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US5124777A
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Dielectric medium for capacitor of semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1991-01-03
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Granted: 1992-06-23
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Expires: 2011-01-03
Abstract
Abstract A dielectric medium for the capacitor of a semiconductor device is disclosed. The dielectric material is prepared by replacing Sr and Ba in (Sr, Ba)Nb 2 O 6 with La, and the replacement is carried out by adding 2 mole % or more of La 2 O 3 to (Sr,Ba)Nb 2 O 6 , thereby forming a composition (Sr x Ba 1-x ) 1- (3/2)y La y Nb 2 O 6 (0.25≦x≦0.5, 0.04≦y). According to the present invention, the dielectric medium has the characteristics that the crystal structure is not affected even over the Curie temperature, and that a high dielectric constant and a low dielectric loss coefficient are maintained.
Inventors
- 👤 Sangin Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:32
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1209; H01G4/1254; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C04; C04B; C04B35/00; C04B35/01; C04B35/495; H10B; H10B12/00; H10B12/30; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
28 words
A dielectric medium for the capacitor of semiconductor device, comprising a composition of (Sr x Ba 1-x ) 1- (3/2)y La y Nb 2 O 6 (0.25≦x≦0.5, 0.04≦y).
Claim 2
Dependent Claim
28 words
A dielectric medium for the capacitor of semiconductor device, comprising a composition of (Sr x Ba 1-x ) 1- (3/2)y La y Nb 2 O 6 (0.25≦x≦0.5, 0.04≦y).
Claim 3
Dependent Claim
33 words
A semiconductor device using a dielectric medium on the capacitor thereof, said dielectric medium comprising: a composition of (Sr x Ba 1-x ) 1- (3/2)y La y Nb 2 O 6 (0.25≦x≦0.5, 0.04≦y).
Claim 4
Dependent Claim
33 words
A semiconductor device using a dielectric medium on the capacitor thereof, said dielectric medium comprising: a composition of (Sr x Ba 1-x ) 1- (3/2)y La y Nb 2 O 6 (0.25≦x≦0.5, 0.04≦y).
Claim 5
Dependent Claim
17 words
A semiconductor device as recited in claim 2 wherein y is equal to or less than 0.12.
Claim 6
Dependent Claim
17 words
A dielectric medium as recited in claim 1 wherein y is equal to or less than 0.12.
References Cited (Backward Citations)
US4403236A
Cited
US4631633A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |