Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
109 words
An infrared ray sensor comprising: a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to said first surface; an infrared ray reflecting film provided on said first surface of said sensor substrate; an infrared ray detecting element provided on said second surface of said sensor substrate; an infrared ray transmitting window portion formed in said infrared ray reflecting film in relation to said infrared ray detecting element, whereby an infrared ray which enters said infrared ray transmitting window portion passes through said sensor substrate and is then incident on said infrared ray detecting element.
Claim 2
Dependent Claim
109 words
An infrared ray sensor comprising: a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to said first surface; an infrared ray reflecting film provided on said first surface of said sensor substrate; an infrared ray detecting element provided on said second surface of said sensor substrate; an infrared ray transmitting window portion formed in said infrared ray reflecting film in relation to said infrared ray detecting element, whereby an infrared ray which enters said infrared ray transmitting window portion passes through said sensor substrate and is then incident on said infrared ray detecting element.
Claim 3
Dependent Claim
65 words
An infrared ray sensor according to claim 1, wherein two or more infrared ray detecting elements are provided on said second surface or said sensor substrate, and wherein said infrared ray transmitting window portion is formed at a position in said infrared ray reflecting film to allow the infrared ray to enter a specified one of said two or more infrared ray detecting elements .
Claim 4
Dependent Claim
40 words
An infrared ray sensor according to claim 2, further comprising a plurality of bridges formed on said second surface of said sensor substrate, said infrared ray detecting elements being respectively provided on said plurality of bridges, one on each bridge.
Claim 5
Dependent Claim
37 words
An infrared ray sensor according to either of claims 2 or 3, further comprising electrode pads formed on said second surface of said sensor substrate, said electrode pads being electrically connected to said infrared ray detecting elements.
Claim 6
Dependent Claim
62 words
An infrared ray sensor according to claim 4, further comprising a terminal substrate having conductive layers at positions corresponding to said electrode pads on said sensor substrate and electrode terminals respectively connected to said conductive layers, said sensor substrate being fixed to said terminal substrate in a state wherein said electrode pads are joined to said conductive layers of said terminal substrate.
Claim 7
Dependent Claim
44 words
An infrared ray sensor according to claim 5, wherein a surface of said terminal substrate to which said sensor substrate is joined has a hole portion, the surrounding of said hole portion being sealed when said sensor substrate is joined to said terminal substrate.
Claim 8
Dependent Claim
18 words
An infrared ray sensor according to claim 6, wherein said infrared ray reflecting film comprises a metal film.
Claim 9
Dependent Claim
16 words
An infrared ray sensor according to claims 7, wherein said infrared ray transmitting material comprises silicon.
Claim 10
Dependent Claim
16 words
An infrared ray sensor according to claim 8, wherein said infrared ray transmitting material comprises germanium.
Claim 11
Dependent Claim
16 words
An infrared sensor according to claim 9, wherein said bridges are made of silicon oxynitride film.
Claim 12
Dependent Claim
22 words
An infrared ray sensor according to claim 10, wherein said silicon oxynitride film has a thickness ranging from 0.1 to 50 μm.
Claim 13
Dependent Claim
34 words
An infrared ray sensor according to claim 1, further comprising an electrode pad formed on said second surface of said sensor substate, said electrode pad being electrically connected to said infrared ray detecting element.
Claim 14
Dependent Claim
39 words
An infrared ray sensor comprising: a sensor substrate formed of a semiconductor material; a bridge formed of a silicon oxynitride film, said bridge being provided on said sensor substrate; and an infrared ray detecting element provided on said bridge.
Claim 15
Dependent Claim
39 words
An infrared ray sensor comprising: a sensor substrate formed of a semiconductor material; a bridge formed of a silicon oxynitride film, said bridge being provided on said sensor substrate; and an infrared ray detecting element provided on said bridge.
Claim 16
Independent Claim
66 words
A method of manufacturing an infrared ray sensor, comprising the steps of; forming a silicon oxynitride film by causing a reactive gas to flow on a semiconductor substrate; patterning said silicon oxynitride film; and forming a hole portion by selectively removing a portion of said semiconductor substrate located below said patterned silicon oxynitride film so as to form a bridge made of the silicon oxynitride film.
Claim 17
Independent Claim
66 words
A method of manufacturing an infrared ray sensor, comprising the steps of; forming a silicon oxynitride film by causing a reactive gas to flow on a semiconductor substrate; patterning said silicon oxynitride film; and forming a hole portion by selectively removing a portion of said semiconductor substrate located below said patterned silicon oxynitride film so as to form a bridge made of the silicon oxynitride film.
Claim 18
Dependent Claim
45 words
A method of manufacturing an infrared ray sensor according to claim 14, wherein a composition of said silicon oxynitride film is changed in accordance with a coefficient of thermal expansion of said semiconductor substrate by changing a gas flow rate ratio of said reactive gas.