Semiconductor device for control of light

Claim 2

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for biasing said lamination layer in a forward direction so as to inject current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer may be changed by said injected current, said means including two semiconductor layers; wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer; and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled.

Claim 3

A light control semiconductor device according to claim 1, wherein the respective semiconductor thin films constituting said lamination layer have a thickness which causes exciton confinement effect to take plane and causes energy at the absorption peak of excitons to coincide with energy of light to be controlled, and said lamination layer is of a multi-quantum well (MQW) structure.

Claim 4

A light control semiconductor device according to claim 1, wherein said means for biasing said lamination layer includes one of said two semiconductor layers being a p-type doped semiconductor layer and the other of said two semiconductor layers being an n-type doped semiconductor layer and said lamination layer is interposed between said p-type doped and n-type doped semiconductor layers.

Claim 5

A light control semiconductor device according to claim 1, wherein said means for biasing said lamination layer includes said two semiconductor layers both being n-type doped semiconductor layers and said lamination layer is interposed between said two n-type doped semiconductor layers.

Claim 6

A light control semiconductor device according to claim 1, wherein said means for biasing said lamination layer includes said two semiconductor layers both being p-type doped semiconductor layers and said lamination layer is interposed between said two p-type doped semiconductor layers.

Claim 7

A light control semiconductor device according to claim 3, wherein said lamination layer is so doped as to be of n-type.

Claim 8

A light control semiconductor device according to claim 4, wherein said lamination layer is so doped as to be of n-type.

Claim 9

A light control semiconductor device according to claim 5, wherein said lamination layer is so doped as to be of n-type.

Claim 10

A light control semiconductor device according to claim 3, wherein said lamination layer is so doped as to be of p-type.

Claim 11

A light control semiconductor device according to claim 4, wherein said lamination layer is so doped as to be of p-type.

Claim 12

A light control semiconductor device according to claim 5, wherein said lamination layer is so doped as to be p-type.

Claim 13

A light control semiconductor device according to claim 1, wherein said means for biasing said lamination layer injects the current into said lamination layer in substantially parallel relationship therewith.

Claim 14

A light control semiconductor device according to claim 1 wherein said means for biasing said lamination layer injects the current into said lamination layer in substantially vertical relationship therewith.

Claim 15

A light control semiconductor device according to claim 1, further comprising: two mirrors for forming a Fabry-Perot resonator, wherein said composite structure is interposed between said mirrors and optical absorption and optical path length between said mirrors change in response to the injection current.

Claim 16

An arrangement for control of light comprising a plurality of devices according to claim 1, wherein said devices are arranged in matrix.

Claim 17

An arrangement for control of light, comprising: a light source; a semiconductor device for modulating incident light from said light source including: a lamination layer composed of a plurality of semiconductor thin films having different compositions laminated alternately and said lamination layer is characterized by a corresponding optical absorption and a corresponding refractive index, means for biasing said lamination layer in a forward direction so as to inject current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer may be changed by said injected current, said means including two semiconductor layers, wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer, and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled; and an optical system for focusing the light from said light source as modulated by said semiconductor device.

Claim 18

An arrangement for control of light, comprising: a light source; a semiconductor device for modulating incident light from said light source including: a lamination layer composed of a plurality of semiconductor thin films having different compositions laminated alternately and said lamination layer is characterized by a corresponding optical absorption and a corresponding refractive index, means for biasing said lamination layer in a forward direction so as to inject current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer may be changed by said injected current, said means including two semiconductor layers, wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer, and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled; and an optical system for focusing the light from said light source as modulated by said semiconductor device.

Claim 19

An arrangement for control of light according to claim 16, wherein said composite structure is interposed between mirrors and said corresponding optical absorption and optical path length between said mirrors change in response to said injected current.

Claim 20

An arrangement for control of light according to claim 17, wherein said means for biasing said lamination layer includes one of said two semiconductor layers being a p-type doped semiconductor layer and the other of said two semiconductor layers being an n-type doped semiconductor layer and said lamination layer is interposed between said p-type doped and n-type doped semiconductor layers.

Claim 21

An arrangement for control of light according to claim 17, wherein said means for biasing said lamination layer includes said two semiconductor layers both being n-type doped semiconductor layers and said lamination layer is interposed between said two n-type doped semiconductor layers.

Claim 22

An arrangement for control of light according to claim 17, wherein said means for biasing said lamination layer includes said two semiconductor layers both being p-type doped semiconductor layers and said lamination layer is interposed between said two p-type doped semiconductor layers.

Claim 23

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for biasing said lamination layer in the forward direction so as to inject current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer may be changed by said injected current, said means including two semiconductor layers; and wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer.

Claim 24

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for biasing said lamination layer in the forward direction so as to inject current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer may be changed by said injected current, said means including two semiconductor layers; and wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer.

Claim 25

A semiconductor device according to claim 21, wherein said means for biasing said lamination layer in the forward direction includes on/off control means, such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum.

Claim 26

A semiconductor device according to claim 21, wherein the lamination layer includes excitons absorbing the light when current is not injected to flow through the lamination layer, the excitons disappearing when current is injected to flow through the lamination layer such that absorption of light in the lamination layer when the current is injected is at a minimum.

Claim 27

A semiconductor device according to claim 23, wherein said lamination layer is a multi-quantum well structure.

Claim 28

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum; wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer; and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled.

Claim 29

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum; wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer; and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled.

Claim 30

A semiconductor device according to claim 25, wherein the lamination layer includes excitons absorbing the light when current is not injected to flow through the lamination layer, the excitons disappearing when current is injected to flow through the lamination layer such that absorption of light in the lamination layer when the current is injected is at a minimum.

Claim 31

A semiconductor device according to claim 26, wherein said lamination layer is a multi-quantum well structure.

Claim 32

An arrangement for control of light, comprising: a light source; a semiconductor device for modulating incident light from said light source, including: a lamination layer composed of a plurality of semiconductor thin films having different compositions laminated alternately and said lamination layer is characterized by a corresponding optical absorption and a corresponding refractive index, and means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum, wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer, and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled; and an optical system for focusing the light from said light source as modulated by said semiconductor device.

Claim 33

An arrangement for control of light, comprising: a light source; a semiconductor device for modulating incident light from said light source, including: a lamination layer composed of a plurality of semiconductor thin films having different compositions laminated alternately and said lamination layer is characterized by a corresponding optical absorption and a corresponding refractive index, and means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum, wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer, and wherein the material of said two semiconductor layers is such that a product of the corresponding thickness and corresponding refractive index is substantially equal to an odd multiple of 1/4 of the wavelength of light to be controlled; and an optical system for focusing the light from said light source as modulated by said semiconductor device.

Claim 34

An arrangement for control of light according to claim 28, wherein the lamination layer includes excitons absorbing the light when current is not injected to flow through the lamination layer, the excitons disappearing when current is injected to flow through the lamination layer such that absorption of light in the lamination layer when the current is injected is at a minimum.

Claim 35

An arrangement for control of light according to claim 29, wherein said lamination layer is a multi-quantum well structure.

Claim 36

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum; and wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer.

Claim 37

A semiconductor device for control of light comprising: a lamination layer in which a plurality of semiconductor thin films having different compositions are laminated alternately, said lamination layer being characterized by a corresponding optical absorption and a corresponding refractive index; means for injecting current to flow through said lamination layer so said corresponding optical absorption and said corresponding refractive index of said lamination layer are changed by said injected current, said means including two semiconductor layers, the means for injecting including on/off control means such that when current is injected to flow through the lamination layer transmission of the light is at a maximum and when current is not injected to flow through the lamination layer transmission of the light is at a minimum; and wherein said lamination layer is interposed between said two semiconductor layers and is in contact with said two semiconductor layers thereby effecting a composite structure, said two semiconductor layers being made of a material having a band gap which is wider than that of said lamination layer.

Claim 38

A semiconductor device according to claim 31, wherein the lamination layer includes excitons absorbing the light when current is not injected to flow through the lamination layer, the excitons disappearing when current is injected to flow through the lamination layer such that absorption of light in the lamination layer when the current is injected is at a minimum.

Claim 39

A semiconductor device according to claim 32, wherein said lamination layer is a multi-quantum well structure.