EP0157555A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A semiconductor laser and a method of producing the same
Assignee: Panasonic Holdings Corp
•
Filing: 1985-03-22
•
Granted: —
•
Expires: 2005-03-22
Abstract
Abstract A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection of the surface of a semiconductor substrate (10), and forming multilayered thin films (11,12,13, 14) with a double heterostructure including an active layer (12) on said semiconductor substrate (10) by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe- structure semiconductor laser can be produced by a sequence of crystal growth processes.
Inventors
- 👤 Akio Yoshikawa
- 👤 Takashi Sugino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S148/11
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
143 words
A semiconductor laser having multilayered films with a double heterostructure including an active layer (12) which are formed on a conductive substrate (10) with a stripe-shaped projection; said multilayered film comprising a first group of multilayered films incuding a first active layer portion (12) and a first film portion (13) thereon which are formed above both sides of said projection, and a second group of multilayered films including a second active layer portion (12) and a second film portion (13) thereon which are formed above said projection, said first and second groups of multilayered films being formed in the same order; and said first group being formed with a top layer (14) of the same conductivity type as that of said substrate, and said second group being formed with a top layer (15) of the opposite conductivity type as that of said substrate.
Claim 2
Dependent Claim
143 words
A semiconductor laser having multilayered films with a double heterostructure including an active layer (12) which are formed on a conductive substrate (10) with a stripe-shaped projection; said multilayered film comprising a first group of multilayered films incuding a first active layer portion (12) and a first film portion (13) thereon which are formed above both sides of said projection, and a second group of multilayered films including a second active layer portion (12) and a second film portion (13) thereon which are formed above said projection, said first and second groups of multilayered films being formed in the same order; and said first group being formed with a top layer (14) of the same conductivity type as that of said substrate, and said second group being formed with a top layer (15) of the opposite conductivity type as that of said substrate.
Claim 3
Dependent Claim
206 words
A semiconductor laser comprising: a conductive substrate (10); a stripe-shaped projection (10a) formed with a root portion on a surface of said conductive substrate and having a top flat surface and adjacent side surfaces which make a respective obtuse angle, said root portion having one side surface continuous to one of said side surfaces which makes an angle smaller than 90 degrees with said flat surface; multilayered thin films with a double heterostructure including an active layer (12) which are formed on said conductive substrate (10) and such a stripe-shaped projection, said multilayered films comprising a first group of multilayered films including a first active layer portion (12) and a first film portion (13) thereon which are formed above both sides of said projection, and a second group of multilayered films including a second active layer portion (12) and a second film portion (13) thereon which are formed above said projection, said first and second groups of multilayered films being formed in the same order; said first group being formed with a top layer (14) of the same conductivity type as that of said substrate, and said second group being formed with a top layer (15) of the opposite conductivity type as that of said substrate.
Claim 4
Dependent Claim
206 words
A semiconductor laser comprising: a conductive substrate (10); a stripe-shaped projection (10a) formed with a root portion on a surface of said conductive substrate and having a top flat surface and adjacent side surfaces which make a respective obtuse angle, said root portion having one side surface continuous to one of said side surfaces which makes an angle smaller than 90 degrees with said flat surface; multilayered thin films with a double heterostructure including an active layer (12) which are formed on said conductive substrate (10) and such a stripe-shaped projection, said multilayered films comprising a first group of multilayered films including a first active layer portion (12) and a first film portion (13) thereon which are formed above both sides of said projection, and a second group of multilayered films including a second active layer portion (12) and a second film portion (13) thereon which are formed above said projection, said first and second groups of multilayered films being formed in the same order; said first group being formed with a top layer (14) of the same conductivity type as that of said substrate, and said second group being formed with a top layer (15) of the opposite conductivity type as that of said substrate.
Claim 5
Dependent Claim
120 words
A semiconductor laser comprising: a conductive substrate (10); a stripe-shaped reverse-mesa-shaped projection (10a) formed on one surface of said substrate; multilayered films with a double heterostructure including an active layer (12) and comprising first and second groups of multilayered films, including first and second active layer portions and first and second film portions (13) thereon respectively, which are independently layered in the same order above both sides of said projection and above said projection respectively; a first top layer (14) formed on said first group films and having the same conductivity type as that of said substrate; and a second top layer (15) formed on said second group films and having the opposite conductivity type as that of said substrate.
Claim 6
Dependent Claim
120 words
A semiconductor laser comprising: a conductive substrate (10); a stripe-shaped reverse-mesa-shaped projection (10a) formed on one surface of said substrate; multilayered films with a double heterostructure including an active layer (12) and comprising first and second groups of multilayered films, including first and second active layer portions and first and second film portions (13) thereon respectively, which are independently layered in the same order above both sides of said projection and above said projection respectively; a first top layer (14) formed on said first group films and having the same conductivity type as that of said substrate; and a second top layer (15) formed on said second group films and having the opposite conductivity type as that of said substrate.
Claim 7
Independent Claim
108 words
A method of producing semiconductor lasers, comprising the steps of: forming a stripe-shaped projection on the surface of a semiconductor substrate (10); growing multilayered thin films (11, 12, 13, 14) with double heterostructure including an active layer (12), the top layer (14) of which has the same conductivity as that of said semiconductor substrate (10), by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate (10) into the top layer (14) of said multilayered thin films (11, 12, 13, 14) formed on said striped-shaped projection.
Claim 8
Independent Claim
108 words
A method of producing semiconductor lasers, comprising the steps of: forming a stripe-shaped projection on the surface of a semiconductor substrate (10); growing multilayered thin films (11, 12, 13, 14) with double heterostructure including an active layer (12), the top layer (14) of which has the same conductivity as that of said semiconductor substrate (10), by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate (10) into the top layer (14) of said multilayered thin films (11, 12, 13, 14) formed on said striped-shaped projection.
Claim 9
Dependent Claim
21 words
A method of producing semiconductor layers according to claim 4, wherein said stripe shaped projection is of reverse mesa shape (lOa).
Claim 10
Dependent Claim
61 words
A method of producing semiconductor lasers according to claim 4, wherein said stripe shaped projection is so shaped that its top flat surface and both sides adjacent to said top flat surface make an obtuse angle and that sides continuous to said adjacent sides to said top of said projection and said top flat surface make an angle smaller than 90°.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.