EP0214289B1
Expired / Lapsed
EP
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Integrated photodetector-amplifier device
Assignee: AT&T Inc
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Filing: 1986-02-03
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Granted: 1989-08-02
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Expires: 2006-02-03
Abstract
Abstract An integrated photodetector-amplifier structure which features a p-region (21), intrinsic region (12), n-region photodetector (11) (PIN photodetector) and a self-aligned junction field-effect transistor (JFET) incorporated in the same integrated circuit. The photodetector is back illuminated, features a buried p-n junction so as to avoid surface leakage, vertical integration so that partial regrowth is not needed, and an air bridge (20) to isolate the capacitance of the PIN electrode (18) from the JFET structure. The invention includes integrated structures with more than one PIN and/or more than one JFET element.
Inventors
- 👤 Julian Cheng
- 👤 Bernard Collins Deloach, Jr.
- 👤 Stephen Ross Forrest
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:27
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
312 words
A semiconductor device comprising at least one PINFET structure, said PINFET structure comprising: (a) first region (11) comprising n-type III-V semiconducting compound; (b) second epitaxial region (12) comprising intrinsic III-V semiconductor compound, said second epitaxial layer contacting at least a portion of the first region; (c) third epitaxial region (13) comprising semi-insulating III-V semiconductor compound, said third epitaxial region contacting at least a portion of the second epitaxial region; (d) a JFET portion of the PINFET structure comprising fourth epitaxial region (14A) comprising III-V semiconductor compound with n-type conductivity said fourth epitaxial region contacting at least a portion of the third epitaxial region; (e) fifth epitaxial region (15A) comprising III-V semiconductor compound with p-type conductivity and contacting at least a portion of the fourth epitaxial region, said fifth epitaxial region having a length; (f) source (24) and drain (25) electrodes, said source and drain electrodes contacting said fourth epitaxial region; (g) gate electrode (19) contacting said fifth epitaxial region and having a length; (h) a PIN portion of the PINFET structure comprising a sixth epitaxial region (14B) comprising III-V semiconductor compound with n-type conductivity contacting at least a portion of the third epitaxial region not contacting the fourth of fifth epitaxial regions; (i) seventh epitaxial region (15B) comprising III-V semiconductor compound with p-type conductivity contacting at least a portion of the sixth epitaxial region but not contacting the fourth or fifth epitaxial regions; (j) a p-contact (18) comprising conductive material contacting at least a portion of the seventh epitaxial region and being electrically connected to the gate electrode by means of a conducting air bridge (20) which does not contact the third epitaxial region; and (k) a p-type conductivity region (21) extending from under the p-contact of the PIN structure through the seventh epitaxial regions the sixth epitaxial region, the third epitaxial region a nd at least contacting the second epitaxial region.
Claim 2
Dependent Claim
312 words
A semiconductor device comprising at least one PINFET structure, said PINFET structure comprising: (a) first region (11) comprising n-type III-V semiconducting compound; (b) second epitaxial region (12) comprising intrinsic III-V semiconductor compound, said second epitaxial layer contacting at least a portion of the first region; (c) third epitaxial region (13) comprising semi-insulating III-V semiconductor compound, said third epitaxial region contacting at least a portion of the second epitaxial region; (d) a JFET portion of the PINFET structure comprising fourth epitaxial region (14A) comprising III-V semiconductor compound with n-type conductivity said fourth epitaxial region contacting at least a portion of the third epitaxial region; (e) fifth epitaxial region (15A) comprising III-V semiconductor compound with p-type conductivity and contacting at least a portion of the fourth epitaxial region, said fifth epitaxial region having a length; (f) source (24) and drain (25) electrodes, said source and drain electrodes contacting said fourth epitaxial region; (g) gate electrode (19) contacting said fifth epitaxial region and having a length; (h) a PIN portion of the PINFET structure comprising a sixth epitaxial region (14B) comprising III-V semiconductor compound with n-type conductivity contacting at least a portion of the third epitaxial region not contacting the fourth of fifth epitaxial regions; (i) seventh epitaxial region (15B) comprising III-V semiconductor compound with p-type conductivity contacting at least a portion of the sixth epitaxial region but not contacting the fourth or fifth epitaxial regions; (j) a p-contact (18) comprising conductive material contacting at least a portion of the seventh epitaxial region and being electrically connected to the gate electrode by means of a conducting air bridge (20) which does not contact the third epitaxial region; and (k) a p-type conductivity region (21) extending from under the p-contact of the PIN structure through the seventh epitaxial regions the sixth epitaxial region, the third epitaxial region a nd at least contacting the second epitaxial region.
Claim 3
Dependent Claim
31 words
The semiconductor device according to claim 1, characterized in that the gate electrode (19) is positioned in the fifth epitaxial region (15A) so that it overhangs the fourth epitaxial region (14A).
Claim 4
Dependent Claim
38 words
The semiconductor device according to claim 1, characterized in that the length of the fifth epitaxial region (15A) measured along its interface with the fourth epitaxial region (14A) is less than the length of the gate electrode (19).
Claim 5
Dependent Claim
48 words
The semiconductor device according to claim 3, characterized in that the first region (11) is a substrate of n-type InP and the second, third, fourth, fifth, sixth and seventh epitaxial region (12, 13, 14A, 15A, 14B, 15B) are III-V semiconductor compounds with compositions that are lattice-matched to InP.
Claim 6
Dependent Claim
34 words
The semiconductor device according to claim 4, characterized in that the III-V semiconductor compound of the second epitaxial region (12) is intrinsic InGaAs with composition such that the InGaAs is approximately lattice-matched to InP.
Claim 7
Dependent Claim
25 words
The semiconductor device of claim 5, characterized in that the third epitaxial region (13) is Fe doped semi-insulating InP deposited by metallo-organic chemical vapor deposition.
Claim 8
Dependent Claim
33 words
The semiconductor device according to claim 1, characterized in that the fourth and sixth epitaxial regions (14A, 14B) comprises n-type InP and the fifth and seventh epitaxial regions (15A, 15B) comprise p-type InP.
Claim 9
Dependent Claim
33 words
The semiconductor device according to claim 1, characterized in that the fourth and sixth epitaxial regions (14A, 14B) are n-type InGaAs and the fifth and seventh epitaxial regions (15A, 15B) are p-type InP.
Claim 10
Dependent Claim
33 words
The semiconductor device according to claim 1, characterized in that the fourth and sixth epitaxial regions (14A, 14B) comprise n-type InP and the fifth and seventh epitaxial regions (15A, 15B) comprise p-type InGaAs.
Claim 11
Dependent Claim
33 words
The semiconductor device according to claim 1, characterized in that the fourth and sixth epitaxial regions (14A, 14B) comprise n-type InGaAs and the fifth and seventh epitaxial (15A, 15B) regions comprise p-type InP.
Claim 12
Dependent Claim
49 words
The semiconductor device according to claim 1, characterized in that the electrical connect ion between the p-contact (18) and the gate electrode (19) comprises an air bridge (20) so that sixth and seventh epitaxial regions (14B, 15B) do not electrically contact the fourth and fifth epitaxial regions (14A, 15A).
References Cited (Backward Citations)
No citation records indexed.
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