US5099309A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Three-dimensional memory card structure with internal direct chip attachment
Assignee: International Business Machines Corp
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Filing: 1990-04-30
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Granted: 1992-03-24
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Expires: 2010-04-30
Abstract
Abstract A memory card structure is disclosed containing an embedded three dimensional array of semiconductor memory chips. The card structure includes at least one memory core and at least one power core which are joined together in an overlapping relationship. Each memory core comprises a copper-invar-copper thermal conductor plane having a two dimensional array of chip well locations on each side of the plane. Polytetrafluoroethylene covers the major surfaces of the thermal conductor plane except at the bottoms of the chip wells. Memory chips are placed in the chip wells and are covered by insulating and wiring levels. Each power core comprises at least one copper-invar-copper electrical conductor plane and polytetrafluoroethylene covering the major surfaces of the electrical conductor plane. Provision is made for providing electrical connection pathways and cooling pathways along vertical as well as horizontal planes internal to the card structure.
Inventors
- 👤 Bohdan R. Kryzaniwsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:01
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/06; H; H10; H10W; H10W72/00; H10W72/01; H10W72/0198; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
183 words
A card structure having an internal three dimensional array of semiconductor chips, said card structure including: at least one first core; at least one power core; one of said first cores lying on and joined to said power core; each said first core comprising: a thermal conductor plane having a two dimensional array of chip well locations one each side of said plane, and a first complaint dielectric material on the major surfaces of said plane except at the bottoms of said wells, said first material having a low dielectric constant and having a thermal coefficient of expansion compatible with those of said chips and said thermal conductor plane, whereby thermal expansion stability with said chips and said thermal conductor plane is maintained; each said power core comprising: at least one electrical conductor plane, and a second compliant dielectric material on the major surfaces of said plane, said second material having a thermal coefficient of expansion compatible with said electrical conductor plane, whereby thermal expansion stability with said electrical conductor plane is maintained; and said semiconductor chips in respective ones of said wells.
Claim 2
Dependent Claim
183 words
A card structure having an internal three dimensional array of semiconductor chips, said card structure including: at least one first core; at least one power core; one of said first cores lying on and joined to said power core; each said first core comprising: a thermal conductor plane having a two dimensional array of chip well locations one each side of said plane, and a first complaint dielectric material on the major surfaces of said plane except at the bottoms of said wells, said first material having a low dielectric constant and having a thermal coefficient of expansion compatible with those of said chips and said thermal conductor plane, whereby thermal expansion stability with said chips and said thermal conductor plane is maintained; each said power core comprising: at least one electrical conductor plane, and a second compliant dielectric material on the major surfaces of said plane, said second material having a thermal coefficient of expansion compatible with said electrical conductor plane, whereby thermal expansion stability with said electrical conductor plane is maintained; and said semiconductor chips in respective ones of said wells.
Claim 3
Dependent Claim
15 words
The card structure defined in claim 1 wherein each said chip is a memory chip.
Claim 4
Dependent Claim
24 words
The card structure defined in claim 1 wherein said thermal conductor plane and said electrical conductor plane are made of the same conductor material.
Claim 5
Dependent Claim
14 words
The card structure defined in claim 3 wherein said same conductor material is copper-invar-copper.
Claim 6
Dependent Claim
20 words
The card structure defined in claim 1 wherein said first and said second dielectric materials are the same dielectric material.
Claim 7
Dependent Claim
14 words
The card structure defined in claim 5 wherein said same dielectric material is polytetrafluoroethylene.
Claim 8
Dependent Claim
43 words
The card structure defined in claim 1 and further including a plurality of cooling vias, each said via penetrating through said first core and said power core at locations between said wells, each said via containing material thermally contacting said thermal conductor plane.
Claim 9
Dependent Claim
57 words
The card structure defined in claim 1 and further including a plurality of aligned conductive vias, each said via penetrating through said first core and said power core at corresponding locations between at said wells, the facing ends of said vias at corresponding locations being joined together, and each said via being insulated from said conductor plane.
Claim 10
Dependent Claim
34 words
The card structure defined in claim 8 wherein said facing ends of said conductive vias are joined together by metallic dendrite pads, each pad being fixed to a respective facing end of said vias.
Claim 11
Dependent Claim
24 words
The card structure defined in claim 1 wherein said thermal conductor plane is shaped so as to surround the sides of each said chip.
Claim 12
Dependent Claim
14 words
The card structure defined in claim 10 wherein said thermal conductor plane comprises molybdenum.
Claim 13
Dependent Claim
37 words
The card structure defined in claim 1 wherein each said chip is a memory chip, said thermal conductor plane and said electrical conductor plane are comprised of copper-invar-copper, and said first and said second dielectric materials polytetrafluoroethylene.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |