Monolithic photoconductive detector array

Claim 2

An electromagnetic radiation detector system of the photoconductive detector type comprising: a body of semiconductor material having a plurality of spaced photoconductive regions of first conductivity type and having a second region of second conductivity type surrounding the plurality of spaced photoconductive regions and separating, at least at one end, each of the plurality from the others of the plurality, wherein the photoconductive regions have thicknesses of the same order of magnitude as the diffusion length of minority carriers in the photoconductive regions, and wherein the photoconductive regions and the second region define junctions which tend to cause separation of minority carriers from majority carriers in the photoconductive regions, thereby enhancing photosignals produced in the photoconductive regions; electrical bias means for applying an electrical bias between two positions of one of the photoconductive regions for a period greater than the carrier lifetime in the photoconductive region; and sensing means for sensing the photosignal produced in one of the photoconductive regions in response to incident radiation.

Claim 3

An electromagnetic radiation detector system of the photoconductive detector type comprising: a body of semiconductor material of second conductivity type, the body having a first surface and a second surface; a plurality of photoconductive regions of first conductivity type formed in the semiconductor body, each of the photoconductive regions being exposed at the first surface and each of the photoconductive regions being electrically isolated at least at one end from other photoconductive regions by material of second conductivity type; first electrode means connected to each of the photoconductive regions at one end of the photoconductive regions; second electrode means connected to the opposite end of each of the photoconductive regions; electrical bias means for applying an electrical bias between the first electrode means and the second electrode means for a period greater than the carrier lifetime in the photoconductive region; and sensing means connected to the first and second electrode means for sensing the change in resistivity of the photoconductive regions in response to incident radiation.

Claim 4

An electromagnetic radiation detector system of the photoconductive detector type comprising: a body of semiconductor material of second conductivity type, the body having a first surface and a second surface; a plurality of photoconductive regions of first conductivity type formed in the semiconductor body, each of the photoconductive regions being exposed at the first surface and each of the photoconductive regions being electrically isolated at least at one end from other photoconductive regions by material of second conductivity type; first electrode means connected to each of the photoconductive regions at one end of the photoconductive regions; second electrode means connected to the opposite end of each of the photoconductive regions; electrical bias means for applying an electrical bias between the first electrode means and the second electrode means for a period greater than the carrier lifetime in the photoconductive region; and sensing means connected to the first and second electrode means for sensing the change in resistivity of the photoconductive regions in response to incident radiation.

Claim 5

The system of claim 2 wherein an insulator layer substantially covers those portions of the first surface having the second conductivity type.

Claim 6

The system of claim 3 wherein the first and the second electrode means comprise metal strips deposited over the insulator layer and onto the first surface of the photoconductive region.

Claim 7

The system of claim 4 and further comprising an antireflection coating substantially covering the photoconductive region and the first and second electrode means.

Claim 8

The system of claim 2 wherein the first electrode means comprises: a cavity extending through at least a portion of the body from the second surface toward a photoconductive region; a highly doped region of first conductivity type surrounding the cavity and contacting the photoconductive region at one end of the photoconductive region; and contact means making electrical contact proximate to the second surface with the highly doped region of first conductivity type.

Claim 9

The system of claim 6 wherein the second electrode means comprises: a cavity extending through at least a portion of the body from the second surface toward a photoconductive region; a highly doped region of first conductivity type surrounding the cavity and contacting the photoconductive region at an opposite end of the photoconductive region; and contact means making electrical proximate to the second surface with the highly doped region of first conductivity type.

Claim 10

A photoconductive detector system comprising: a body of semiconductor material having a photoconductive first region of first conductivity type and a second region of second conductivity type, wherein the photoconductive first region and the second region define a junction having a field associated therewith which tends to separate minority carriers from majority carriers in the photoconductive first region, thereby enhancing a photosignal produced in the photoconductive first region; electrical bias means for applying an electrical bias between first and second positions on the photoconductive first region for a period greater than the carrier lifetime in the photoconductive first region; means for sensing the photosignal produced in the photoconductive first region and wherein the photoconductive first region is exposed at a first surface and wherein the junction is substantially parallel to the first surface along substantially the entire length of between the first and second positions.

Claim 11

A photoconductive detector system comprising: a body of semiconductor material having a photoconductive first region of first conductivity type and a second region of second conductivity type, wherein the photoconductive first region and the second region define a junction having a field associated therewith which tends to separate minority carriers from majority carriers in the photoconductive first region, thereby enhancing a photosignal produced in the photoconductive first region; electrical bias means for applying an electrical bias between first and second positions on the photoconductive first region for a period greater than the carrier lifetime in the photoconductive first region; means for sensing the photosignal produced in the photoconductive first region and wherein the photoconductive first region is exposed at a first surface and wherein the junction is substantially parallel to the first surface along substantially the entire length of between the first and second positions.

Claim 12

A mercury cadmium telluride photoconductive detector comprising: a body of mercury cadmium telluride; a thin layer of n-type conductivity in the body and exposed at a surface of the body; a p-type region in the body; a junction defined by the thin layer and the p-type region, the junction having a field associated therewith which enhances a photoconductive photosignal produced in the thin layer in response to incident radiation; and first and second electrode means connected to first and second positions, respectively, on the thin layer for deriving the photoconductive photosignal from the thin layer.

Claim 13

A mercury cadmium telluride photoconductive detector comprising: a body of mercury cadmium telluride; a thin layer of n-type conductivity in the body and exposed at a surface of the body; a p-type region in the body; a junction defined by the thin layer and the p-type region, the junction having a field associated therewith which enhances a photoconductive photosignal produced in the thin layer in response to incident radiation; and first and second electrode means connected to first and second positions, respectively, on the thin layer for deriving the photoconductive photosignal from the thin layer.

Claim 14

A mercury cadmium telluride photoconductive detector system as defined in claim 9 wherein the thin layer has a thickness of the same order of magnitude as the diffusion length of minority carriers in the thin layer.

Claim 15

A mercury cadmium telluride photoconductive detector system as defined in claim 9 wherein the junction is substantially parallel to the surface along substantially the entire length of between the first and second positions.

Claim 16

A photodetector comprising: a photoconductive detector comprising: a thin region of first conductivity type mercury cadmium telluride for producing a photoconductive photosignal in response to incident radiation; and first and second electrode means connected to first and second positions, respectively, on the thin region for deriving the photoconductive photosignal from the thin region; means for enhancing the photoconductive photosignal, the means comprising: a region of second conductivity type mercury cadmium telluride proximate the thin region; and a junction having a field associated therewith which tends to separate minority carriers from majority carriers in the thin region.

Claim 17

A photodetector comprising: a photoconductive detector comprising: a thin region of first conductivity type mercury cadmium telluride for producing a photoconductive photosignal in response to incident radiation; and first and second electrode means connected to first and second positions, respectively, on the thin region for deriving the photoconductive photosignal from the thin region; means for enhancing the photoconductive photosignal, the means comprising: a region of second conductivity type mercury cadmium telluride proximate the thin region; and a junction having a field associated therewith which tends to separate minority carriers from majority carriers in the thin region.

Claim 18

A photoconductive detector system comprising: a body of semiconductor material having a photoconductive first region of first conductivity type and a second region of second conductivity type; electrical bias means for applying an electrical bias between first and second positions on the photoconductive first region for a period greater than the carrier lifetime in the photoconductive first region; electrode means connected to the first and second positions; sensing means connected to the electrode means for sensing the change in resistivity of the photoconductive first region in response to incident radiation; wherein the conductive first region has a thickness of the same order of magnitude as the diffusion length of minority carriers in the photoconductive first region and wherein the photoconductive first region and the second region define a junction, the junction having a field associated therewith which tends to separate minority carriers from majority carriers in the photoconductive first region; and wherein the photoconductive first region is exposed at a first surface and wherein the junction is substantially parallel to the first surface along substantially the entire length of between the first and second positions.

Claim 19

A photoconductive detector system comprising: a body of semiconductor material having a photoconductive first region of first conductivity type and a second region of second conductivity type; electrical bias means for applying an electrical bias between first and second positions on the photoconductive first region for a period greater than the carrier lifetime in the photoconductive first region; electrode means connected to the first and second positions; sensing means connected to the electrode means for sensing the change in resistivity of the photoconductive first region in response to incident radiation; wherein the conductive first region has a thickness of the same order of magnitude as the diffusion length of minority carriers in the photoconductive first region and wherein the photoconductive first region and the second region define a junction, the junction having a field associated therewith which tends to separate minority carriers from majority carriers in the photoconductive first region; and wherein the photoconductive first region is exposed at a first surface and wherein the junction is substantially parallel to the first surface along substantially the entire length of between the first and second positions.