US4948456A
Expired / Lapsed
US
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Confined lateral selective epitaxial growth
Assignee: Delco Electronics LLC
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Filing: 1989-06-09
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Granted: 1990-08-14
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Expires: 2009-06-09
Abstract
Abstract A method is disclosed for forming laterally grown epitaxial silicon without the requirement for subsequent thinning or planarization of the epitaxial silicon. Generally a low, wide cavity consisting of walls of dielectric material and having a side opening, or via hole, is formed and the epitaxial silicon is then selectively grown within the cavity. The resulting epitaxial silicon structure is characterized by being flat and wide with an aspect ratio of approximately 6 to 1.
Inventors
- 👤 Peter J. Schubert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B25/00; C30B25/02; C30B25/04; H10P14/27; H10P14/271; H10P14/276; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W10/021; H10W10/061; H10W10/181; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/026
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
205 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate; forming a first layer of dielectric material on a surface of said substrate; patterning said first layer of dielectric material so as to provide a seed hole in said layer of dielectric material wherein said underlying single crystal silicon is exposed; forming a layer of a sacrificial material upon said patterned first layer of dielectric material and within said seed hole; forming a second layer of dielectric material over and around said layer of sacrificial material so that said first and second layers of dielectric material substantially surround said layer of sacrificial material yet a portion of said underlying sacrificial material is exposed; removing said layer of sacrificial material so as to form a cavity having walls defined by said first and second layers of dielectric material and so as to expose said single crystal silicon substrate within said seed hole, said cavity being characterized by an aspect ratio no greater than about 8 to 1 for a height of said cavity no greater than about 1 micron; and selectively growing epitaxial silicon from said single crystal silicon substrate through said seed hole and within said cavity.
Claim 2
Independent Claim
205 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate; forming a first layer of dielectric material on a surface of said substrate; patterning said first layer of dielectric material so as to provide a seed hole in said layer of dielectric material wherein said underlying single crystal silicon is exposed; forming a layer of a sacrificial material upon said patterned first layer of dielectric material and within said seed hole; forming a second layer of dielectric material over and around said layer of sacrificial material so that said first and second layers of dielectric material substantially surround said layer of sacrificial material yet a portion of said underlying sacrificial material is exposed; removing said layer of sacrificial material so as to form a cavity having walls defined by said first and second layers of dielectric material and so as to expose said single crystal silicon substrate within said seed hole, said cavity being characterized by an aspect ratio no greater than about 8 to 1 for a height of said cavity no greater than about 1 micron; and selectively growing epitaxial silicon from said single crystal silicon substrate through said seed hole and within said cavity.
Claim 3
Independent Claim
241 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate of appropriate electrical conductivity type; forming a first layer of dielectric material on said surface of said substrate; patterning said first layer of dielectric material so as to provide a seed hole in said layer of dielectric material wherein said underlying single crystal silicon is exposed; forming a layer of a sacrificial material upon said first layer of dielectric material and within said seed hole; forming a second layer of dielectric material over and around said layer of sacrificial material so that said first and second layers of dielectric material substantially surround said layer of sacrificial material; selectively removing a region of said second layer of dielectric material so as to expose said underlying layer of sacrificial material in that region and so that a structure of said second layer of dielectric material remains, said first and second layers of dielectric material substantially surround said layer of sacrificial material; removing said layer of sacrificial material within said structure so as to expose said single crystal silicon substrate within said seed hole; and growing epitaxial silicon from said single crystal silicon substrate through said seed hole within said structure of dielectric material, said epitaxial grown silicon being characterized by an aspect ratio not greater than about 8 to 1 for a height of said epitaxially grown silicon of no greater than about 1 micron.
Claim 4
Independent Claim
241 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate of appropriate electrical conductivity type; forming a first layer of dielectric material on said surface of said substrate; patterning said first layer of dielectric material so as to provide a seed hole in said layer of dielectric material wherein said underlying single crystal silicon is exposed; forming a layer of a sacrificial material upon said first layer of dielectric material and within said seed hole; forming a second layer of dielectric material over and around said layer of sacrificial material so that said first and second layers of dielectric material substantially surround said layer of sacrificial material; selectively removing a region of said second layer of dielectric material so as to expose said underlying layer of sacrificial material in that region and so that a structure of said second layer of dielectric material remains, said first and second layers of dielectric material substantially surround said layer of sacrificial material; removing said layer of sacrificial material within said structure so as to expose said single crystal silicon substrate within said seed hole; and growing epitaxial silicon from said single crystal silicon substrate through said seed hole within said structure of dielectric material, said epitaxial grown silicon being characterized by an aspect ratio not greater than about 8 to 1 for a height of said epitaxially grown silicon of no greater than about 1 micron.
Claim 5
Independent Claim
116 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate; forming a sandwiched structure upon said single crystal silicon substrate, said sandwiched structure comprising top and bottom dielectric layers and an intermediate sacrificial layer; patterning said sandwiched structure to provide a seed hole on said single crystal silicon substrate; growing epitaxial silicon from said single crystal silicon substrate through said seed hole so as to form a mushroom shaped silicon structure; selectively removing portions of said top dielectric layer and said sacrificial layer so as to expose a sidewall of said mushroom shaped silicon structure; and growing epitaxial silicon from said sidewall of said mushroom shaped silicon structure.
Claim 6
Independent Claim
116 words
A method for forming laterally grown epitaxial silicon comprising the following steps: providing a single crystal silicon substrate; forming a sandwiched structure upon said single crystal silicon substrate, said sandwiched structure comprising top and bottom dielectric layers and an intermediate sacrificial layer; patterning said sandwiched structure to provide a seed hole on said single crystal silicon substrate; growing epitaxial silicon from said single crystal silicon substrate through said seed hole so as to form a mushroom shaped silicon structure; selectively removing portions of said top dielectric layer and said sacrificial layer so as to expose a sidewall of said mushroom shaped silicon structure; and growing epitaxial silicon from said sidewall of said mushroom shaped silicon structure.
References Cited (Backward Citations)
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