Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages

Claim 2

A monolithic semiconductor IC device comprising bipolar transistor complementary MOS transistor gate (Bi-CMOS gate) blocks and emitter-coupled logic gate (ECL gate) blocks formed in a single semiconductor substrate, said Bi-CMOS gate blocks including bipolar transistors and MOS transistors formed in said single semiconductor substrate, said ECL gate blocks including other bipolar transistors formed in said single semiconductor substrate, wherein the bipolar transistors in said Bi-CMOS gate blocks are formed to have a predetermined breakdown voltage substantially equal to that of the MOS transistors in said Bi-CMOS gate blocks and the bipolar transistors in said ECL gate blocks are formed to have a predetermined breakdown voltage lower than that of the bipolar transistors in said Bi-CMOS gate blocks.

Claim 3

A monolithic semiconductor IC device comprising a plurality of blocks having different functions and formed in a single semiconductor substrate, at least two of said blocks including bipolar transistors each having an emitter region, a base region and a collector region formed in said single substrate, at least one of said at least two blocks including insulated-gate field-effect transistors each having a source region, a drain region and a channel region therebetween formed in said single substrate, wherein the collector region of at least one of the bipolar transistors in at least one of said blocks is formed to have a predetermined resistance value which is different from a predetermined resistance value of a collector region of a bipolar transistor in another block.

Claim 4

A monolithic semiconductor IC device comprising a plurality of blocks having different functions and formed in a single semiconductor substrate, at least two of said blocks including bipolar transistors each having an emitter region, a base region and a collector region formed in said single substrate, at least one of said at least two blocks including insulated-gate field-effect transistors each having a source region, a drain region and a channel region therebetween formed in said single substrate, wherein the collector region of at least one of the bipolar transistors in at least one of said blocks is formed to have a predetermined resistance value which is different from a predetermined resistance value of a collector region of a bipolar transistor in another block.

Claim 5

A monolithic semiconductor IC device comprising: first and second circuit blocks having different functions from one another, said first and second circuit blocks being formed in a single semiconductor substrate; a first bipolar transistor formed in said first circuit block, said first bipolar transistor having an emitter region, a base region and a collector region, wherein the collector region of said first bipolar transistor is formed to have a predetermined first electrical resistance value; and a second bipolar transistor formed in said second circuit block, said second bipolar transistor having an emitter region, a base region and a collector region, wherein the collector region of said second bipolar transistor is formed to have a predetermined second electrical resistance value, wherein at least one of said first and second circuit blocks includes an insulated-gate field effect transistor having a source region, a drain region and a channel region formed in said single semiconductor substrate, and wherein said predetermined first and second electrical resistance values are different from one another so that said first and second bipolar transistors in said first and second circuit blocks will have different operation speeds and different breakdown voltages from one another.

Claim 6

A monolithic semiconductor IC device comprising: first and second circuit blocks having different functions from one another, said first and second circuit blocks being formed in a single semiconductor substrate; a first bipolar transistor formed in said first circuit block, said first bipolar transistor having an emitter region, a base region and a collector region, wherein the collector region of said first bipolar transistor is formed to have a predetermined first electrical resistance value; and a second bipolar transistor formed in said second circuit block, said second bipolar transistor having an emitter region, a base region and a collector region, wherein the collector region of said second bipolar transistor is formed to have a predetermined second electrical resistance value, wherein at least one of said first and second circuit blocks includes an insulated-gate field effect transistor having a source region, a drain region and a channel region formed in said single semiconductor substrate, and wherein said predetermined first and second electrical resistance values are different from one another so that said first and second bipolar transistors in said first and second circuit blocks will have different operation speeds and different breakdown voltages from one another.

Claim 7

A monolithic semiconductor IC device according to claim 3, wherein the collector region of said first bipolar transistor has a width measured in a direction of movement of carriers in said first bipolar transistor contributing to conduction of the first bipolar transistor which is different from the width measured in a direction of movement of carriers in said second bipolar transistor in said second circuit block to provide the different first and second electrical resistance values of the collector regions of the first and second bipolar transistors in the first and second circuit blocks.

Claim 8

A monolithic semiconductor IC device according to claim 3, wherein the collector region of said first bipolar transistor has an impurity concentration different form the impurity concentration of the collector region of said second bipolar transistor to provide the first and second electrical resistance values of the collector regions of the first and second bipolar transistors in the first and second circuit blocks.

Claim 9

A monolithic semiconductor IC device according to claim 3, wherein the predetermined first electrical resistance value is smaller than the predetermined second electrical resistance value to provide said first circuit block with a higher operation speed and a lower breakdown voltage than said second block in said single semiconductor substrate.

Claim 10

A monolithic semiconductor IC device according to claim 6, wherein said first bipolar transistor in said first circuit block is arranged to operate on predetermined signals having a first amplitude level and said second bipolar transistor in said second block is arranged to operate on predetermined signals having a second amplitude level, wherein said second amplitude level is larger than said first amplitude level.

