Patent US5100829A successfully refreshed from Google Patents.
US5100829A
Expired / Lapsed
US
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Process for forming a semiconductor structure with closely coupled substrate temperature sense element
Assignee: Semiconductor Components Industries LLC
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Filing: 1991-03-01
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Granted: 1992-03-31
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Expires: 2011-03-01
Abstract
Abstract MOSFET devices or circuits incorporating an improved substrate temperature sensing element are obtained by forming a PN junction directly on a thin (gate) dielectric region. The temperature sense junction is desirably formed in a poly layer. By mounting it directly on thin (gate) dielectric its thermal response to temperature changes in the substrate is improved while still being electrically isolated from the substrate. It is desirable to provide over-voltage protection elements coupled to the junction to avoid rupture of the underlying thin dielectric. Because the sense diode and all the over-voltage protection devices may be made of poly with junctions perpendicular to the substrate, the structure is particularly compact and simple to fabricate.
Inventors
- 👤 Gary V. Fay
- 👤 Stephen P. Robb
- 👤 Judith L. Sutor
- 👤 Lewis E. Terry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:26
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10D84/00; H10D84/101; H10D84/141; H10D84/143; H10D84/148; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
73 words
A process for forming a semiconductor structure combining active devices with a substrate temperature sensing element, comprising: providing a semiconductor substrate; forming, on the substrate, a dielectric having a first region of a first thickness of about 0.1 microns or less and a second region of a second, larger thickness; and forming on the first region a semiconductor PN junction electrically isolated from but thermally coupled to the substrate through the first region.
Claim 2
Dependent Claim
73 words
A process for forming a semiconductor structure combining active devices with a substrate temperature sensing element, comprising: providing a semiconductor substrate; forming, on the substrate, a dielectric having a first region of a first thickness of about 0.1 microns or less and a second region of a second, larger thickness; and forming on the first region a semiconductor PN junction electrically isolated from but thermally coupled to the substrate through the first region.
Claim 3
Dependent Claim
21 words
The process of claim 1 further comprising forming an over-voltage protection device electrically coupled between the PN junction and the substrate.
Claim 4
Dependent Claim
20 words
The process of claim 1 further comprising forming another PN junction coupled across the PN junction and in opposition thereto.
Claim 5
Dependent Claim
27 words
The process of claim 3 wherein the step of forming the PN junction comprises oppositely doping adjacent portions of a polycrystalline semiconductor layer over the first region.
Claim 6
Dependent Claim
30 words
The process of claim 2 wherein the step of forming the over-voltage protection device comprises forming at least two back-to-back PN junctions in a polycrystalline semiconductor on the second region.
Claim 7
Dependent Claim
32 words
The process of claim 1 wherein the step of forming a PN junction comprises forming a PN junction that is substantially at right angles to the dielectric surface in the first region.
Claim 8
Dependent Claim
19 words
The process of claim 1 further comprising coupling the PN junction to a gate electrode of an active device.
Claim 9
Dependent Claim
121 words
A process for forming a semiconductor structure employing active insulated gate field effect devices separated by an inactive field region, comprising: providing a substrate having a semiconductor surface; providing a dielectric layer on the semiconductor surface, wherein the dielectric layer has a first region of a first thickness of about 0.1 micrometers or less and is suitable for a gate dielectric for the active field effect devices and a second region of a second, larger, thickness suitable for the field region; providing a semiconductor PN junction located on the first region and thermally coupled to the semiconductor surface therethrough; and providing over-voltage protection means coupled to one side of the semiconductor PN junction for preventing electrical breakdown of the first region.
Claim 10
Dependent Claim
121 words
A process for forming a semiconductor structure employing active insulated gate field effect devices separated by an inactive field region, comprising: providing a substrate having a semiconductor surface; providing a dielectric layer on the semiconductor surface, wherein the dielectric layer has a first region of a first thickness of about 0.1 micrometers or less and is suitable for a gate dielectric for the active field effect devices and a second region of a second, larger, thickness suitable for the field region; providing a semiconductor PN junction located on the first region and thermally coupled to the semiconductor surface therethrough; and providing over-voltage protection means coupled to one side of the semiconductor PN junction for preventing electrical breakdown of the first region.
Claim 11
Dependent Claim
20 words
The process of claim 8 further comprising providing a further rectifying junction coupled across the PN junction in opposition thereto.
Claim 12
Dependent Claim
33 words
The process of claim 9 wherein the step of providing a further rectifying junction comprises providing a PN junction device having a breakdown voltage less than a rupture voltage of the first region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |