Patent US5109205A successfully refreshed from Google Patents.
US5109205A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Millimeter wave microstrip shunt-mounted pin diode switch with particular bias means
Assignee: Honeywell Inc
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Filing: 1990-11-08
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Granted: 1992-04-28
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Expires: 2010-11-08
Abstract
Abstract A millimeter wave microstrip shunt-mounted PIN diode switch having its DC ground separate from RF ground is created by utilizing a fan structure (radial stub) having a radius of approximately one-quarter wavelength to provide an RF ground at that location and then coupling the DC bias supplies to that RF ground location. By doing so and by proper attention to known design practices for laying out microstrip circuitry, the need for blocking capacitors required by prior art arrangements is eliminated.
Inventors
- 👤 Rebecca A. Hart
- 👤 John R. Lamberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:45
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/10; H01P1/15
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
208 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage.
Claim 2
Dependent Claim
208 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage.
Claim 3
Dependent Claim
39 words
The millimeter wave microstrip shunt-mounted PIN diode switch as in claim 1 and further including conductor means connecting said pattern to said ground plane to form a DC ground point whereby said pattern is at a common DC potential.
Claim 4
Dependent Claim
24 words
The millimeter wave microstrip shunt-mounted PIN diode switch as in claim 2 wherein said DC ground point is separate from said RF ground point.
Claim 5
Dependent Claim
255 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage said pattern also including first and second open circuit stub means individually coupled to said one electrode of said first and second PIN diodes for providing an inductive reactance sufficient to null any capacitance reactance exhibited by said PIN diodes at the frequency of said RF signals.
Claim 6
Dependent Claim
255 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage said pattern also including first and second open circuit stub means individually coupled to said one electrode of said first and second PIN diodes for providing an inductive reactance sufficient to null any capacitance reactance exhibited by said PIN diodes at the frequency of said RF signals.
Claim 7
Dependent Claim
245 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals, wherein said etched matching transformers coupling said source of RF signals to said switch point and said switch point to said first and second output terminals matches said switch point to transmission lines of a predetermined impedance; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage.
Claim 8
Dependent Claim
245 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals, wherein said etched matching transformers coupling said source of RF signals to said switch point and said switch point to said first and second output terminals matches said switch point to transmission lines of a predetermined impedance; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage.
Claim 9
Dependent Claim
263 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage, wherein said first and second fans are individually coupled to said other electrodes of said first and second PIN diodes by an etched short circuit stub means, said short circuit stub means providing a capacitive reactance for nulling any inductive reactance of said first and second PIN diodes at the frequency of said RF signals.
Claim 10
Dependent Claim
263 words
A millimeter wave microstrip shunt-mounted PIN diode switch comprising: (a) a source of RF input signals of millimeter wavelength; (b) first and second sources of DC bias voltage; (c) a microstrip circuit including a ground plane, an insulating substrate having first and second major surfaces, said first major surface being affixed to said ground plane and an etched conductor pattern affixed to said second major surface of said insulating substrate, said pattern including etched matching transformer means for coupling said source of RF signals to a switch point and said switch point to at least two output terminals; (d) first and second PIN diodes each having one electrode thereof coupled between said switch point and a different one of said two output terminals and spaced from said switch point by a distance of λ/4, where λ is the wavelength of said RF input signals; and (e) said pattern further including first and second fan segments individually coupled to the other electrode of said first and second PIN diodes by further matching transformer means, said first and second fan segments providing an RF ground point for said source of RF input signals, to thereby block said RF signal from reaching said first and second sources of DC bias voltage, wherein said first and second fans are individually coupled to said other electrodes of said first and second PIN diodes by an etched short circuit stub means, said short circuit stub means providing a capacitive reactance for nulling any inductive reactance of said first and second PIN diodes at the frequency of said RF signals.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |