Patent US5098192A successfully refreshed from Google Patents.
US5098192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
DRAM with improved poly-to-poly capacitor
Assignee: Texas Instruments Inc
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Filing: 1991-02-27
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Granted: 1992-03-24
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Expires: 2011-02-27
Abstract
Abstract The present invention teaches a new method for fabrication of DRAM cells having an upper capacitor plate over the polysilicon storage gate. To provide a very high specific capacitance and very good integrity between the first polysilicon storage gate and the (second or third polysilicon) upper capacitor plate, the dielectric is formed as an oxide/nitride composite which is then reoxidized. This provides the advantages of high dielectric integrity, high specific capacitance, uniformity and reproducibility.
Inventors
- 👤 Donald J. Coleman
- 👤 Roger A. Haken
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:41
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
185 words
An integrated circuit including an array of memory cells, comprising: (a) a substrate; (b) a field oxide disposed on said substrate defining said array of memory cells; (c) each memory cell of said array having: (i) a pair of spaced implanted regions disposed in said substrate; (ii) a gate electrode spaced from said substrate and disposed between said implanted regions; (iii) a first capacitor electrode on said substrate contacting one of said implanted regions and extending over and spaced from said gate electrode and extending over a portion of said field oxide, said first capacitor electrode having a perimeter contained within said cell, and (d) a second capacitor electrode disposed over and spaced from said first capacitor electrode, said second capacitor electrode extending over and beyond a major portion of said perimeter of said first capacitor electrode, said second capacitor electrode having a slot having sides, said sides vertically aligned with a minor portion of said perimeter of said first capacitor electrode and disposed adjacent the other of said implanted regions, said second capacitor electrode extending over said field oxide beyond said first capacitor electrode.
Claim 2
Dependent Claim
185 words
An integrated circuit including an array of memory cells, comprising: (a) a substrate; (b) a field oxide disposed on said substrate defining said array of memory cells; (c) each memory cell of said array having: (i) a pair of spaced implanted regions disposed in said substrate; (ii) a gate electrode spaced from said substrate and disposed between said implanted regions; (iii) a first capacitor electrode on said substrate contacting one of said implanted regions and extending over and spaced from said gate electrode and extending over a portion of said field oxide, said first capacitor electrode having a perimeter contained within said cell, and (d) a second capacitor electrode disposed over and spaced from said first capacitor electrode, said second capacitor electrode extending over and beyond a major portion of said perimeter of said first capacitor electrode, said second capacitor electrode having a slot having sides, said sides vertically aligned with a minor portion of said perimeter of said first capacitor electrode and disposed adjacent the other of said implanted regions, said second capacitor electrode extending over said field oxide beyond said first capacitor electrode.
Claim 3
Dependent Claim
22 words
The circuit of claim 1 further including a contact disposed in said slot and contacting the other of said spaced implanted regions.
Claim 4
Dependent Claim
18 words
The circuit of claim 1 further wherein two of the memory cells of said array share said slot.
Claim 5
Dependent Claim
18 words
The circuit of claim 2 further wherein two of the memory cells of said array share said slot.
Claim 6
Dependent Claim
20 words
The circuit of claim 1 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 7
Dependent Claim
20 words
The circuit of claim 2 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 8
Dependent Claim
20 words
The circuit of claim 3 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 9
Dependent Claim
20 words
The circuit of claim 4 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 10
Dependent Claim
18 words
The circuit of claim 1 wherein a portion of the side of said slot contacts said gate electrode.
Claim 11
Dependent Claim
18 words
The circuit of claim 2 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 12
Dependent Claim
18 words
The circuit of claim 3 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 13
Dependent Claim
18 words
The circuit of claim 4 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 14
Dependent Claim
18 words
The circuit of claim 5 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 15
Dependent Claim
18 words
The circuit of claim 6 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 16
Dependent Claim
18 words
The circuit of claim 7 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 17
Dependent Claim
18 words
The circuit of claim 8 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 18
Dependent Claim
38 words
The circuit of claim 1 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 19
Dependent Claim
38 words
The circuit of claim 2 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 20
Dependent Claim
38 words
The circuit of claim 3 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 21
Dependent Claim
38 words
The circuit of claim 4 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 22
Dependent Claim
38 words
The circuit of claim 5 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 23
Dependent Claim
38 words
The circuit of claim 6 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 24
Dependent Claim
38 words
The circuit of claim 7 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 25
Dependent Claim
38 words
The circuit of claim 8 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 26
Dependent Claim
38 words
The circuit of claim 9 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 27
Dependent Claim
38 words
The circuit of claim 10 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 28
Dependent Claim
38 words
The circuit of claim 11 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 29
Dependent Claim
38 words
The circuit of claim 12 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 30
Dependent Claim
38 words
The circuit of claim 13 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 31
Dependent Claim
38 words
The circuit of claim 14 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 32
Dependent Claim
38 words
The circuit of claim 15 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 33
Dependent Claim
38 words
The circuit of claim 16 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 34
Dependent Claim
185 words
An integrated circuit including an array of memory cells, comprising: (a) a substrate; (b) a field oxide disposed on said substrate defining said array of memory cells; (c) each memory cell of said array having: (i) a pair of spaced implanted regions disposed in said substrate; (ii) a gate electrode spaced from said substrate; (iii) a first capacitor electrode on said substrate contacting one of said implanted regions and extending over and spaced from said gate electrode and extending over a portion of said field oxide, said first capacitor electrode having a perimeter contained within said cell, and (d) a second capacitor electrode disposed over and spaced from said first capacitor electrode, said second capacitor electrode extending over and beyond a major portion of said perimeter of said first capacitor electrode, said second capacitor electrode having a slot having sides, said sides vertically aligned with a minor portion of said perimeter of said first capacitor electrode and disposed adjacent the other of said implanted regions, said second capacitor electrode extending over said gate electrode and extending over said field oxide beyond said first capacitor electrode.
