US5097146A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Circuit for detecting high voltage level in mos technology
Assignee: STMicroelectronics SA
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Filing: 1991-02-22
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Granted: 1992-03-17
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Expires: 2011-02-22
Abstract
Abstract A circuit for detecting the high voltage level of a voltage V cc in MOS technology comprises a voltage source made of at least one P-type MOS transistor and one N-type MOS transistor, and delivers an output voltage VA such that: O<VA<VTN if V cc ≦C and VA=Vcc-C+VTN if V cc >C, VTN being the threshold voltage of the N-type transistor and C being a substantially constant voltage. The circuit further comprises means for delivering an output logic level which switches over when the high voltage level of the voltage V cc exceeds a predetermined threshold, said means being connected to the voltage source. The invention can be applied to EPROMs or EEPROMs.
Inventors
- 👤 Jacek Kowalski
- 👤 Christophe Chevallier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:16
CPC Classifications
G; G01; G01R; G01R19/00; G01R19/165; G01R19/16533; G01R19/16557; G01R19/16504; G01R19/16519
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
124 words
A device for detecting a high threshold voltage of a supply voltage in a circuit constructed by MOS technology on a substrate, said device comprising, between a supply connection which receives said supply voltage and a ground connection, a serially connected arrangement of a first conductivity type first transistor (TN1) and a reference voltage source, said reference voltage source comprising a plurality of transistors of a second conductivity type opposite said first type, each of said plurality of transistors being made into a respective separate well made in said substrate, said well connected to a source electrode of a respective one of said transistors made in this well, each of said plurality of transistors having a gate electrode and a drain electrode connected together.
Claim 2
Independent Claim
124 words
A device for detecting a high threshold voltage of a supply voltage in a circuit constructed by MOS technology on a substrate, said device comprising, between a supply connection which receives said supply voltage and a ground connection, a serially connected arrangement of a first conductivity type first transistor (TN1) and a reference voltage source, said reference voltage source comprising a plurality of transistors of a second conductivity type opposite said first type, each of said plurality of transistors being made into a respective separate well made in said substrate, said well connected to a source electrode of a respective one of said transistors made in this well, each of said plurality of transistors having a gate electrode and a drain electrode connected together.
Claim 3
Dependent Claim
94 words
A device according to claim 1, further comprising a second transistor of said first conductivity type, having a gate electrode, a source electrode and a drain electrode, said gate connected to a junction point between said first transistor of the first type of conductivity and the voltage reference source, said source electrode being connected to the ground connection through means capable of increasing the voltage across itself when it is fed by a current, and said drain electrode constitutes an output of the device and is connected to the supply connection through a switch.
Claim 4
Dependent Claim
65 words
A device according to claim 2, wherein said means capable of increasing its voltage is a third transistor of the first conductivity type having a gate electrode a source electrode and a drain electrode, said gate electrode connected to the supply connection, said source electrode connected to ground, and said drain electrode connected to the source electrode of said second transistor of said first type.
Claim 5
Dependent Claim
59 words
A device according to claim 2, wherein said switch comprises a MOS transistor of said second conductivity type having a gate electrode, a source electrode and a drain electrode, said source electrode being connected to the supply connection, said gate connected to ground, and said drain connected to the drain of the second transistor of the first conductivity type.
Claim 6
Dependent Claim
45 words
A device according to claim 4, wherein said MOS transistor of said switch has a channel width to length ratio much lower than 1 and the second transistor of said first type of conductivity has a channel width to length ratio much greater than 1.
Claim 7
Dependent Claim
34 words
A device according to claim 5, wherein said channel, width to length ratio much lower than 1 is substantially 0.1 and the channel width to length ratio much greater than 1 is substantially 5.
Claim 8
Dependent Claim
123 words
A device according to claim 2 wherein said switch comprises: a transistor of the second type of conductivity having a source electrode connected to the supply connection, a gate electrode connected to an output of an inverter, and a drain electrode connected to an input of said inverter, said input also connected to the drain of the second transistor of said first conductivity type, and an additional transistor of said second conductivity type having a source electrode and a drain electrode respectively connected to the source and drain electrodes of the first mentioned transistor of said switch, said other transistor having a gate for receiving a starting signal upon powering of the circuit so as to be temporarily rendered conductive and thereafter blocked.
References Cited (Backward Citations)
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US4626704A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-17 | 1999-09-16 | 2000-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-17 | 2003-09-16 | 2004-03-17 | $7700.00 | Window Closed / Lapsed |