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US5127989A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming a thin film pattern with a trapezoidal cross section

Assignee: Toshiba Corp
•
Filing: 1991-05-13
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Granted: 1992-07-07
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Expires: 2011-05-13
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Abstract

Abstract The present invention provides a method of forming a thin film pattern with a trapezoidal cross section. In this method, a resist pattern with an inverted-trapezoidal cross section is formed on a thin film. Using the resist pattern with the inverted-trapezoidal cross section as a mask, the thin film is dry-etched. A resist pattern is left with the resist pattern used as a mask. The resist pattern has a trapezoidal cross section.

Inventors

  • 👤 Hiroshi Haraguchi
  • 👤 Hitoshi Tsuji
  • 👤 Yasuto Otani
  • 👤 Kuniaki Kumamaru

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 11:16
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/26; G03F7/38; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/71; H10P50/73; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/40

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 62 words
A method of forming a thin film pattern, comprising the steps of: forming a thin film on a major surface of a substrate; forming a resist pattern, which has an inverted-trapezoidal cross section, on the thin film; and dry-etching the thin film selectively, with the resist pattern having the inverted-trapezoidal cross section employed as a mask, thereby forming a thin film pattern.
Claim 2
Independent Claim 62 words
A method of forming a thin film pattern, comprising the steps of: forming a thin film on a major surface of a substrate; forming a resist pattern, which has an inverted-trapezoidal cross section, on the thin film; and dry-etching the thin film selectively, with the resist pattern having the inverted-trapezoidal cross section employed as a mask, thereby forming a thin film pattern.
Claim 3
Dependent Claim 13 words
The method according to claim 1, wherein the dry etching is isotropic etching.
Claim 4
Dependent Claim 12 words
The method according to claim 2, wherein the isotropic etching is RIE.
Claim 5
Dependent Claim 34 words
The method according to claim 3, wherein the RIE is performed with use of a parallel-plate reactor capable of independently controlling the temperature of an upper electrode and the temperature of a lower electrode.
Claim 6
Dependent Claim 125 words
The method according to claim 1, wherein the resist pattern having an inverted-trapezoidal cross section is obtained by the steps of: forming a resist film on the thin film; exposing the resist film selectively, and forming a photo-sensitized region in the resist film, the photo-sensitized region being soluble in a developing liquid; subjecting the resist film having the photo-sensitized region to heat treatment, thereby producing a substance in the photo-sensitized region, which substance is soluble in the developing liquid; exposing the total surface of the resist film and forming another photo-sensitized region, which is soluble in the developing liquid, in those regions of the resist film which are other than the photo-sensitized region; and removing said other photo-sensitized region by use of the developing liquid.
Claim 7
Dependent Claim 58 words
The method according to claim 5, wherein the resist film formed on the thin film is a novolak-based positive resist; and the step of subjecting the resist film having the photo-sensitized region to heat treatment, thereby producing a substance in the photo-sensitized region, which substance is soluble in the developing liquid, is carried out in an ammonia atmosphere.
Claim 8
Dependent Claim 15 words
The method according to claim 5, wherein the resist film is an image reverse resist.
Claim 9
Dependent Claim 18 words
The method according to claim 1, wherein the resist film formed on the thin film contains a dye.
Claim 10
Dependent Claim 13 words
The method according to claim 8, wherein said dye is an azo dye.
Claim 11
Dependent Claim 26 words
The method according to claim 1, wherein the cross-sectional shape of the thin film pattern is determined by controlling the cross-sectional shape of the resist pattern.
Claim 12
Dependent Claim 50 words
The method according to claim 10, wherein the cross-sectional shape of the resist pattern is determined by controlling the quantity of exposure light in the step of exposing the resist film selectively, and forming a photo-sensitized region in the resist film, which photo-sensitized region is soluble in a developing liquid.
Claim 13
Dependent Claim 32 words
The method according to claim 10, wherein the cross-sectional shape of the resist pattern is determined by adding a dye to the resist film and controlling the quantity of the added dye.
Claim 14
Dependent Claim 70 words
The method according to claim 1, wherein the cross-sectional shape of the thin film pattern is determined such that the dry etching is performed by RIE, the RIE is carried out by use of a parallel-plate reactor capable of independently controlling the temperature of an upper electrode and the temperature of a lower electrode, and a temperature difference, which is caused between the upper electrode and lower electrode, is controlled.

References Cited (Backward Citations)

EP0057738A2 Cited
US4378383A Cited
DE3615519A1 Cited
US4764245A Cited
US5007984A Cited
US5007982A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-07-07 1996-01-06 1996-07-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-07-07 2000-01-06 2000-07-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-07-07 2004-01-06 2004-07-07 $7700.00 Window Closed / Lapsed

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