Claim 11

A monolithic semiconductor IC device according to claim 3, wherein the collector region of said bipolar transistor in said second circuit block has a conductivity type identical with and an impurity concentration higher than those of the channel region of said insulated-gate field-effect transistor.

Claim 12

A monolithic semiconductor IC device according to claim 3, wherein said second circuit block includes a memory cell array block, while said first circuit block includes first peripheral circuit blocks directly coupled to said memory array block and second peripheral circuit blocks coupled to said first peripheral circuit blocks.

Claim 13

A semiconductor device comprising a plurality of bipolar transistors and a plurality of MOS transistors, both formed in a single semiconductor substrate, said plurality of bipolar transistors having different breakdown voltages from one another, wherein predetermined ones of said bipolar transistors which comprise a direct peripheral circuit block to be directly connected to a memory cell array block are formed to have a different predetermined breakdown voltage from predetermined breakdown voltages of predetermined ones of said bipolar transistors which comprise an indirect peripheral circuit block which is not directly connected to said memory cell array block.

Claim 14

A semiconductor device comprising a plurality of bipolar transistors and a plurality of MOS transistors, both formed in a single semiconductor substrate, said plurality of bipolar transistors having different breakdown voltages from one another, wherein predetermined ones of said bipolar transistors which comprise a direct peripheral circuit block to be directly connected to a memory cell array block are formed to have a different predetermined breakdown voltage from predetermined breakdown voltages of predetermined ones of said bipolar transistors which comprise an indirect peripheral circuit block which is not directly connected to said memory cell array block.

Claim 15

A semiconductor device according to claim 10, wherein the semiconductor device comprises a Bi-CMOS DRAM.

Claim 16

A semiconductor device comprising a plurality of bipolar transistors and a plurality of MOS transistors, both formed in a single semiconductor substrate, said plurality of bipolar transistors having different breakdown voltages and constituting different blocks having different functions from one another, wherein said single semiconductor substrate has embedded doped regions of varied levels measured from the substrate surface for the bipolar transistors, and wherein collector regions of the bipolar transistors are formed on said embedded regions to have different widths to provide said bipolar transistors with different predetermined breakdown voltages from one another, said embedded regions having an impurity concentration higher than those of said collector regions.

Claim 17

A semiconductor device comprising a plurality of bipolar transistors and a plurality of MOS transistors, both formed in a single semiconductor substrate, said plurality of bipolar transistors having different breakdown voltages and constituting different blocks having different functions from one another, wherein said single semiconductor substrate has embedded doped regions of varied levels measured from the substrate surface for the bipolar transistors, and wherein collector regions of the bipolar transistors are formed on said embedded regions to have different widths to provide said bipolar transistors with different predetermined breakdown voltages from one another, said embedded regions having an impurity concentration higher than those of said collector regions.

Claim 18

A Bi-CMOS monolithic semiconductor IC device comprising a memory cell array block, first peripheral circuit blocks including a word line driver circuit block and a sense amplifier block both directly coupled to said memory cell array block and second peripheral circuit blocks including a decoder block coupled to said word line driver circuit block, an input circuit block coupled to said decoder block and an output circuit block coupled to said sense amplifier block, said memory cell array block and said first and second peripheral circuit blocks being formed in a single semiconductor substrate, wherein: at least said word line driver circuit block and said decoder block among said blocks include bipolar transistors each having an emitter region, a base region and a collector region formed in said single substrate, and at least one of said word line driver circuit block and said decoder block including insulated-gate field-effect transistors each having a source region, a drain region and a channel region therebetween formed in said single substrate; and the collector region of at least one of the bipolar transistors in said decoder block is formed to have a predetermined resistance value smaller than a predetermined resistance value of a collector region of a bipolar transistor in said word line driver circuit block directly coupled to said memory cell array block to provide said word line driver circuit block with a first breakdown voltage and to provide said decoder block with a second breakdown voltage lower than said first breakdown voltage.

Claim 19

A Bi-CMOS monolithic semiconductor IC device comprising a memory cell array block, first peripheral circuit blocks including a word line driver circuit block and a sense amplifier block both directly coupled to said memory cell array block and second peripheral circuit blocks including a decoder block coupled to said word line driver circuit block, an input circuit block coupled to said decoder block and an output circuit block coupled to said sense amplifier block, said memory cell array block and said first and second peripheral circuit blocks being formed in a single semiconductor substrate, wherein: at least said word line driver circuit block and said decoder block among said blocks include bipolar transistors each having an emitter region, a base region and a collector region formed in said single substrate, and at least one of said word line driver circuit block and said decoder block including insulated-gate field-effect transistors each having a source region, a drain region and a channel region therebetween formed in said single substrate; and the collector region of at least one of the bipolar transistors in said decoder block is formed to have a predetermined resistance value smaller than a predetermined resistance value of a collector region of a bipolar transistor in said word line driver circuit block directly coupled to said memory cell array block to provide said word line driver circuit block with a first breakdown voltage and to provide said decoder block with a second breakdown voltage lower than said first breakdown voltage.