Patent US5122844A successfully refreshed from Google Patents.
US5122844A
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US
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Quantum well structure and semiconductor device using the same
Assignee: KDDI Corp
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Filing: 1991-05-22
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Granted: 1992-06-16
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Expires: 2011-05-22
Abstract
Abstract A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.
Inventors
- 👤 Shigeyuki Akiba
- 👤 Masashi Usami
- 👤 Yuichi Matsushima
- 👤 Kazuo Sakai
- 👤 Katsuyuki Utaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:19
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H10H20/822
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
185 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers. characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the phase shift corresponds to one-half the lattice constant of the first material.
Claim 2
Dependent Claim
185 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers. characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the phase shift corresponds to one-half the lattice constant of the first material.
Claim 3
Dependent Claim
195 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer being composed of InGaAsP layers and an AlInSb layer, and the carrier confining layers are formed by InGaAs layers.
Claim 4
Dependent Claim
195 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer being composed of InGaAsP layers and an AlInSb layer, and the carrier confining layers are formed by InGaAs layers.
Claim 5
Dependent Claim
197 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers. characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer is composed of Cu(GaAl)(SSe) 2 layers and a GaP layer, and the carrier confining layers are formed by Cu(GaAl)(SSe) 2 layers.
Claim 6
Dependent Claim
197 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers. characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer is composed of Cu(GaAl)(SSe) 2 layers and a GaP layer, and the carrier confining layers are formed by Cu(GaAl)(SSe) 2 layers.
Claim 7
Dependent Claim
195 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer is composed of a multiple quantum well structure formed by laminating pluralities of quantum well layers and carrier confining layers.
Claim 8
Dependent Claim
195 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and the quantum well layer is composed of a multiple quantum well structure formed by laminating pluralities of quantum well layers and carrier confining layers.
Claim 9
Dependent Claim
179 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and said first and second materials are semiconductors.
Claim 10
Dependent Claim
179 words
For use in devices for emitting or absorbing photons a quantum well structure, which comprises a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum well layer is sandwiched between the carrier confining layers, characterized in that the quantum well layer is composed of light emitting layers of a first material and a layer of a second material which is interposed between the light emitting layers, said second material having a lattice constant different from that of the first material, said second material having an energy gap substantially equal to that of the first material to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer effective to perform an electron transition for emission of light or absorption of light in dependence upon said energy levels, and said first and second materials are semiconductors.
Claim 11
Dependent Claim
140 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and caused by the transition of electrons across the energy levels.
Claim 12
Dependent Claim
140 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and caused by the transition of electrons across the energy levels.
Claim 13
Dependent Claim
158 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and the physical phenomenon is the emission of light corresponding to the energy gap of the quantum well layer which is caused by optical pumping across the energy levels.
Claim 14
Dependent Claim
158 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and the physical phenomenon is the emission of light corresponding to the energy gap of the quantum well layer which is caused by optical pumping across the energy levels.
Claim 15
Dependent Claim
143 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and the phase shift corresponds to one-half the lattice constant of the first material.
Claim 16
Dependent Claim
143 words
A semiconductor device, which has a quantum well structure comprising a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and in which the quantum layer is sandwiched between the carrier confining layers, characterized in that a second material of lattice constant different from that of a main first material of the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material to form energy levels in the forbidden band of the quantum well layer for utilizing a physical phenomenon which is caused by the energy levels in the forbidden band, and the phase shift corresponds to one-half the lattice constant of the first material.
Claim 17
Dependent Claim
26 words
A semiconductor device according to claim 7 or 8, characterized in that the phase shift corresponds to one-half the crystal lattice constant of the first material.
Claim 18
Dependent Claim
169 words
A light-emitting semiconductor device having a quantum well structure comprising, a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and the quantum well layer being sandwiched between the carrier confining layers, the quantum well layer comprising a light-emitting main first material and a second material of a lattice constant different from that of the main first material disposed in the quantum well layer, the second material having an energy gap substantially equal to that of the first material, thereby to provide a phase shift in the period of the crystal lattice of the main first material effective to form energy levels in the forbidden band of the quantum well layer for effecting light emission in response to optical pumping and of color characteristics dependent upon the energy levels in the forbidden band, and the phase shift corresponds to one-half the lattice constant of the first material.
Claim 19
Dependent Claim
169 words
A light-emitting semiconductor device having a quantum well structure comprising, a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confining layers of an energy gap greater than that of the quantum well layer, and the quantum well layer being sandwiched between the carrier confining layers, the quantum well layer comprising a light-emitting main first material and a second material of a lattice constant different from that of the main first material disposed in the quantum well layer, the second material having an energy gap substantially equal to that of the first material, thereby to provide a phase shift in the period of the crystal lattice of the main first material effective to form energy levels in the forbidden band of the quantum well layer for effecting light emission in response to optical pumping and of color characteristics dependent upon the energy levels in the forbidden band, and the phase shift corresponds to one-half the lattice constant of the first material.
References Cited (Backward Citations)
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