US4755860A
Expired / Lapsed
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Avalanche photodetector
Assignee: Nokia Bell Labs
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Filing: 1986-08-05
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Granted: 1988-07-05
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Expires: 2006-08-05
Abstract
Abstract An avalanche photodetector using a quantum well superlattice in which impact ionization of carriers in the well layers occurs across the band-edge discontinuity is described.
Inventors
- 👤 Jeremy Allam
- 👤 Federico Capasso
- 👤 Alfred Y. Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:56
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
An avalanche photodetector comprising first and second cladding layers and disposed therebetween a superlattice comprising interleaved layers having first and second semiconductor compositions and first and second bandgaps, respectively, said first bandgap being less than said second bandgap; first and second electrical contacts to said first and second cladding layers, respectively; a source of carriers in said layer having said first bandgap; and means for biasing small enough so that there is no tunneling or thermionic emission of carriers from said layers having said first bandgap and large enough so that carriers impact ionize carriers in said layers having said first bandgap.
Claim 2
Dependent Claim
102 words
An avalanche photodetector comprising first and second cladding layers and disposed therebetween a superlattice comprising interleaved layers having first and second semiconductor compositions and first and second bandgaps, respectively, said first bandgap being less than said second bandgap; first and second electrical contacts to said first and second cladding layers, respectively; a source of carriers in said layer having said first bandgap; and means for biasing small enough so that there is no tunneling or thermionic emission of carriers from said layers having said first bandgap and large enough so that carriers impact ionize carriers in said layers having said first bandgap.
Claim 3
Dependent Claim
17 words
A photodetector is recited in claim 1 in which said cladding layers have the same conductivity type.
Claim 4
Dependent Claim
17 words
A photodetector as recited in claim 1 in which said cladding layers have the opposite conductivity type.
Claim 5
Dependent Claim
18 words
A photodetector as recited in claim 1 further comprising a third electrical contact to said first bandgap layers.
Claim 6
Dependent Claim
23 words
A photodetector as recited in claim 1 in which said semiconductors compositions are selected from the group consisting of Group III-V compound semiconductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |