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US5129850A
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US
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Method of making a molded field emission electron emitter employing a diamond coating
Assignee: Motorola Solutions Inc
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Filing: 1991-08-20
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Granted: 1992-07-14
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Expires: 2011-08-20
Abstract
Abstract A field emission electron emitter employing a coating of diamond material disposed on a surface of a layer of conductive/semiconductive material is constructed by a method including the steps of implanting carbon ions at a surface of a selectively shaped substrate to function as nucleation sites for the diamond formation. A conductive layer is deposited over the diamond and the substrate is removed to leave an electron emitter with a diamond coating.
Inventors
- 👤 Robert C. Kane
- 👤 James E. Jaskie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:39
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J9/00; H01J9/02; H01J9/022; H01J9/025; B; B82; B82Y; B82Y35/00; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30446; H01J2201/30453; H01J2201/30457
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
105 words
A method of forming an electron emitter comprising the steps of: providing a selectively shaped substrate having a major surface; implanting ions, as nucleation sites, onto at least a part of the major surface of the selectively shaped substrate; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto at least a part of the major surface of the substrate and the diamond crystallites; and removing at least some of the selectively shaped substrate, such that an electron emitter having a coating of diamond disposed on at least a part of the conductive/semiconductive layer is formed.
Claim 2
Independent Claim
105 words
A method of forming an electron emitter comprising the steps of: providing a selectively shaped substrate having a major surface; implanting ions, as nucleation sites, onto at least a part of the major surface of the selectively shaped substrate; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto at least a part of the major surface of the substrate and the diamond crystallites; and removing at least some of the selectively shaped substrate, such that an electron emitter having a coating of diamond disposed on at least a part of the conductive/semiconductive layer is formed.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein the step of implanting ions includes implanting carbon ions.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the step of providing a selectively shaped substrate includes anisotropically etching a substrate including semiconductor material.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein the step of providing a selectively shaped substrate includes ion milling of the substrate material.
Claim 6
Independent Claim
148 words
A method for forming a field emission electron emitter comprising the steps of: providing a substrate having a major surface; depositing a layer of patternable material on the major surface of the substrate; patterning the layer of patternable material to provide an aperture therethrough and expose a part of the major surface of the substrate; anisotropically etching the exposed substrate to selectively shape the substrate substantially at the exposed part; implanting ions, as nucleation sites, onto at least a part of the selectively shaped substrate substantially at a region corresponding to the aperture; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto the major surface of the substrate and diamond crystallites; and removing at least some of the selectively shaped substrate, such that a selectively shaped electron emitter having a coating of diamond crystallites disposed thereon is formed.
Claim 7
Independent Claim
148 words
A method for forming a field emission electron emitter comprising the steps of: providing a substrate having a major surface; depositing a layer of patternable material on the major surface of the substrate; patterning the layer of patternable material to provide an aperture therethrough and expose a part of the major surface of the substrate; anisotropically etching the exposed substrate to selectively shape the substrate substantially at the exposed part; implanting ions, as nucleation sites, onto at least a part of the selectively shaped substrate substantially at a region corresponding to the aperture; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto the major surface of the substrate and diamond crystallites; and removing at least some of the selectively shaped substrate, such that a selectively shaped electron emitter having a coating of diamond crystallites disposed thereon is formed.
Claim 8
Dependent Claim
15 words
The method of claim 5 wherein the step of implanting ions includes implanting carbon ions.
Claim 9
Dependent Claim
22 words
The method of claim 5 wherein the step of providing a selectively shaped substrate includes anisotropically etching a substrate of semiconductor material.
Claim 10
Dependent Claim
21 words
The method of claim 5 wherein the step of providing a selectively shaped substrate includes ion milling of the substrate material.
Claim 11
Dependent Claim
22 words
The method of claim 5 and further comprising the step of removing substantially all of the patternable material subsequent to ion implantation.
Claim 12
Independent Claim
172 words
A method for forming a field emission electron emitter comprising the steps of: providing a substrate having a major surface; depositing a layer of patternable material on the major surface of the substrate; patterning the layer of patternable material to provide an aperture therethrough to expose a part of the major surface of the substrate; performing an anisotropic etch to selectively shape the substrate substantially at the exposed part; performing a low angle material evaporation to partially close the aperture; implanting ions, as nucleation sites, onto at least a part of the selectively shaped substrate substantially at a region corresponding to the partially closed aperture; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto the major surface of the substrate and the diamond crystallites; and removing at least some of the selectively shaped substrate, such that an electron emitter having a coating of diamond disposed on at least a part of a major surface of a selectively shaped conductive/semiconductive electrode is formed.
Claim 13
Independent Claim
172 words
A method for forming a field emission electron emitter comprising the steps of: providing a substrate having a major surface; depositing a layer of patternable material on the major surface of the substrate; patterning the layer of patternable material to provide an aperture therethrough to expose a part of the major surface of the substrate; performing an anisotropic etch to selectively shape the substrate substantially at the exposed part; performing a low angle material evaporation to partially close the aperture; implanting ions, as nucleation sites, onto at least a part of the selectively shaped substrate substantially at a region corresponding to the partially closed aperture; growing diamond crystallites preferentially at at least some of the nucleation sites; depositing a layer of conductive/semiconductive material onto the major surface of the substrate and the diamond crystallites; and removing at least some of the selectively shaped substrate, such that an electron emitter having a coating of diamond disposed on at least a part of a major surface of a selectively shaped conductive/semiconductive electrode is formed.
Claim 14
Dependent Claim
15 words
The method of claim 10 wherein the step of implanting ions includes implanting carbon ions.
Claim 15
Dependent Claim
22 words
The method of claim 10 wherein the step of providing a selectively shaped substrate includes anisotropically etching a substrate of semiconductor material.
Claim 16
Dependent Claim
21 words
The method of claim 10 wherein the step of providing a selectively shaped substrate includes ion milling of the substrate material.
Claim 17
Dependent Claim
25 words
The method of claim 10 and further comprising the step of removing substantially all of the patternable material subsequent to performing the anisotropic etch step.
Claim 18
Dependent Claim
30 words
The method of claim 10 and further comprising the step of removing substantially all of the material of the low angle material evaporation subsequent to performing the ion implantation step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-14 | 1996-01-13 | 1996-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-14 | 2000-01-13 | 2000-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-14 | 2004-01-13 | 2004-07-14 | $7700.00 | Window Closed / Lapsed |