Semiconductor device and a circuit suitable for use in an intelligent power switch

Claim 2

A semiconductor power switching device comprising an IGFET and a power semiconductor switch, which semiconductor device comprises a semiconductor body in which the IGFET and power semiconductor switch are formed, the semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, the first region forming at least part of a conductive path to a first main electrode of the power switch, a second region of the opposite conductivity type provided within the first region adjacent the given surface and so as to form with the first region a first pn junction meeting the given surface, and third and fourth regions of the one conductivity type provided adjacent the given surface within the second region such that the third and fourth regions each form with the second region a pn junction meeting the given surface, an insulted gate provided above the given surface for defining a conduction channel providing a gate-controlled connection between the third and fourth regions which form the source and drain regions of the IGFET, a zener diode provided between the second region and the source region of the IGFET, and conductive means provided to the second region remote from the insulated gate for reverse biassing said zener diode so as to inhibit conduction from the second region to the first region.

Claim 3

A semiconductor device according to claim 1, wherein the drain region of the IGFET has an extension region which extends adjacent the given surface towards the source region and is sufficiently lowly doped and sufficiently thin so as during operation to become fully depleted of free charge carriers before the reverse breakdown voltage of the pn junction between the drain region and the second region is reached.

Claim 4

A semiconductor device according to claim 1 or 2, wherein the source and drain regions of the IGFET are formed, respectively, in first and second subsidiary regions of the second region.

Claim 5

A semiconductor device according to claim 3, wherein the second subsidiary region is sufficiently lowly doped and sufficiently thin so as during operation to become fully depleted of free charge carriers before the reverse breakdown voltage of the first pn junction.

Claim 6

A semiconductor device according to claim 3, wherein the power semiconductor switch comprises a fifth region of the opposite conductivity type adjacent the given surface within the first region, a sixth region of the one conductivity type within the fifth region forming with the fifth region a pn junction meeting a surface of the semiconductor body and a further insulated gate provided on the given surface to define a conduction channel providing a gate-controlled connection between the sixth region and the first region.

Claim 7

A semiconductor device according to claim 5, wherein the fifth region comprises a first relatively shallow subsidiary region and a relatively deep relatively highly doped further subsidiary region extending through the first relatively shallow subsidiary region of the fifth region, the sixth region lying within the first relatively shallow subsidiary region and separating the further subsidiary region from the further insulated gate.

Claim 8

A semiconductor device according to claim 3, wherein the first subsidiary region of the second region comprises a relatively shallow region having a relatively deep relatively highly doped further subsidiary region extending through the relatively shallow region, the source region of the IGFET lying within the relatively shallow region of the first subsidiary region of the second region and separating the further subsidiary region of the second region from the area of the second region underlying the insulated gate, the conductive path adjoining the further subsidiary region of the second region.

Claim 9

A semiconductor device according to claim 5, wherein the fifth region adjoins the first subsidiary region of the second region and the conductive path provided to the second region comprises a conductive region shorting the sixth region to the fifth region.

Claim 10

A semiconductor device according to claim 1, wherein the conductive path provided to the second region comprises a conductive electrode contacting only the second region.

Claim 11

A semiconductor power switching device comprising an IGFET and a power semiconductor switch having first and second main electrodes and a control electrode, which semiconductor device comprises a semiconductor body in which the IGFET and power semiconductor switch are formed, the semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, the first region forming at least part of a conductive path to said first main electrode of the power switch, a second region of the opposite conductivity type provided within the first region adjacent the given surface and so as to form with the first region a first pn junction meeting the given surface, and third and fourth regions of the one conductivity type provided adjacent the given surface within the second region such that the third and fourth regions each form with the second region a pn junction meeting the given surface, an insulated gate provided above the given surface for defining a conduction channel providing a gate-controlled connection between the third and fourth regions which form the source and drain regions of the IGFET, a zener diode provided between the second region and the source region of the IGFET, a conductive path provided between the second main electrode of the power switch and the second region remote from the insulated gate for reverse-biassing said zener diode so as to inhibit conduction from the second region to the first region, and a further conductive path provided between the source region of the IGFET and the control electrode of the power switch for connecting the zener diode across the second main and control electrodes of the power semiconductor switch to protect the control electrode of the power semiconductor switch.

Claim 12

A semiconductor power switching device comprising an IGFET and a power semiconductor switch having first and second main electrodes and a control electrode, which semiconductor device comprises a semiconductor body in which the IGFET and power semiconductor switch are formed, the semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, the first region forming at least part of a conductive path to said first main electrode of the power switch, a second region of the opposite conductivity type provided within the first region adjacent the given surface and so as to form with the first region a first pn junction meeting the given surface, and third and fourth regions of the one conductivity type provided adjacent the given surface within the second region such that the third and fourth regions each form with the second region a pn junction meeting the given surface, an insulated gate provided above the given surface for defining a conduction channel providing a gate-controlled connection between the third and fourth regions which form the source and drain regions of the IGFET, a zener diode provided between the second region and the source region of the IGFET, a conductive path provided between the second main electrode of the power switch and the second region remote from the insulated gate for reverse-biassing said zener diode so as to inhibit conduction from the second region to the first region, and a further conductive path provided between the source region of the IGFET and the control electrode of the power switch for connecting the zener diode across the second main and control electrodes of the power semiconductor switch to protect the control electrode of the power semiconductor switch.

Claim 13

A semiconductor power switching device comprising an IGFET and a power semiconductor switch, which semiconductor device comprises a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor, the IGFET comprising a second region of the opposite conductivity type provided within the first region adjacent the given surface and forming with the first region a first pn junction meeting the given surface, and third and fourth regions of the one conductivity type provided adjacent the given surface within the second region such that the third and fourth regions each form with the second region a pn junction meeting the given surface, an insulated gate provided above the given surface for defining a conduction channel providing a gate-controlled connection between the third and fourth regions which form the source and drain regions of the IGFET, the power semiconductor switch comprising a fifth region of the opposite conductivity type adjacent the given surface within the first region, a sixth region of the one conductivity type within the fifth region forming with the fifth region a pn junction meeting a surface of the semiconductor body, and a further insulated gate provided on the given surface to define a conduction channel providing a gate-controlled connection between the sixth region and the first region which forms at least part of a conductive path to a first main electrode of the power switch, a zener diode being provided between the second region and the source region of the IGFET with a first conductive path being provided between the sixth region and the second region remote from the insulated gate for reverse-biassing said zener diode so as to inhibit conduction from the second region to the first region, and a further conductive path being provided between the source region of the IGFET and the further insulated gate for connecting the zener diode between the fifth region and the further insulated gate to protection the further insulated gate of the power semiconductor surface.

Claim 14

A semiconductor power switching device comprising an IGFET and a power semiconductor switch, which semiconductor device comprises a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor, the IGFET comprising a second region of the opposite conductivity type provided within the first region adjacent the given surface and forming with the first region a first pn junction meeting the given surface, and third and fourth regions of the one conductivity type provided adjacent the given surface within the second region such that the third and fourth regions each form with the second region a pn junction meeting the given surface, an insulated gate provided above the given surface for defining a conduction channel providing a gate-controlled connection between the third and fourth regions which form the source and drain regions of the IGFET, the power semiconductor switch comprising a fifth region of the opposite conductivity type adjacent the given surface within the first region, a sixth region of the one conductivity type within the fifth region forming with the fifth region a pn junction meeting a surface of the semiconductor body, and a further insulated gate provided on the given surface to define a conduction channel providing a gate-controlled connection between the sixth region and the first region which forms at least part of a conductive path to a first main electrode of the power switch, a zener diode being provided between the second region and the source region of the IGFET with a first conductive path being provided between the sixth region and the second region remote from the insulated gate for reverse-biassing said zener diode so as to inhibit conduction from the second region to the first region, and a further conductive path being provided between the source region of the IGFET and the further insulated gate for connecting the zener diode between the fifth region and the further insulated gate to protection the further insulated gate of the power semiconductor surface.