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US5118641A
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Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit
Assignee: Micron Technology Inc
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Filing: 1990-09-13
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Granted: 1992-06-02
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Expires: 2010-09-13
Abstract
Abstract Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit are disclosed. The present invention modifies the conventional LOCOS technique for forming active areas and field oxide areas on a silicon substrate. Rather than fully forming the field oxide regions immediately after the silicon nitride layer is patterned and etched on the substrate, a thin field oxide is grown. This oxide is partially wet etched to leave a ribbon of bare silicon around and extending under the edges of the silicon nitride mask. An additional nitride layer is deposited over the entire wafer and anisotropically etched to form a nitride spacer between the original nitride mask and the partially grown field oxide. The nitride spacer seals the edge of the active area by inhibiting the diffusion of oxygen under the nitride mask. During subsequent field oxidation, the nitride spacer greatly reduces the encroachment of the field oxide into the active area.
Inventors
- 👤 Martin C. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:14
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10W10/13; H10P; H10P14/00; H10P14/60; H10P14/61; H10W10/01; H10W10/011; H10W10/012; H10W10/0128
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
216 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device during local oxidation of silicon techniques, the method comprising the steps of: (a) preparing an initial gate oxide layer on a silicon substrate; (b) masking portions of the gate oxide layer to define active regions on the substrate and leaving other portions of the gate oxide layer unmasked; (c) partially oxidizing the silicon substrate on the unmasked portions of the gate oxide to form field oxide regions on the substrate having a partial final thickness; (d) isotropically removing a portion of the field oxide and gate oxide regions such that a ribbon of bare silicon is exposed and extends generally horizontally under an edge of the mask and between the field oxide and gate oxide; (e) depositing a layer of silicon nitride over the exposed portion of said substrate and the field oxide and mask situated thereon; (f) anisotropically etching the layer of silicon nitride such that the silicon nitride is removed from the field oxide and such that a silicon nitride spacer is retained in the region previously occupied by said exposed, bare silicon; and (g) oxidizing the silicon substrate on the partially formed field oxide regions to form field oxide regions on the substrate having a final thickness.
Claim 2
Independent Claim
216 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device during local oxidation of silicon techniques, the method comprising the steps of: (a) preparing an initial gate oxide layer on a silicon substrate; (b) masking portions of the gate oxide layer to define active regions on the substrate and leaving other portions of the gate oxide layer unmasked; (c) partially oxidizing the silicon substrate on the unmasked portions of the gate oxide to form field oxide regions on the substrate having a partial final thickness; (d) isotropically removing a portion of the field oxide and gate oxide regions such that a ribbon of bare silicon is exposed and extends generally horizontally under an edge of the mask and between the field oxide and gate oxide; (e) depositing a layer of silicon nitride over the exposed portion of said substrate and the field oxide and mask situated thereon; (f) anisotropically etching the layer of silicon nitride such that the silicon nitride is removed from the field oxide and such that a silicon nitride spacer is retained in the region previously occupied by said exposed, bare silicon; and (g) oxidizing the silicon substrate on the partially formed field oxide regions to form field oxide regions on the substrate having a final thickness.
Claim 3
Dependent Claim
27 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 1, wherein the mask includes silicon nitride.
Claim 4
Dependent Claim
60 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 1, wherein the silicon substrate under the unmasked portions of the gate oxide is partially oxidized to form field oxide regions on the substrate having the partial final thickness in the range from about 1500 Å to about 3000 Å.
Claim 5
Dependent Claim
40 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 1, wherein the portion of field oxide region is removed by etching the field oxide with a hydrofluoric acid solution.
Claim 6
Dependent Claim
42 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 4, wherein the hydrofluoric acid solution has a concentration in the range from about 5% HF to about 20% HF by weight.
Claim 7
Dependent Claim
38 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 4, wherein the layer of silicon nitride is deposited by the process of low pressure chemical vapor deposition.
Claim 8
Dependent Claim
43 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 4, wherein the layer of silicon nitride is deposited to a thickness in the range from about 700 Å to about 1200 Å.
Claim 9
Dependent Claim
58 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 1, wherein the silicon substrate under the partially oxidized field oxide regions is further oxidized to form field oxide regions on the substrate having the final thickness in the range from about 6000 Å to about 7000 Å.
Claim 10
Independent Claim
261 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device during local oxidation of silicon techniques, the method comprising the steps of: (a) preparing an initial gate oxide layer on a silicon substrate; (b) masking portions of the gate oxide layer with a silicon nitride mask to define active regions on the substrate and leaving other portions of the gate oxide layer unmasked; (c) partially oxidizing the silicon substrate under the unmasked portions of the gate oxide to form field oxide regions on the substrate having a thickness in the range from about 1500 Å to about 3000 Å; (d) isotropically removing a portion of the field oxide and gate oxide regions with a hydrofluoric acid solution such that a region of bare silicon is exposed and extends generally horizontally under an edge of the mask and between the field oxide and gate oxide; (e) depositing a layer of silicon nitride over the exposed portion of said substrate and the field oxide and mask formed thereon said layer having a thickness in the range from about 700 Å to about 1200 Å; (f) anisotropically etching the layer of silicon nitride such that the silicon nitride is removed from the field oxide and such that a silicon nitride spacer is retained in the region previously occupied by the exposed, bare silicon; and (g) oxidizing the silicon substrate on the partially formed field oxide regions to form field oxide regions on the substrate having a thickness in the range from about 6000 Å to about 7000 Å.
Claim 11
Independent Claim
261 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device during local oxidation of silicon techniques, the method comprising the steps of: (a) preparing an initial gate oxide layer on a silicon substrate; (b) masking portions of the gate oxide layer with a silicon nitride mask to define active regions on the substrate and leaving other portions of the gate oxide layer unmasked; (c) partially oxidizing the silicon substrate under the unmasked portions of the gate oxide to form field oxide regions on the substrate having a thickness in the range from about 1500 Å to about 3000 Å; (d) isotropically removing a portion of the field oxide and gate oxide regions with a hydrofluoric acid solution such that a region of bare silicon is exposed and extends generally horizontally under an edge of the mask and between the field oxide and gate oxide; (e) depositing a layer of silicon nitride over the exposed portion of said substrate and the field oxide and mask formed thereon said layer having a thickness in the range from about 700 Å to about 1200 Å; (f) anisotropically etching the layer of silicon nitride such that the silicon nitride is removed from the field oxide and such that a silicon nitride spacer is retained in the region previously occupied by the exposed, bare silicon; and (g) oxidizing the silicon substrate on the partially formed field oxide regions to form field oxide regions on the substrate having a thickness in the range from about 6000 Å to about 7000 Å.
Claim 12
Dependent Claim
42 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 9, wherein the hydrofluoric acid solution has a concentration in the range from about 5% HF to about 20% HF by weight.
Claim 13
Dependent Claim
38 words
A method for reducing encroachment of field oxide into the active area of a semiconductor device as defined in claim 9, wherein the layer of silicon nitride is deposited by the process of low pressure chemical vapor deposition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-02 | 1995-12-02 | 1996-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-02 | 1999-12-02 | 2000-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-02 | 2003-12-02 | 2004-06-02 | $7700.00 | Window Closed / Lapsed |