Patent US5100830A successfully refreshed from Google Patents.
US5100830A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-02-16
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Granted: 1992-03-31
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Expires: 2010-02-16
Abstract
Abstract In a method for manufacturing a semiconductor device using a LOCOS technique, a selective oxidation is performed using an oxidation-resistance film as a mask to form an element isolating oxide film on the semiconductor substrate. An inserting portion of the oxide film is formed under an end portion of the oxidation-resistance film. The feature of this method lies in that the inserting portion of the oxide film is left as an element isolating oxide film and the other portion thereof is removed to selectively expose the substrate, and then a monocrystalline silicon layer is formed on the exposed portion of the substrate and used as an element region.
Inventors
- 👤 Shigeru Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:46
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/0127; H10W10/018; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
249 words
A method of manufacturing a semiconductor device, comprising the steps of: forming on a surface of a semiconductor substrate a surface-protecting film of silicon oxide for protecting the surface of the semiconductor substrate; forming on said surface-protecting film an oxidation-resistance film of silicon nitride for preventing oxidation of said semiconductor substrate; selectively removing a portion of said oxidation-resistance film by photoetching to leave remaining portions thereof having a predetermined pattern; doping conductivity inversion preventing impurities into said semiconductor substrate, using the remaining portions of said oxidation-resistance film having said predetermined pattern as a mask; forming an element isolating oxide film on said semiconductor substrate so that ann inserting portion of said element isolating oxide film is formed under an end portion of said remaining portions of said oxidation-resistance film, by a selective oxidation technique using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; removing a portion other than said inserting portion of said element isolating oxide film by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask, thereby selectively exposing said semiconductor substrate; forming at least one monocrystalline silicon layer on the exposed portion of said semiconductor substrate; removing said remaining portions of said oxidation-resistance film having a predetermined pattern and a portion of said surface-protecting film too selectively expose a portion of said semiconductor substrate; and forming semiconductor device elements in said monocrystalline silicon layer and in the exposed portion of said semiconductor substrate.
Claim 2
Independent Claim
249 words
A method of manufacturing a semiconductor device, comprising the steps of: forming on a surface of a semiconductor substrate a surface-protecting film of silicon oxide for protecting the surface of the semiconductor substrate; forming on said surface-protecting film an oxidation-resistance film of silicon nitride for preventing oxidation of said semiconductor substrate; selectively removing a portion of said oxidation-resistance film by photoetching to leave remaining portions thereof having a predetermined pattern; doping conductivity inversion preventing impurities into said semiconductor substrate, using the remaining portions of said oxidation-resistance film having said predetermined pattern as a mask; forming an element isolating oxide film on said semiconductor substrate so that ann inserting portion of said element isolating oxide film is formed under an end portion of said remaining portions of said oxidation-resistance film, by a selective oxidation technique using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; removing a portion other than said inserting portion of said element isolating oxide film by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask, thereby selectively exposing said semiconductor substrate; forming at least one monocrystalline silicon layer on the exposed portion of said semiconductor substrate; removing said remaining portions of said oxidation-resistance film having a predetermined pattern and a portion of said surface-protecting film too selectively expose a portion of said semiconductor substrate; and forming semiconductor device elements in said monocrystalline silicon layer and in the exposed portion of said semiconductor substrate.
Claim 3
Dependent Claim
22 words
The method according to claim 1, wherein said monocrystalline silicon layer has the same conductivity type as that of said semiconductor substrate.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said monocrystalline silicon layer has a different conductivity type from that of said semiconductor substrate.
Claim 5
Dependent Claim
41 words
The method according to claim 1, wherein a plurality of monocrystalline silicon layers are formed with at least one thereof having the same conductivity type and at least one thereof having a different conductivity type from that of said semiconductor substrate.
Claim 6
Dependent Claim
18 words
The method according to claim 1, wherein said monocrystalline silicon layer is formed by an epitaxial growth technique.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said semiconductor substrate is a silicon substrate.
Claim 8
Dependent Claim
40 words
The method according to claim 6, wherein the thickness of said surface-protecting film is about 150 nm, the thickness of said oxidation-resistance film is about 250 nm, and the thickness of said element isolating insulation film is about 800 nm.
