Patent US5109266A successfully refreshed from Google Patents.
US5109266A
Expired / Lapsed
US
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Semiconductor integrated circuit device having high breakdown-voltage to applied voltage
Assignee: Mitsubishi Electric Corp
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Filing: 1991-02-05
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Granted: 1992-04-28
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Expires: 2011-02-05
Abstract
Abstract A semiconductor integrated circuit device according to the present invention has a field plate disposed between the element isolation region which surrounds a semiconductor active element and an electrode wiring which is disposed to traverse the element isolation region while being electrically connected with the semiconductor active element, and a predetermined voltage is applied to the field plate. Accordingly, a concentration of the electric field is relieved not only at the boundary region between the element isolating region and the surface of the semiconductor active element which the electrode wiring traverses, but also at the surface of the semiconductor active element under the edge of the field plate, which eventually makes it possible to raise the breakdown-voltage of the semiconductor integrated circuit device.
Inventors
- 👤 Takeshi Kida
- 👤 Goro Mitarai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:42
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
129 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element and maintained at a first predetermined voltage; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, said field plate being maintained at a second predetermined voltage different from said first predetermined voltage.
Claim 2
Dependent Claim
129 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element and maintained at a first predetermined voltage; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, said field plate being maintained at a second predetermined voltage different from said first predetermined voltage.
Claim 3
Dependent Claim
86 words
A semiconductor integrated circuit device in accordance with claim 1, wherein said field plate is shaped in convexity at a position corresponding to said element isolating region and the major surface of said substrate in the vicinity of said element isolating region, the thickness of said insulation layer between a region of said field plate shaped in convexity and said element isolating region being thicker than that of said insulation layer between the remaining region of said field plate and the major surface of said substrate.
Claim 4
Dependent Claim
65 words
A semiconductor integrated circuit device in accordance with claim 1, wherein said field plate is disposed in an inclined state with respect to the major surface of said substrate, and the thickness of said insulation layer disposed under said field plate is thickest at a position corresponding to said element isolating region and becomes thinner as a position goes away from said element isolating region.
Claim 5
Dependent Claim
60 words
A semiconductor integrated circuit device in accordance with claim 1, further comprising a resistor connected with said electrode wiring, said field plate and said element isolating region to set the voltage of said field plate to said second predetermined voltage based on a voltage applied to said electrode wiring and said first predetermined voltage applied to said element isolating region.
Claim 6
Dependent Claim
19 words
A semiconductor integrated circuit device in accordance with claim 1, wherein said semiconductor active element is a bipolar transistor.
Claim 7
Dependent Claim
18 words
A semiconductor integrated circuit device in accordance with claim 1, wherein said semiconductor active element is a diode.
Claim 8
Dependent Claim
187 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; wherein said field plate is shaped in convexity at a position corresponding to said element isolating region and the major surface of said substrate in the vicinity of said element isolating region, the thickness of said insulation layer between a region of said field plate shaped in convexity and said element isolating region being thicker than that of said insulation layer between the remaining region of said field plate and the major surface of said substrate.
Claim 9
Dependent Claim
187 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; wherein said field plate is shaped in convexity at a position corresponding to said element isolating region and the major surface of said substrate in the vicinity of said element isolating region, the thickness of said insulation layer between a region of said field plate shaped in convexity and said element isolating region being thicker than that of said insulation layer between the remaining region of said field plate and the major surface of said substrate.
Claim 10
Dependent Claim
164 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; wherein said field plate is disposed in an inclined state with respect to the major surface of said substrate, and the thickness of said insulation layer disposed under said field plate is thickest at a position corresponding to said element isolating region and becomes thinner at positions away from said element isolating region.
Claim 11
Dependent Claim
164 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; wherein said field plate is disposed in an inclined state with respect to the major surface of said substrate, and the thickness of said insulation layer disposed under said field plate is thickest at a position corresponding to said element isolating region and becomes thinner at positions away from said element isolating region.
Claim 12
Dependent Claim
155 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; and a resistor connected with said electrode wiring, said field plate and said element isolating region to set the voltage of said field plate to a level intermediate a voltage applied to said electrode wiring and a voltage applied to said element isolating region.
Claim 13
Dependent Claim
155 words
A semiconductor integrated circuit device having a high breakdown-voltage characteristic, said device comprising: a substrate having a main surface; a semiconductor active element formed in the main surface of said substrate; an element isolating region formed in said substrate to surround said semiconductor active element; an insulation layer formed on the main surface of said substrate and said element isolating region; an electrode wiring formed on said insulation layer to traverse said element isolating region through said insulation layer and connected electrically with said semiconductor active element; and a field plate disposed along said electrode wiring in said insulation layer to traverse said element isolating region, and receiving a predetermined voltage; and a resistor connected with said electrode wiring, said field plate and said element isolating region to set the voltage of said field plate to a level intermediate a voltage applied to said electrode wiring and a voltage applied to said element isolating region.
References Cited (Backward Citations)
US4292642A
Cited
US4868819A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |