Patent US5119265A successfully refreshed from Google Patents.
US5119265A
Expired / Lapsed
US
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Semiconductor device protection circuit
Assignee: Motorola Solutions Inc
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Filing: 1990-04-02
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Granted: 1992-06-02
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Expires: 2010-04-02
Abstract
Abstract FET protection circuit (10; 100) senses the temperature of a FET (11) and, via a control circuit (24), increases FET conduction in response to sensed FET temperature exceeding a high temperature threshold (160° C.) close to the maximum rated junction temperature (175° C.) of the FET. This allows the FET to survive excessive drain-to-source voltages which occur during load dump conditions even when load dump is sensed by a zener diode (26) which initially turns on the FET. During load dump after a zener diode (26) turns on the FET, in response to sensing excessive FET temperature the FET is turned in harder so as to reduce the drain-to-source voltage (V DS ) and minimize power dissipation during load dump thereby protecting the FET. Normal overcurrent and maximum temperture turn off circuitry (44, 33, 60-63) is effectively overridden by high temperature threshold turn-on circuitry (50). Preferably, a majority of the control circuit (24) is provided on an integrated circuit, but an external resistor (31) allows effective adjustment of two temperature thresholds (150° C., 160° C.) above which control signals provided to the FET will be modified.
Inventors
- 👤 John R. Qualich
- 👤 Stephen P. Robb
- 👤 John M. Pigott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:52
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0822; H03K17/16; H03K17/161; H03K17/165; H03K2017/0806; H03K2217/00; H03K2217/0036; Y; Y10; Y10S; Y10S323/00; Y10S323/907
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
141 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including means for protecting said device by increasing on conduction of said device in response to said temperature sense signal indicating the temperature of the device exceeds a first high temperature threshold close to the maximum rated junction temperature of said device.
Claim 2
Dependent Claim
141 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including means for protecting said device by increasing on conduction of said device in response to said temperature sense signal indicating the temperature of the device exceeds a first high temperature threshold close to the maximum rated junction temperature of said device.
Claim 3
Dependent Claim
48 words
A semiconductor device protection circuit according to claim 1 wherein said protecting means includes means for decreasing power dissipation of said device during load dump by increasing on conduction of said device during load dump in response to said sensed device temperature exceeding said first high temperature threshold.
Claim 4
Dependent Claim
53 words
A semiconductor device protection circuit according to claim 2 wherein said protecting means includes load dump means for initially detecting load dump and turning said device on in response thereto, said decreasing power dissipation means being operative to reduce device power dissipation at least after said load dump means turns said device on.
Claim 5
Dependent Claim
35 words
A semiconductor device protection circuit according to claim 3 wherein said load dump means includes a zener diode connected between one of said output electrodes of said device and said control electrode of said device.
Claim 6
Dependent Claim
38 words
A semiconductor device protection circuit according to claim 1 wherein said device first high temperature threshold which is close to the maximum rated junction temperature is above 30° C. below the maximum rated junction temperature of said device.
Claim 7
Dependent Claim
68 words
A semiconductor device protection circuit according to claim 1 wherein said control means includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold which is lower than said first high temperature threshold, said control means turning said device on if the temperature of said device exceeds both of said second and first high temperature thresholds.
Claim 8
Dependent Claim
66 words
A semiconductor device protection circuit according to claim 1 wherein said protecting means includes load dump means for initially detecting load dump and turning said device on in response thereto, said protecting means being operative to reduce power dissipation of said device produced during operation of said load dump means during load dump in response to said sensed device temperature exceeding said first high temperature threshold.
Claim 9
Dependent Claim
145 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including load dump means for sensing a load dump condition and turning said device on in response thereto and additional means for determining said control signal such that said device is on in response to said sensed device temperature exceeding a first predetermined high temperature threshold.
Claim 10
Dependent Claim
145 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including load dump means for sensing a load dump condition and turning said device on in response thereto and additional means for determining said control signal such that said device is on in response to said sensed device temperature exceeding a first predetermined high temperature threshold.
Claim 11
Dependent Claim
72 words
A semiconductor device protection circuit according to claim 8 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold which is lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both of said second and first high temperature thresholds.
Claim 12
Dependent Claim
47 words
A semiconductor device protection circuit according to claim 9 wherein said control means off means includes means which receives said external control signal, but prevents said external control signal from determining said device control signal whenever the temperature of said device exceeds said second high temperature threshold.
Claim 13
Dependent Claim
48 words
A semiconductor device protection circuit according to claim 10 wherein said control means prevention means comprises logic circuitry which receives as inputs both said external control signal and the output signal of a comparator which output is indicative of said device temperature exceeding said second high temperature threshold.
Claim 14
Dependent Claim
35 words
A semiconductor device protection circuit according to claim 8 wherein said load dump means comprises a zener diode connected between one of said output electrodes of said device and said control electrode of said device.
Claim 15
Dependent Claim
153 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including load dump means for sensing the occurrence of load dump and turning said device on in response thereto and means for turning said device on harder, thus decreasing power dissipation in said device, during load dump and in response to the sensed temperature of said device exceeding a first predetermined high temperature threshold.
Claim 16
Dependent Claim
153 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; wherein the improvement comprises said control means including load dump means for sensing the occurrence of load dump and turning said device on in response thereto and means for turning said device on harder, thus decreasing power dissipation in said device, during load dump and in response to the sensed temperature of said device exceeding a first predetermined high temperature threshold.
Claim 17
Dependent Claim
35 words
A semiconductor device protection circuit according to claim 13 wherein said load dump means comprises a zener diode connected between one of said output electrodes of said device and said control electrode of said device.
Claim 18
Dependent Claim
30 words
A semiconductor device protection circuit according to claim 14 wherein said turn on harder means reduces the voltage across said output electrodes during load dump to reduce device power dissipation.
Claim 19
Dependent Claim
46 words
A semiconductor device protection circuit according to claim 15 wherein said turn-on harder means includes charge pump means for providing a substantial voltage potential at the control electrode of said device in response to the sensed temperature of said device exceeding said first high temperature threshold.
Claim 20
Dependent Claim
68 words
A semiconductor device protection circuit according to claim 16 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both second and first high temperature thresholds.
Claim 21
Dependent Claim
68 words
A semiconductor device protection circuit according to claim 13 wherein said control means also includes off means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on during load dump if the temperature of said device exceeds both second and first high temperature thresholds.
Claim 22
Dependent Claim
183 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; means for sensing said current passing through said semiconductor device and providing a current sense electrical signal having a magnitude indicative thereof; and said control means including means for turning said device off by modifying said device control signal in response to said current through said device exceeding a maximum overcurrent limit; wherein the improvement comprises said control means including means for turning said device on in response to the temperature of said device exceeding a first predetermined high temperature threshold despite the current through said device exceeding said maximum overcurrent limit.
Claim 23
Dependent Claim
183 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; control means coupled to said temperature sense means for receiving said temperature sense signal and an external control signal and selectively determining said device control signal in accordance therewith; means for sensing said current passing through said semiconductor device and providing a current sense electrical signal having a magnitude indicative thereof; and said control means including means for turning said device off by modifying said device control signal in response to said current through said device exceeding a maximum overcurrent limit; wherein the improvement comprises said control means including means for turning said device on in response to the temperature of said device exceeding a first predetermined high temperature threshold despite the current through said device exceeding said maximum overcurrent limit.
Claim 24
Dependent Claim
70 words
A semiconductor device protection circuit according to claim 19 wherein said means for turning said device off also includes means for turning said device off in response to the temperature of said device exceeding a second predetermined high temperature threshold lower than said first high temperature threshold, said control means turning said device on if the temperature of said device exceeds both of said second and first high temperature thresholds.
Claim 25
Dependent Claim
60 words
A semiconductor device protection circuit according to claim 20 wherein said control means off means includes means which receives said external control signal, but prevents said external control signal from determining said device control signal whenever the temperature of said device exceeds said second high temperature threshold value and whenever the current through said device exceeds said maximum overcurrent limit.
Claim 26
Dependent Claim
64 words
A semiconductor device protection circuit according to claim 21 wherein said control means prevention means comprises logic circuitry which receives as inputs said external control signal, the output of a comparator which is indicative of said device temperature exceeding said second high temperature threshold and the output of a comparator which is indicative of said current through said device exceeding said maximum overcurrent limit.
Claim 27
Dependent Claim
144 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal which controls said device through current.
Claim 28
Dependent Claim
144 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal which controls said device through current.
Claim 29
Dependent Claim
40 words
A semiconductor device protection circuit according to claim 23 wherein said temperature sense means includes a temperature sensing diode positioned adjacent said semiconductor device and wherein said external adjustment means comprises at least one resistor external to said integrated circuit.
Claim 30
Dependent Claim
36 words
A semiconductor device protection circuit according to claim 24 wherein said external resistor is connected in series with said temperature sensing diode and said external resistor has a magnitude which determines said temperature sense signal magnitude.
Claim 31
Dependent Claim
15 words
A semiconductor device protection circuit according to claim 24 wherein said external resistor is adjustable.
Claim 32
Dependent Claim
160 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means increases on conduction of said device in response to the temperature of said device exceeding said threshold.
Claim 33
Dependent Claim
160 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means increases on conduction of said device in response to the temperature of said device exceeding said threshold.
Claim 34
Dependent Claim
158 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means turns said device off in response to the temperature of said device exceeding said threshold.
Claim 35
Dependent Claim
158 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means turns said device off in response to the temperature of said device exceeding said threshold.
Claim 36
Dependent Claim
204 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means utilizes said temperature sense signal magnitude to increase on conduction of said device in response to the temperature of said device exceeding a first temperature threshold and to turn said device off in response to the temperature of said device exceeding a second temperature threshold, lower than said first temperature threshold, said external adjustment means determining said temperature sense signal magnitude.
Claim 37
Dependent Claim
204 words
A semiconductor device protection circuit comprising: semiconductor device for receiving at least one device control signal at a control electrode and, in response thereto, selectively passing current through the device between a pair of output electrodes of the device; temperature sense means coupled to said device for developing a temperature sense signal having a magnitude indicative of the temperature of said device; and control means coupled to said temperature sense means for receiving said temperature sense signal and selectively modifying said device control signal in response to said sensed device temperature exceeding a temperature threshold; wherein the improvement comprises a majority of said control means being provided on a control integrated circuit and means, external to said integrated circuit, for allowing external adjustment of the device temperature at which said control means will modify said device control signal, and wherein said control means utilizes said temperature sense signal magnitude to increase on conduction of said device in response to the temperature of said device exceeding a first temperature threshold and to turn said device off in response to the temperature of said device exceeding a second temperature threshold, lower than said first temperature threshold, said external adjustment means determining said temperature sense signal magnitude.
Claim 38
Dependent Claim
40 words
A semiconductor device protection circuit according to claim 29 wherein said first and second temperature thresholds are both determined by voltages derived from a resistor divider circuit on said integrated circuit such that said thresholds have a known relationship therebetween.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-06-02 | 1995-12-02 | 1996-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-02 | 1999-12-02 | 2000-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-02 | 2003-12-02 | 2004-06-02 | $7700.00 | Window Closed / Lapsed |