Claim 9
Independent Claim
287 words
A method of manufacturing a semiconductor device, comprising the steps of: forming on a surface of a semiconductor substrate a surface-protecting film of silicon oxide for protecting the surface of the semiconductor substrate; forming on the surface-protecting film an oxidation-resistance film of silicon nitride for preventing oxidation of said semiconductor substrate; selectively removing a portion of said oxidation-resistance film by photoetching to leave remaining portions thereof having a predetermined pattern; doping conductivity inversion preventing impurities into said semiconductor substrate, using the remaining portions of said oxidation-resistance film having said predetermined pattern as a mask; forming an element isolating oxide film on said semiconductor substrate so that an inserting portion of said element isolating oxide film is formed under ann end portion of said remaining portions of said oxidation-resistance film, by a selective oxidation technique using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; removing a portion other than said inserting portion of said element isolating oxide film by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask, thereby selectively exposing said semiconductor substrate; selectively removing a portion of a layer of the semiconductor substrate into which said conductivity inversion preventing impurities are doped, by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; forming at least one monocrystalline silicon layer on the exposed portion of said semiconductor substrate; removing said remaining portions of said oxidation-resistance film having a predetermined pattern and a portion of said surface-protecting film to selectively expose a portion of said semiconductor substrate; and forming semiconductor device elements in said monocrystalline silicon layer and in the exposed portion of said semiconductor substrate.
Claim 10
Independent Claim
287 words
A method of manufacturing a semiconductor device, comprising the steps of: forming on a surface of a semiconductor substrate a surface-protecting film of silicon oxide for protecting the surface of the semiconductor substrate; forming on the surface-protecting film an oxidation-resistance film of silicon nitride for preventing oxidation of said semiconductor substrate; selectively removing a portion of said oxidation-resistance film by photoetching to leave remaining portions thereof having a predetermined pattern; doping conductivity inversion preventing impurities into said semiconductor substrate, using the remaining portions of said oxidation-resistance film having said predetermined pattern as a mask; forming an element isolating oxide film on said semiconductor substrate so that an inserting portion of said element isolating oxide film is formed under ann end portion of said remaining portions of said oxidation-resistance film, by a selective oxidation technique using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; removing a portion other than said inserting portion of said element isolating oxide film by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask, thereby selectively exposing said semiconductor substrate; selectively removing a portion of a layer of the semiconductor substrate into which said conductivity inversion preventing impurities are doped, by anisotropic etching using said remaining portions of said oxidation-resistance film having a predetermined pattern as a mask; forming at least one monocrystalline silicon layer on the exposed portion of said semiconductor substrate; removing said remaining portions of said oxidation-resistance film having a predetermined pattern and a portion of said surface-protecting film to selectively expose a portion of said semiconductor substrate; and forming semiconductor device elements in said monocrystalline silicon layer and in the exposed portion of said semiconductor substrate.
Claim 11
Dependent Claim
22 words
The method according to claim 8, wherein said monocrystalline silicon layer has the same conductivity type as that of said semiconductor substrate.
Claim 12
Dependent Claim
22 words
The method according to claim 8, wherein said monocrystalline silicon layer has a different conductivity type from that of said semiconductor substrate.
Claim 13
Dependent Claim
41 words
The method according to claim 8, wherein a plurality of monocrystalline silicon layers are formed with at least one thereof having the same conductivity type and at least one thereof having a different conductivity type from that of said semiconductor substrate.
Claim 14
Dependent Claim
18 words
The method according to claim 8, wherein said monocrystalline silicon layer is formed by an epitaxial growth technique.
Claim 15
Dependent Claim
14 words
The method according to claim 8, wherein said semiconductor substrate is a silicon substrate.
Claim 16
Dependent Claim
39 words
The method according to claim 13, wherein the thickness of said surface-protecting film is about 1/8nm, the thickness of said oxidation-resistance film is about 250 nm, and the thickness of said element isolating insulation film is about 800 nm.
References Cited (Backward Citations)
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Cited
US4948748A
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US4746625A
Cited
GB2198882A
Cited
US4948751A
Cited
US4948456A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |