Patent US5103269A successfully refreshed from Google Patents.
US5103269A
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US
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Electroluminescent device of compound semiconductor comprising zns or zns and znse
Assignee: Sharp Corp
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Filing: 1990-07-09
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Granted: 1992-04-07
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Expires: 2010-07-09
Abstract
Abstract An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer.
Inventors
- 👤 Yoshitaka Tomomura
- 👤 Masahiko Kitagawa
- 👤 Kenji Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/01; H10H20/011; H10H20/012; H10H20/052; H10H20/81; H10H20/822; H10H20/823; H10H20/8232
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
92 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer.
Claim 2
Dependent Claim
92 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer.
Claim 3
Dependent Claim
124 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial interlayer having a composition continuously or stepwise varying a composition ratio of ZnS to ZnSe in the direction of from the single crystal substrate to the p-n junction-type epitaxial layer.
Claim 4
Dependent Claim
124 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial interlayer having a composition continuously or stepwise varying a composition ratio of ZnS to ZnSe in the direction of from the single crystal substrate to the p-n junction-type epitaxial layer.
Claim 5
Dependent Claim
41 words
The device of claim 2 in which the epitaxial interlayer has a composition same as or similar to that of the single crystal substrate and the p-n junction-type epitaxial layer, in the vicinity of the substrate and the epitaxial layer, respectively.
Claim 6
Dependent Claim
99 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial layer being a super-lattice layer.
Claim 7
Dependent Claim
99 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial layer being a super-lattice layer.
Claim 8
Dependent Claim
103 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer mode of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial interlayer having a thickness of 0.1 to 1 micron.
Claim 9
Dependent Claim
103 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer mode of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said epitaxial interlayer having a thickness of 0.1 to 1 micron.
Claim 10
Dependent Claim
118 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said single crystal substrate having a S content of 30 to 100 atm. % on the total of S plus Se of being 100 atm %.
Claim 11
Dependent Claim
118 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said single crystal substrate having a S content of 30 to 100 atm. % on the total of S plus Se of being 100 atm %.
Claim 12
Dependent Claim
108 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said p-n junction-type epitaxial layer being composed of a n-type epitaxial layer and a p-type epitaxial layer.
Claim 13
Dependent Claim
108 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, said p-n junction-type epitaxial layer being composed of a n-type epitaxial layer and a p-type epitaxial layer.
Claim 14
Dependent Claim
110 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, at least one low-resistance epitaxial conductive layer being disposed between the single crystal substrate and the epitaxial interlayer.
Claim 15
Dependent Claim
110 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, at least one low-resistance epitaxial conductive layer being disposed between the single crystal substrate and the epitaxial interlayer.
Claim 16
Dependent Claim
33 words
The device of claim 8 in which a negative electrode is formed as being connected to the low-resistance epitaxial conductive layer while a positive electrode is formed on the p-n junction-type epitaxial layer.
Claim 17
Dependent Claim
109 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, a super-lattice layer and a low-resistivity epitaxial conductive layer being laminated over the p-n junction-type epitaxial layer.
Claim 18
Dependent Claim
109 words
An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate, the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer, a super-lattice layer and a low-resistivity epitaxial conductive layer being laminated over the p-n junction-type epitaxial layer.
Claim 19
Dependent Claim
18 words
A device as in claim 1 wherein said substrate has a higher S content than said epitaxial layer.
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