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US5103284A
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Semiconductor with ordered clusters
Assignee: Energy Conversion Devices Inc
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Filing: 1991-02-08
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Granted: 1992-04-07
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Expires: 2011-02-08
Abstract
Abstract A semiconductor body includes ordered clusters of less then 100 angstroms in size and preferably, no more than 12 to 30 angstroms in size. The material is characterized by a decoupling of physical properties of the material from the morphology of the material.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Rosa Young
- 👤 Wolodymyr Czubatyj
- 👤 Xunming Deng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:19
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/50; H10D62/53
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
113 words
A semiconductor body in the ordered cluster state, comprising a plurality of ordered clusters of a semiconductor material disposed in electrical communication in the bulk of said body, said ordered clusters having a diameter in the range of 12 to 30 Angstroms and being present in a sufficient number to confer upon said body a pair of physical properties which have values which differ from the values of the same physical properties manifested by a body of the same semiconductor material when it is in a crystalline, polycrystalline, microcrystalline or amorphous state; said pair of physical properties selected from the group consisting of band gap energy, optical absorption coefficient, activation energy and conductivity.
Claim 2
Dependent Claim
113 words
A semiconductor body in the ordered cluster state, comprising a plurality of ordered clusters of a semiconductor material disposed in electrical communication in the bulk of said body, said ordered clusters having a diameter in the range of 12 to 30 Angstroms and being present in a sufficient number to confer upon said body a pair of physical properties which have values which differ from the values of the same physical properties manifested by a body of the same semiconductor material when it is in a crystalline, polycrystalline, microcrystalline or amorphous state; said pair of physical properties selected from the group consisting of band gap energy, optical absorption coefficient, activation energy and conductivity.
Claim 3
Dependent Claim
46 words
A semiconductor body as in claim 1, wherein the K vector thereof is relaxed so that the number of allowed photon-mediated band to band transitions is greater than in the corresponding crystalline material, and the optical absorption coefficient is greater than in the corresponding crystalline material.
Claim 4
Dependent Claim
16 words
A semiconductor body as in claim 1, wherein said ordered clusters are disposed in a matrix.
Claim 5
Dependent Claim
20 words
A semiconductor body as in claim 3, wherein said matrix is of essentially the same composition as said semiconductor material.
Claim 6
Dependent Claim
12 words
A semiconductor body as in claim 3, wherein said matrix is amorphous.
Claim 7
Dependent Claim
13 words
A semiconductor body as in claim 1, wherein said semiconductor material comprises silicon.
Claim 8
Dependent Claim
14 words
A semiconductor body as in claim 6, wherein said semiconductor material further includes hydrogen.
Claim 9
Dependent Claim
14 words
A semiconductor body as in claim 6, wherein said semiconductor material further includes fluorine.
Claim 10
Dependent Claim
15 words
A semiconductor body as in claim 1, wherein said semiconductor material further includes a dopant.
Claim 11
Dependent Claim
34 words
A semiconductor body as in claim 1, wherein said semiconductor material is a silicon based material, said semiconductor body having an approximate direct band gap and a band gap energy of approximately 1.0-1.5 eV.
Claim 12
Dependent Claim
16 words
A semiconductor body as in claim 1, wherein said semiconductor material is a germanium based material.
Claim 13
Dependent Claim
15 words
A semiconductor body as in claim 11, wherein said semiconductor material further includes hydrogen therein.
Claim 14
Dependent Claim
15 words
A semiconductor body as in claim 11, wherein said semiconductor material further includes fluorine therein.
Claim 15
Dependent Claim
16 words
A semiconductor body as in claim 11, wherein said semiconductor material further includes a dopant therein.
Claim 16
Dependent Claim
16 words
A semiconductor body as in claim 1, wherein said semiconductor material is a silicon/germanium alloy material.
Claim 17
Dependent Claim
13 words
A semiconductor body as in claim 1, wherein said ordered clusters include fluorine.
Claim 18
Dependent Claim
39 words
A semiconductor body as in claim 16, wherein said fluorine is present at least at the surfaces of said ordered clusters, whereby said semiconductor body is characterized by a reduction in interfacial states compared to a fluorine-free semiconductor body.
Claim 19
Dependent Claim
51 words
A semiconductor body as in claim 1, said body including a plurality of ordered clusters of a fluorinated silicon alloy material disposed in electrical communication in the bulk of the semiconductor body, said body having an approximate direct band gap and a band gap energy of no more than 1.5 eV.
References Cited (Backward Citations)
US4496788A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |