Patent US5126689A successfully refreshed from Google Patents.
US5126689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Direct-coupled grounded-base amplifier, semiconductor device and information processing device having the amplifier therein
Assignee: Canon Inc
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Filing: 1990-11-16
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Granted: 1992-06-30
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Expires: 2010-11-16
Abstract
Abstract A direct-coupled grounded-base amplifier comprising two or more grounded-base amplifying circuits. The same circuit used as the output stage of a first grounded-base amplifying circuit is mounted in each of second and subsequent grounded-base amplifying circuits. The base potentials of output stges of the second and subsequent grounded-base amplifying circuits are applied by the same circuit, thereby equalizing the DC potentials at both ends of an input resistor of the second and subsequent grounded-base amplifying circuits. Therefore, a capacitor outside of the IC is unnecessary.
Inventors
- 👤 Hiroyuki Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:09
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/30; G05F3/22; H; H03; H03F; H03F3/00; H03F3/34; H03F3/343
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
44 words
A direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said bias circuit has the same configuration as an output stage of said first grounded-base amplifying circuit.
Claim 2
Dependent Claim
44 words
A direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said bias circuit has the same configuration as an output stage of said first grounded-base amplifying circuit.
Claim 3
Dependent Claim
105 words
A circuit device comprising: a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising, a plurality of transistor whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected.
Claim 4
Dependent Claim
105 words
A circuit device comprising: a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising, a plurality of transistor whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected.
Claim 5
Dependent Claim
16 words
A circuit device according to claim 2, wherein said drive circuit comprises a current mirror circuit.
Claim 6
Dependent Claim
23 words
A circuit device according to claim 3, wherein said second bias circuit and said plurality of transistors comprise a second current mirror circuit.
Claim 7
Dependent Claim
19 words
A circuit device according to claim 2, wherein said second bias circuit comprises a plurality of base-collector short-circuited transistors.
Claim 8
Dependent Claim
47 words
A circuit device according to claim 2, wherein said second bias circuit includes a first base-collector short-circuited transistor, a second transistor whose collector is connected to an emitter of said first transistor and a third transistor whose base is connected to the emitter of said first transistor.
Claim 9
Dependent Claim
121 words
A semiconductor integrated circuit device comprising a circuit device comprising: a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising: a plurality of transistors whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected, wherein said circuit device is arranged on a silicon substrate.
Claim 10
Dependent Claim
121 words
A semiconductor integrated circuit device comprising a circuit device comprising: a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising: a plurality of transistors whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected, wherein said circuit device is arranged on a silicon substrate.
Claim 11
Independent Claim
147 words
An apparatus comprising: signal processing means comprising a semiconductor integrated circuit device comprising a circuit device including, a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising, a plurality of transistors whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected, wherein said circuit device is arranged on a silicon substrate; supporting means for supporting a recording medium; and a head for recording and/or reproducing information on said recording medium.
Claim 12
Independent Claim
147 words
An apparatus comprising: signal processing means comprising a semiconductor integrated circuit device comprising a circuit device including, a direct-coupled grounded-base amplifier comprising first and second grounded-base amplifying circuits and a first bias circuit for applying a bias potential to said second grounded-base amplifying circuit, wherein said first bias circuit has the same configuration as an output stage of said first grounded-bases amplifying circuit; and a constant-current circuit for supplying a constant current to drive said direct-coupled grounded-base amplifier, said constant-current circuit comprising, a plurality of transistors whose bases are commonly connected, a second bias circuit for supplying a predetermined voltage to said bases of said transistors, and a drive circuit to which emitters of said transistors are connected, wherein said circuit device is arranged on a silicon substrate; supporting means for supporting a recording medium; and a head for recording and/or reproducing information on said recording medium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-30 | 1995-12-30 | 1996-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-30 | 1999-12-30 | 2000-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-30 | 2003-12-30 | 2004-06-30 | $7700.00 | Window Closed / Lapsed |