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US5113231A
Expired / Lapsed
US
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Quantum-effect semiconductor devices
Assignee: California Institute of Technology
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Filing: 1989-09-07
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Granted: 1992-05-12
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Expires: 2009-09-07
Abstract
Abstract A novel combination of semiconductor heterojunctions provide a quantum-effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band. A particular heterostructure comprising sequentially grown layers of indium arsenide, aluminum antimonide, gallium antimonide, aluminum antimonide and indium arsenide, permits electrons tunneling from the indium arsenide conduction band through the aluminum antimonide barrier into a sub-band level in the valence band quantum well of the gallium antimonide. This particular embodiment produced a current-voltage characteristic with negative differential resistance and a peak-to-valley current ratio of about 20 at room temperature and 88 at liquid nitrogen temperature. The present invention can be used either as a two-contact device such as a diode or a three-contact device such as a transistor.
Inventors
- 👤 Jan R. Soderstrom
- 👤 Thomas C. McGill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:55
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D10/881; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D8/00; H10D8/70; H10D8/755
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
123 words
A tunneling electronic semiconductor device comprising: a series of abutting material layers, the electron energy levels of which provide a quantum well layer between adjacent layers, the valence electron energy level of said quantum well layer being higher than the conduction electron energy level of said adjacent layer at a first selected bias voltage across said series of layers and the valence electron energy level of said quantum well layer being lower than the conduction electron energy level of said adjacent layers at a second selected bias voltage across said series of layers, whereby maximum tunneling current flows through said device during application of said first bias voltage and minimum tunneling current flows through said device during application of said second bias voltage.
Claim 2
Dependent Claim
123 words
A tunneling electronic semiconductor device comprising: a series of abutting material layers, the electron energy levels of which provide a quantum well layer between adjacent layers, the valence electron energy level of said quantum well layer being higher than the conduction electron energy level of said adjacent layer at a first selected bias voltage across said series of layers and the valence electron energy level of said quantum well layer being lower than the conduction electron energy level of said adjacent layers at a second selected bias voltage across said series of layers, whereby maximum tunneling current flows through said device during application of said first bias voltage and minimum tunneling current flows through said device during application of said second bias voltage.
Claim 3
Dependent Claim
14 words
The device recited in claim 1 wherein said series of material layers comprises InAs/AlSb/GaSb/AlSb/InAs.
Claim 4
Dependent Claim
12 words
The device recited in claim 1 wherein said device is a diode.
Claim 5
Dependent Claim
12 words
The device recited in claim 1 wherein said device is a transistor.
Claim 6
Dependent Claim
35 words
The device recited in claim 1 wherein the ratio of said maximum current to said minimum current is at least about 20 at room temperature and is at least about 88 at 77 degrees KELVIN.
Claim 7
Dependent Claim
122 words
A resonant interband tunneling electronic device comprising: a quantum well layer; a pair of barrier layers sandwiching said quantum well layer; and a pair of contact layers sandwiching said barrier layers and said well layer; the valence energy level of said well layer being higher than the conduction energy level of said contact layers at a first selected bias voltage across said device and the valence energy level of said well layer being lower than the conduction energy level of said contact layers at a second selected bias voltage across said device; whereby maximum tunneling current flows through said device during application of said first bias voltage and minimum tunneling current flows through said device during application of said second bias voltage.
Claim 8
Dependent Claim
122 words
A resonant interband tunneling electronic device comprising: a quantum well layer; a pair of barrier layers sandwiching said quantum well layer; and a pair of contact layers sandwiching said barrier layers and said well layer; the valence energy level of said well layer being higher than the conduction energy level of said contact layers at a first selected bias voltage across said device and the valence energy level of said well layer being lower than the conduction energy level of said contact layers at a second selected bias voltage across said device; whereby maximum tunneling current flows through said device during application of said first bias voltage and minimum tunneling current flows through said device during application of said second bias voltage.
Claim 9
Dependent Claim
13 words
The device recited in claim 6 wherein said quantum well layer comprises GaSb.
Claim 10
Dependent Claim
12 words
The device recited in claim 6 wherein said barrier layers comprise AlSb.
Claim 11
Dependent Claim
12 words
The device recited in claim 6 wherein said contact layers comprise InAs.
Claim 12
Dependent Claim
103 words
A heterostructure interband tunneling electronic device comprising: a quantum well layer; a barrier layer; and a contact layer; the valence energy level of said well layer being selectively adjustable to be higher and lower than the conduction energy level of said contact layer depending upon the bias voltage across said device; whereby maximum tunneling current flows through said device during application of a first bias voltage to raise said valance energy level above said conduction energy level and minimum tunneling current flows through said device during application of a second bias voltage to lower said valance energy level below said conduction energy level.
Claim 13
Dependent Claim
103 words
A heterostructure interband tunneling electronic device comprising: a quantum well layer; a barrier layer; and a contact layer; the valence energy level of said well layer being selectively adjustable to be higher and lower than the conduction energy level of said contact layer depending upon the bias voltage across said device; whereby maximum tunneling current flows through said device during application of a first bias voltage to raise said valance energy level above said conduction energy level and minimum tunneling current flows through said device during application of a second bias voltage to lower said valance energy level below said conduction energy level.
Claim 14
Dependent Claim
13 words
The device recited in claim 10 wherein said quantum well layer comprises GaSb.
Claim 15
Dependent Claim
12 words
The device recited in claim 10 wherein said barrier layer comprises AlSb.
Claim 16
Dependent Claim
12 words
The device recited in claim 10 wherein said contact layer comprises InAs.
Claim 17
Dependent Claim
12 words
The device recited in claim 10 further comprising a substrate of GaAs.
Claim 18
Dependent Claim
129 words
A quantum-effect transistor comprising: a epitaxially-grown series of material layers on a underlying substrate; said layers having a quantum well layer sandwiched between two barrier layers which are in turn, sandwiched between two contact layers; said well layer having a valence energy level which can be made selectively higher and lower than the conduction energy level of said contact layer depending upon the magnitude of a bias voltage established between said well layer and a contact layer; whereby maximum tunneling current flows through said transistor during application of a first bias voltage to raise said valence energy level above said conduction energy level and minimum tunneling current flows through said transistor during application of a second bias voltage to lower said valance energy level below said conduction energy level.
Claim 19
Dependent Claim
129 words
A quantum-effect transistor comprising: a epitaxially-grown series of material layers on a underlying substrate; said layers having a quantum well layer sandwiched between two barrier layers which are in turn, sandwiched between two contact layers; said well layer having a valence energy level which can be made selectively higher and lower than the conduction energy level of said contact layer depending upon the magnitude of a bias voltage established between said well layer and a contact layer; whereby maximum tunneling current flows through said transistor during application of a first bias voltage to raise said valence energy level above said conduction energy level and minimum tunneling current flows through said transistor during application of a second bias voltage to lower said valance energy level below said conduction energy level.
Claim 20
Dependent Claim
13 words
The transistor recited in claim 15 wherein said quantum well layer comprises GaSb.
Claim 21
Dependent Claim
12 words
The transistor recited in claim 15 wherein said barrier layers comprise AlSb.
Claim 22
Dependent Claim
12 words
The transistor recited in claim 15 wherein said contact layers comprise InAs.
Claim 23
Dependent Claim
16 words
The transistor recited in claim 15 wherein said well layer is the base of said transistor.
Claim 24
Dependent Claim
16 words
The transistor recited in claim 15 wherein said well layer is the collector of said transistor.
Claim 25
Dependent Claim
127 words
A quantum-effect electronic device of the type in which current flow is determined by the number of tunneling hole carriers, the device comprising: a quantum well layer of material; a barrier layer of material; and a contact layer of material; the valence energy band edge of the contact layer being selectively made higher and lower than the conduction energy band edge of the well layer depending upon the bias voltage magnitude applied across said layers; whereby maximum tunneling current flows through said device during application of a first bias voltage to raise said valance energy level above said conduction energy level and minimum tunneling current flows through said device during application of a second bias voltage to lower said valance energy level below said conduction energy level.
Claim 26
Dependent Claim
127 words
A quantum-effect electronic device of the type in which current flow is determined by the number of tunneling hole carriers, the device comprising: a quantum well layer of material; a barrier layer of material; and a contact layer of material; the valence energy band edge of the contact layer being selectively made higher and lower than the conduction energy band edge of the well layer depending upon the bias voltage magnitude applied across said layers; whereby maximum tunneling current flows through said device during application of a first bias voltage to raise said valance energy level above said conduction energy level and minimum tunneling current flows through said device during application of a second bias voltage to lower said valance energy level below said conduction energy level.
References Cited (Backward Citations)
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