US5123975A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single crystal silicon substrate
Assignee: Ricoh Research Institute of General Electronics Co Ltd
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Filing: 1990-03-14
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Granted: 1992-06-23
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Expires: 2010-03-14
Abstract
Abstract A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second regions. Each of the first regions is formed as a strip shape and has a high density of inorganic impurities implanted thereinto. Each of the second regions is formed as a strip shape and has a low density of the impurities. The first and second regions are alternatively arranged contacting with each other so that the first regions are separated from each other.
Inventors
- 👤 Mitsugu Irinoda
- 👤 Koichi Haga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
94 words
A silicon substrate, comprising: an electrically insulating member; and a silicon film formed on said insulating member, said silicon film comprising: first strip shape regions arranged to be parallel to each other, each of said first strip shape regions having a high density of inorganic impurities implanted thereinto; and second strip shape regions alternately arranged with said first strip shape regions one by one, each of said second strip shape regions having a low density of said impurities; and grain boundaries generated in said silicon film being concentrated in said first strip shape regions.
Claim 2
Dependent Claim
94 words
A silicon substrate, comprising: an electrically insulating member; and a silicon film formed on said insulating member, said silicon film comprising: first strip shape regions arranged to be parallel to each other, each of said first strip shape regions having a high density of inorganic impurities implanted thereinto; and second strip shape regions alternately arranged with said first strip shape regions one by one, each of said second strip shape regions having a low density of said impurities; and grain boundaries generated in said silicon film being concentrated in said first strip shape regions.
Claim 3
Dependent Claim
26 words
A silicon substrate according to claim 1, wherein said impurities are composed of one of the elements of groups III to V of the periodic table.
Claim 4
Dependent Claim
40 words
A silicon substrate according to claim 1, wherein said insulating member comprises one material selected from the group consisting of quartz glass, silicon wafer, Al 2 O 3 , AlN, ZrO 2 , Si 3 N 4 , and SiC.
Claim 5
Dependent Claim
21 words
A silicon substrate according to claim 1, wherein an oxide film is interposed between said insulating member and said silicon film.
Claim 6
Dependent Claim
25 words
A silicon substrate according to claim 1, wherein each of said first regions has a width which is narrower than that of said second regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-23 | 1995-12-23 | 1996-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-23 | 1999-12-23 | 2000-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-23 | 2003-12-23 | 2004-06-23 | $7700.00 | Window Closed / Lapsed |