Patent US5111471A successfully refreshed from Google Patents.
US5111471A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-01-07
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Granted: 1992-05-05
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Expires: 2011-01-07
Abstract
Abstract A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.
Inventors
- 👤 Ryo Hattori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
188 words
A semiconductor laser device comprising: an InP substrate of a first conductivity type; a first InP current blocking layer of a second conductivity type opposite said first conductivity type disposed on said substrate; an InP buried layer of said first conductivity type disposed on said substrate, surrounded by said first current blocking layer, and having the same thickness as said first current blocking layer; a ridge including a double heterojunction structure comprising a first InP cladding layer of said first conductivity type, an InGaAsP active layer, and a second InP cladding layer of said second conductivity type, said first cladding layer, said active layer, and said second cladding layer being substantially planar and stacked in the named order on said InP buried layer, said ridge and InP buried layer each having a width, said widths being substantially the same; a second InP current blocking layer of said first conductivity type disposed on said first InP current blocking layer surrounding said ridge; and a contact layer of said second conductivity type disposed opposite and in contact with said second InP current blocking layer and said second InP cladding layer.
Claim 2
Dependent Claim
188 words
A semiconductor laser device comprising: an InP substrate of a first conductivity type; a first InP current blocking layer of a second conductivity type opposite said first conductivity type disposed on said substrate; an InP buried layer of said first conductivity type disposed on said substrate, surrounded by said first current blocking layer, and having the same thickness as said first current blocking layer; a ridge including a double heterojunction structure comprising a first InP cladding layer of said first conductivity type, an InGaAsP active layer, and a second InP cladding layer of said second conductivity type, said first cladding layer, said active layer, and said second cladding layer being substantially planar and stacked in the named order on said InP buried layer, said ridge and InP buried layer each having a width, said widths being substantially the same; a second InP current blocking layer of said first conductivity type disposed on said first InP current blocking layer surrounding said ridge; and a contact layer of said second conductivity type disposed opposite and in contact with said second InP current blocking layer and said second InP cladding layer.
Claim 3
Dependent Claim
51 words
A semiconductor laser device according to claim 1 wherein said first InP current blocking layer and said InP buried layer surrounded by said first InP current blocking layer are disposed on said InP substrate of said first conductivity type with an InP buffer layer of said first conductivity type disposed therebetween.
Claim 4
Dependent Claim
201 words
A semiconductor laser device comprising: an InP substrate of a first conductivity type; a first InP current blocking layer of a second conductivity type opposite said first conductivity type disposed on said substrate; an InP buried layer of said first conductivity type disposed on said substrate, surrounded by said first current blocking layer, and having the same thickness as said first current blocking layer; a ridge including a double heterojunction structure comprising a first InP cladding layer of said first conductivity type, an InGaAsP active layer, and a second InP cladding layer of said second conductivity type, said first cladding layer, said active layer, and said second cladding layer being substantially planar and stacked in the named order on said InP buried layer, said ridge and InP buried layer each having a width, said widths being substantially the same; a second InP current blocking layer of said first conductivity type disposed on said first InP current blocking layer surrounding said ridge; a contact layer of said second conductivity type disposed opposite and in contact with said second InP current blocking layer and said second InP cladding layer; and a diffraction grating layer of InGaAsP disposed in said second InP cladding layer.
Claim 5
Dependent Claim
201 words
A semiconductor laser device comprising: an InP substrate of a first conductivity type; a first InP current blocking layer of a second conductivity type opposite said first conductivity type disposed on said substrate; an InP buried layer of said first conductivity type disposed on said substrate, surrounded by said first current blocking layer, and having the same thickness as said first current blocking layer; a ridge including a double heterojunction structure comprising a first InP cladding layer of said first conductivity type, an InGaAsP active layer, and a second InP cladding layer of said second conductivity type, said first cladding layer, said active layer, and said second cladding layer being substantially planar and stacked in the named order on said InP buried layer, said ridge and InP buried layer each having a width, said widths being substantially the same; a second InP current blocking layer of said first conductivity type disposed on said first InP current blocking layer surrounding said ridge; a contact layer of said second conductivity type disposed opposite and in contact with said second InP current blocking layer and said second InP cladding layer; and a diffraction grating layer of InGaAsP disposed in said second InP cladding layer.
Claim 6
Dependent Claim
51 words
A semiconductor laser device according to claim 3 wherein said first InP current blocking layer and said InP buried layer surrounded by said first InP current blocking layer are disposed on said InP substrate of said first conductivity type with an InP buffer layer of said first conductivity type disposed therebetween.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |