacal hydrogen peroxide solution to remove said high etch rate phosphosilicate glass layer without substantially etching said circuit elements, wherein said solution is an aqueous solution containing from about 4 mole percent to about 8 mole percent ammonium hydroxide and from about 0.5 mole percent to about 4 mole percent hydrogen peroxide; and (f) applying a metallization layer over said semiconductor body to interconnect said circuit elements, said micromechanical structure, and said semiconductor body, wherein said micromechanical structure and said semiconductor body define an air gap variable capacitor.

Claim 8

A method for making a vibration sensor having a vibration detection circuit and at least one micromechanical transducing element integrated in a single semiconductor body, comprising the steps of: (a) forming on said semiconductor body a plurality of circuit elements which can be connected to form said detection circuit; (b) depositing a layer of phosphosilicate glass by spin coating onto said silicon body, where it overlies said circuit elements to form a glass layer having a high etch rate in the etchant hereinafter described; (c) forming at least one via in said phosphosilicate glass layer while it still has said high etch rate, to expose a portion of said semiconductor body; (d) forming a micromechanical structure on said high etch rate phosphosilicate glass layer without significantly reducing said high etch rate, said micromechanical structure extending through said via and adhering to said exposed portion of said semiconductor body; (e) immersing said semiconductor body having said circuit elements, said high etch rate phosphosilicate glass layer and said micromechanical structure formed thereon in an aqueous ammoniacal hydrogen peroxide solution to remove said high etch rate phosphosilicate glass layer without substantially etching said circuit elements, wherein said solution is an aqueous solution containing from about 4 mole percent to about 8 mole percent ammonium hydroxide and from about 0.5 mole percent to about 4 mole percent hydrogen peroxide; and (f) applying a metallization layer over said semiconductor body to interconnect said circuit elements, said micromechanical structure, and said semiconductor body, wherein said micromechanical structure and said semiconductor body define an air gap variable capacitor.