Patent US5110679A successfully refreshed from Google Patents.
US5110679A
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Hard carbon nitride and method for preparing same
Assignee: University of California, San Diego
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Filing: 1990-04-24
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Granted: 1992-05-05
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Expires: 2010-04-24
Abstract
Abstract Novel crystalline α (silicon nitride-like)-carbon nitride and β (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.
Inventors
- 👤 Eugene E. Haller
- 👤 Marvin L. Cohen
- 👤 William L. Hansen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:00
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0658; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
43 words
A method of preparing at least partially sp 3 -bonded crystalline carbon nitride comprising the step of depositing carbon and nitrogen radicals upon a crystalline substrate having appropriate lattice parameters and orientation for formation thereon of said sp 3 -bonded crystalline carbon nitride.
Claim 2
Independent Claim
43 words
A method of preparing at least partially sp 3 -bonded crystalline carbon nitride comprising the step of depositing carbon and nitrogen radicals upon a crystalline substrate having appropriate lattice parameters and orientation for formation thereon of said sp 3 -bonded crystalline carbon nitride.
Claim 3
Dependent Claim
97 words
A method according to claim 1 wherein said sp 3 -bonded crystalline carbon nitride comprises crystalline β-C 3 N 4 and/or α-C 3 N 4 , comprising the step of applying a source of energy to a carbonaceous target, in the presence of a nitrogen atmosphere, said energy being sufficient to sputter at least a portion of said target onto a substrate to form a crystalline α- and/or β-C 3 N 4 phase upon said substrate, wherein said substrate comprises an oriented single crystal of silicon, germanium, or other crystalline substrate having appropriate lattice parameters and orientation.
Claim 4
Dependent Claim
13 words
A method according to claim 2, wherein said substrate comprises single crystal silicon.
Claim 5
Dependent Claim
26 words
A method according to claim 3, wherein said single crystal silicon is has a surface of (100) orientation and β-C 3 N 4 is formed thereon.
Claim 6
Dependent Claim
13 words
A method according to claim 3 or 4, wherein said target comprises carbon.
Claim 7
Dependent Claim
18 words
A method according to claim 5, wherein said source of energy comprises energy generated by an RF diode.
Claim 8
Dependent Claim
13 words
A method according to claim 5, wherein said atmosphere consists essentially of nitrogen.
Claim 9
Dependent Claim
23 words
A method according to claim 1 wherein said carbon and nitrogen radicals are formed in a plasma consisting essentially of cyanogen and nitrogen.
Claim 10
Dependent Claim
14 words
A method according to claim 2, wherein said substrate comprises a single crystal germanium.
Claim 11
Dependent Claim
25 words
A method according to claim 9, wherein said single crystal germanium has a surface of (111) orientation and α-C 3 N 4 is formed thereon.
Claim 12
Dependent Claim
13 words
A method according to claim 9 or 10, wherein said target comprises carbon.
Claim 13
Dependent Claim
18 words
A method according to claim 11, wherein said source of energy comprises energy generated by an RF diode.
Claim 14
Dependent Claim
13 words
A method according to claim 12, wherein said atmosphere consists essentially of nitrogen.
Claim 15
Dependent Claim
6 words
Crystalline sp 3 -bonded carbon nitride.
Claim 16
Dependent Claim
6 words
Crystalline sp 3 -bonded carbon nitride.
Claim 17
Dependent Claim
4 words
Crystalline β-phase carbon nitride.
Claim 18
Dependent Claim
4 words
Crystalline β-phase carbon nitride.
Claim 19
Dependent Claim
17 words
Crystalline β-phase carbon nitride according to claim 15 having the empirical formula C 3 N 4 .
Claim 20
Dependent Claim
13 words
A composite comprising crystalline β-phase carbon nitride on a single crystal silicon substrate.
Claim 21
Dependent Claim
13 words
A composite comprising crystalline β-phase carbon nitride on a single crystal silicon substrate.
Claim 22
Dependent Claim
19 words
A composite according to claim 17, wherein said β-phase carbon nitride has the formula C 3 N 4 .
Claim 23
Dependent Claim
19 words
A composite according to claim 17 or 18, wherein said single crystal silicon has a surface of (100) orientation.
Claim 24
Dependent Claim
4 words
Crystalline α-phase carbon nitride.
Claim 25
Dependent Claim
4 words
Crystalline α-phase carbon nitride.
Claim 26
Dependent Claim
17 words
Crystalline α-phase carbon nitride according to claim 20 having the empirical formula C 3 N 4 .
Claim 27
Dependent Claim
13 words
A composite comprising crystalline α-phase carbon nitride on a single crystal germanium substrate.
Claim 28
Dependent Claim
13 words
A composite comprising crystalline α-phase carbon nitride on a single crystal germanium substrate.
Claim 29
Dependent Claim
20 words
A composite according to claim 22, wherein said α-phase carbon nitride has the empirical formula C 3 N 4 .
Claim 30
Dependent Claim
17 words
A composite according to claims 22 or 23, wherein said germanium has a surface of (111) orientation.
Claim 31
Dependent Claim
13 words
A product comprising α-phase carbon nitride made according to claim 9 or 10.
Claim 32
Dependent Claim
14 words
A product comprising α-phase carbon nitride made according to the process of claim 11.
Claim 33
Dependent Claim
14 words
A product comprising α-phase carbon nitride made according to the process of claim 12.
Claim 34
Dependent Claim
15 words
A product comprising α-phase carbon nitride and made according to the process of claim 13.
Claim 35
Dependent Claim
44 words
A composition of matter comprising β-phase carbon nitride made by a method comprising the step of depositing carbon and nitrogen radicals upon a crystalline substrate having appropriate lattice parameters and orientation for formation thereon of at least partially sp 3 -bonded crystalline carbon nitride.
Claim 36
Dependent Claim
44 words
A composition of matter comprising β-phase carbon nitride made by a method comprising the step of depositing carbon and nitrogen radicals upon a crystalline substrate having appropriate lattice parameters and orientation for formation thereon of at least partially sp 3 -bonded crystalline carbon nitride.
Claim 37
Dependent Claim
81 words
A composition of matter comprising β-phase carbon nitride made by a method comprising the step of applying a source of energy to a carbonaceous target in the presence of a nitrogen atmosphere, said energy being sufficient to sputter at least a portion of said target onto a substrate to form a crystalline β-C 3 N 4 phase upon said substrate, wherein said substrate comprises an oriented single crystal of silicon, germanium, or other crystalline substrate having appropriate lattice parameters and orientation.
Claim 38
Dependent Claim
81 words
A composition of matter comprising β-phase carbon nitride made by a method comprising the step of applying a source of energy to a carbonaceous target in the presence of a nitrogen atmosphere, said energy being sufficient to sputter at least a portion of said target onto a substrate to form a crystalline β-C 3 N 4 phase upon said substrate, wherein said substrate comprises an oriented single crystal of silicon, germanium, or other crystalline substrate having appropriate lattice parameters and orientation.
Claim 39
Dependent Claim
15 words
A composition of matter according to claim 30 wherein said substrate comprises single crystal silicon.
Claim 40
Dependent Claim
19 words
A composition of matter according to claim 31 wherein said single crystal silicon has a surface of (100) orientation.
Claim 41
Dependent Claim
15 words
A composition of matter according to claim 31 or 32 wherein said target comprises carbon.
Claim 42
Dependent Claim
20 words
A composition of matter according to claim 33 wherein said source of energy comprises energy generated by an RF diode.
Claim 43
Dependent Claim
15 words
A composition of matter according to claim 33 wherein said atmosphere consists essentially of nitrogen.
Claim 44
Dependent Claim
16 words
A composition of matter according to claim 30 wherein said substrate comprises a single crystalline germanium.
References Cited (Backward Citations)
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