Method for producing a semiconductor device having a LOCOS insulating film with at least two different thickness

Claim 1

A method for producing a semiconductor device in which a plurality of active regions formed on a semiconductor substrate having a surface divided into a first and second regions are electrically isolated from each other by a local-oxidized (LOCOS) insulating film formed on said substrate, comprising the steps of: forming a masking film on said substrate; growing an oxide film on said masking film; removing the portion of said oxide film positioned above said first regions; forming a resist having openings on the areas where said active regions are to be formed in said substrate, on said oxide film and masking film; patterning said oxide film and masking film by the use of said resist as a mask, so that said masking film has openings on the areas where said LOCOS insulating film is to be formed in said first region of the substrate, resulting in a thin portion of said oxide film where said LOCOS insulating film is to be formed in said second region of the substrate; forming an oxide film, after removing said resist, on the surface of said substrate in the openings where the substrate is exposed; removing a thin portion of said oxide film and further removing a portion of said masking film below said thin portion of the oxide film, and then forming openings in said masking film; and forming a relatively thin portion of said LOCOS insulating film by an oxidation process, in the second region of said substrate in said openings where the substrate is exposed, and simultaneously further growing said oxide film in the first region to form a relatively thick portion of said LOCOS insulating film.

Claim 2

A method for producing a semiconductor device in which a plurality of active regions formed on a semiconductor substrate having a surface divided into a first and second regions are electrically isolated from each other by a local-oxidized (LOCOS) insulating film formed on said substrate, comprising the steps of: forming a masking film on said substrate; growing an oxide film on said masking film; removing the portion of said oxide film positioned above said first regions; forming a resist having openings on the areas where said active regions are to be formed in said substrate, on said oxide film and masking film; patterning said oxide film and masking film by the use of said resist as a mask, so that said masking film has openings on the areas where said LOCOS insulating film is to be formed in said first region of the substrate, resulting in a thin portion of said oxide film where said LOCOS insulating film is to be formed in said second region of the substrate; forming an oxide film, after removing said resist, on the surface of said substrate in the openings where the substrate is exposed; removing a thin portion of said oxide film and further removing a portion of said masking film below said thin portion of the oxide film, and then forming openings in said masking film; and forming a relatively thin portion of said LOCOS insulating film by an oxidation process, in the second region of said substrate in said openings where the substrate is exposed, and simultaneously further growing said oxide film in the first region to form a relatively thick portion of said LOCOS insulating film.