Claim 35
Dependent Claim
185 words
An integrated circuit including an array of memory cells, comprising: (a) a substrate; (b) a field oxide disposed on said substrate defining said array of memory cells; (c) each memory cell of said array having: (i) a pair of spaced implanted regions disposed in said substrate; (ii) a gate electrode spaced from said substrate; (iii) a first capacitor electrode on said substrate contacting one of said implanted regions and extending over and spaced from said gate electrode and extending over a portion of said field oxide, said first capacitor electrode having a perimeter contained within said cell, and (d) a second capacitor electrode disposed over and spaced from said first capacitor electrode, said second capacitor electrode extending over and beyond a major portion of said perimeter of said first capacitor electrode, said second capacitor electrode having a slot having sides, said sides vertically aligned with a minor portion of said perimeter of said first capacitor electrode and disposed adjacent the other of said implanted regions, said second capacitor electrode extending over said gate electrode and extending over said field oxide beyond said first capacitor electrode.
Claim 36
Dependent Claim
22 words
The circuit of claim 33 further including a contact disposed in said slot and contacting the other of said spaced implanted regions.
Claim 37
Dependent Claim
18 words
The circuit of claim 33 further wherein two of the memory cells of said array share said slot.
Claim 38
Dependent Claim
18 words
The circuit of claim 34 further wherein two of the memory cells of said array share said slot.
Claim 39
Dependent Claim
20 words
The circuit of claim 33 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 40
Dependent Claim
20 words
The circuit of claim 34 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 41
Dependent Claim
20 words
The circuit of claim 35 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 42
Dependent Claim
20 words
The circuit of claim 36 wherein a portion of the perimeter of said first capacitor electrode extends to said slot.
Claim 43
Dependent Claim
18 words
The circuit of claim 33 wherein a portion of the side of said slot contacts said gate electrode.
Claim 44
Dependent Claim
18 words
The circuit of claim 34 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 45
Dependent Claim
18 words
The circuit of claim 35 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 46
Dependent Claim
18 words
The circuit of claim 36 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 47
Dependent Claim
18 words
The circuit of claim 37 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 48
Dependent Claim
18 words
The circuit of claim 38 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 49
Dependent Claim
18 words
The circuit of claim 39 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 50
Dependent Claim
18 words
The circuit of claim 40 wherein a portion of the edge of said slot contacts said gate electrode.
Claim 51
Dependent Claim
38 words
The circuit of claim 33 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 52
Dependent Claim
38 words
The circuit of claim 34 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 53
Dependent Claim
38 words
The circuit of claim 35 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 54
Dependent Claim
38 words
The circuit of claim 36 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 55
Dependent Claim
38 words
The circuit of claim 37 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 56
Dependent Claim
38 words
The circuit of claim 38 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 57
Dependent Claim
38 words
The circuit of claim 39 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 58
Dependent Claim
38 words
The circuit of claim 40 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 59
Dependent Claim
38 words
The circuit of claim 41 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 60
Dependent Claim
38 words
The circuit of claim 42 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 61
Dependent Claim
38 words
The circuit of claim 43 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 62
Dependent Claim
38 words
The circuit of claim 44 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 63
Dependent Claim
38 words
The circuit of claim 45 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 64
Dependent Claim
38 words
The circuit of claim 46 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 65
Dependent Claim
38 words
The circuit of claim 47 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
Claim 66
Dependent Claim
38 words
The circuit of claim 48 wherein said second capacitor electrode extends substantially over said array, said gate electrode and said first capacitor electrode and is spaced therefrom and extends over said field oxide beyond said first capacitor electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |