Patent US5122431A successfully refreshed from Google Patents.
US5122431A
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Thin film formation apparatus
Assignee: Fujifilm Business Innovation Corp
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Filing: 1989-09-11
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Granted: 1992-06-16
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Expires: 2009-09-11
Abstract
Abstract A hydrogenated amorphous silicon carbide material is used as the surface protecting layer for a photosensitive member of an electrophotographic apparatus. The carbon content (x) of the hydrogenated amorphous silicon carbide material, expressed by the general formula a--Si 1-x C x :H, ranges from 0.4 to 0.6, and the composition is such that the ratio of the peak TO amplitude appearing in the vicinity of 480 cm -1 to the peak TA amplitude appearing in the vicinity of 150 cm -1 , both as observed by laser Raman spectroscope measurement using an excitation laser of Ar + 488nm, is 2.0 or higher. Such material does not exhibit blurring of the image even when exposed to high humidity conditions.
Inventors
- 👤 Jun Kodama
- 👤 Shin Araki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:36
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; C23C16/22; C23C16/30; C23C16/32; C23C16/325; C23C16/448; C23C16/452; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10W95/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method for forming a dense, thin protective film of a hydrogenated amorphous material on a substrate, said material containing an ingredient to reduce surface wettability, said method comprising the steps of: (a) forming said film by generating a plasma of a starting gas suitable for forming said material within a deposition space where a substrate is positioned under vapor deposition conditions; (b) generating hydrogen radicals by decomposing a hydrogen gas; and (c) introducing a sufficient amount of said hydrogen radicals into said deposition space in the proximity of the substrate to cover the surface of the amorphous material film as it forms.
Claim 2
Independent Claim
103 words
A method for forming a dense, thin protective film of a hydrogenated amorphous material on a substrate, said material containing an ingredient to reduce surface wettability, said method comprising the steps of: (a) forming said film by generating a plasma of a starting gas suitable for forming said material within a deposition space where a substrate is positioned under vapor deposition conditions; (b) generating hydrogen radicals by decomposing a hydrogen gas; and (c) introducing a sufficient amount of said hydrogen radicals into said deposition space in the proximity of the substrate to cover the surface of the amorphous material film as it forms.
Claim 3
Dependent Claim
24 words
A thin film forming method as set forth in claim 1, wherein said hydrogen radicals are generated by subjecting hydrogen gas to microwave irradiation.
Claim 4
Dependent Claim
26 words
A thin film forming method as set forth in claim 1, wherein said hydrogen radicals are introduced into said deposition space from a plurality of directions.
Claim 5
Independent Claim
167 words
A method for forming an a--Si photosensitive member comprising the steps of: (a) placing a conductive substrate to be used for electrophotography within a reactor vessel; (b) reducing the pressure within the reactor vessel; (c) introducing a first starting gas including Si n H n gas and B n H 3n gas into the reduced pressure reactor vessel and generating a plasma from the first starting gas to form a boron doped a--Si:H photosensitive member on the substrate; (d) introducing a second starting gas including Si n H n gas and C n H 2n+2 gas into the reduced pressure reactor vessel and generating a plasma from the second starting gas to form a surface protecting layer of a--SiC:H on said a--Si:H photosensitive member; and (e) simultaneously with the introduction of the second starting gas into said vessel, introducing a sufficient amount of hydrogen radicals into the reactor vessel in the proximity of the photosensitive member to cover the surface of the protecting layer as it forms.
Claim 6
Independent Claim
167 words
A method for forming an a--Si photosensitive member comprising the steps of: (a) placing a conductive substrate to be used for electrophotography within a reactor vessel; (b) reducing the pressure within the reactor vessel; (c) introducing a first starting gas including Si n H n gas and B n H 3n gas into the reduced pressure reactor vessel and generating a plasma from the first starting gas to form a boron doped a--Si:H photosensitive member on the substrate; (d) introducing a second starting gas including Si n H n gas and C n H 2n+2 gas into the reduced pressure reactor vessel and generating a plasma from the second starting gas to form a surface protecting layer of a--SiC:H on said a--Si:H photosensitive member; and (e) simultaneously with the introduction of the second starting gas into said vessel, introducing a sufficient amount of hydrogen radicals into the reactor vessel in the proximity of the photosensitive member to cover the surface of the protecting layer as it forms.
Claim 7
Dependent Claim
85 words
A hydrogenated amorphous silicon carbide material having a composition described by the general formation a--Si 1-x C x :H wherein x is in the range from 0.4 to 0.8 and wherein the composition is such that the ratio of the peak TO amplitude appearing in the vicinity of 480 cm -1 to the peak TA amplitude appearing in the vicinity of 150 cm -1 , both observed by laser Raman spectroscopy measurement using an excitation laser of Ar + 488 nm, is 2.0 or higher.
Claim 8
Dependent Claim
85 words
A hydrogenated amorphous silicon carbide material having a composition described by the general formation a--Si 1-x C x :H wherein x is in the range from 0.4 to 0.8 and wherein the composition is such that the ratio of the peak TO amplitude appearing in the vicinity of 480 cm -1 to the peak TA amplitude appearing in the vicinity of 150 cm -1 , both observed by laser Raman spectroscopy measurement using an excitation laser of Ar + 488 nm, is 2.0 or higher.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-06-16 | 1995-12-16 | 1996-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-16 | 1999-12-16 | 2000-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-16 | 2003-12-16 | 2004-06-16 | $7700.00 | Window Closed / Lapsed |