Refractory metal ohmic contacts and method

Claim 2

The process of forming a refractory metal ohmic contact on a group III-V semiconductor substrate comprising the steps of: forming an implant-metalization mask on the group III-V semiconductor substrate with at least one window in said mask, implanting said group III-V semiconductor substrate with a group II metal ion selected from the group consisting of zinc, beryllium, cadmium and magnesium through said window in said implant-metalization mask to form an implanted p-type conductive region in said group III-V semiconductor substrate; maintaining said implant-metalization mask on said group III-V semiconductor substrate, depositing through said window in said implant-metalization mask a refractory metal selected from the group consisting of molybdenum, tungsten and tantalum in contact with said implanted conductive region of said group III-V semiconductor substrate to form a refractory ohmic contact to said implanted conductive region of said group III-V semiconductor substrate, and subsequently thermally activating said implanted conductive region of said group III-V semiconductor substrate to enable said refractory ohmic contact to a specific contact resistance of less than about 10 -6 ohms-cm 2 .

Claim 3

The process of claim 1 wherein: said mask formation step includes the application of a silicon dioxide layer on said group III-V semiconductor substrate.

Claim 4

The process of claim 1 further wherein: said refractory metal is molybdenum.

Claim 5

The process of claim 1 wherein: the step of depositing said refractory metal comprises the successive placement of a molybdenum layer and a chromium layer by vapor deposition.

Claim 6

The process of claim 3 wherein; previously to said activation step, a passivation layer is deposited over said molybdenum layer.

Claim 7

The process of claim 5 wherein: said passivation layer includes a layer of chromium followed by a layer of silicon nitride.

Claim 8

The process of claim 1 wherein: said refractory metal is molybdenum; and said substrate is gallium arsenide.

Claim 9

The process of claim 7 wherein: the depositing of said molybdenum layer is accomplished by vapor deposition; and further including the step of depositing a passivation layer over said molybdenum layer.

Claim 10

The process of claim 1 wherein: previously to the activation step, a passivation layer is deposited on the ohmic contact.

Claim 11

The process of claim 9 wherein: said passivation is accomplished by the vapor deposition of chromium followed by the sputter deposition of silicon nitride.

Claim 12

The process of claim 1 wherein: said group III-V semiconductor substrate is selected from the group consisting of gallium arsenide, gallium phosphide, gallium antimide, indium arsenide, indium phosphide, indium antimide and lattice matched heterosystems of gallium, indium, antimony, phorphorus, arsenic and aluminum

Claim 13

The process of claim 1 wherein: said group III-V semiconductor is selected from the group consisting of gallium arsenide, gallium aluminum arsenide and indium gallium arsenide.

Claim 14

The process of claim 1 wherein: said group III-V semiconductor substrate is gallium arsenide.

Claim 15

The process of forming a refractory metal ohmic contact on a group III-V semiconductor substrate comprising the steps of: forming an implant-metalization mask on the group III-V semiconductor substrate with at least one window in said mask; depositing a refractory metal selected from the group consisting of molybdenum, tungsten and tantalum through said window in said implant-metalization mask; maintaining said implant-metalization mask on said group III-V semiconductor substrate; implanting said group III-V semiconductor substrate with a group II metal ion selected from the group consisting of zinc, beryllium, cadmium and magnesium through both said window in said implant-metalization mask and said refractory metal to form an implanted conductive region in said group III-V semiconductor substrate below and in contact with said refractory metal whereby said refractory metal forms a refractory ohmic contact to said implanted conductive region of said group III-V semiconductor substrate; and subsequently thermally activating said implanted conductive region of said group III-V semiconductor substrate to enable said refractory ohmic contact to a specific contact resistance of less than about 10 -6 ohms-cm 2 .

Claim 16

The process of forming a refractory metal ohmic contact on a group III-V semiconductor substrate comprising the steps of: forming an implant-metalization mask on the group III-V semiconductor substrate with at least one window in said mask; depositing a refractory metal selected from the group consisting of molybdenum, tungsten and tantalum through said window in said implant-metalization mask; maintaining said implant-metalization mask on said group III-V semiconductor substrate; implanting said group III-V semiconductor substrate with a group II metal ion selected from the group consisting of zinc, beryllium, cadmium and magnesium through both said window in said implant-metalization mask and said refractory metal to form an implanted conductive region in said group III-V semiconductor substrate below and in contact with said refractory metal whereby said refractory metal forms a refractory ohmic contact to said implanted conductive region of said group III-V semiconductor substrate; and subsequently thermally activating said implanted conductive region of said group III-V semiconductor substrate to enable said refractory ohmic contact to a specific contact resistance of less than about 10 -6 ohms-cm 2 .

Claim 17

The process for producing an ohmic contact on a gallium arsenide semiconductor substrate comprising the steps of: applying an implant-metalization mask over said substrate, said mask including at least a silicon dioxide layer; forming a window in said mask; ion-implanting a group II metal selected from the group consisting of zinc, beryllium, cadmium and magnesium into the substrate through the windows in the mask to form a buried p-type contact region in said substrate; maintaining said mask on said substrate; depositing a refractory metal ohmic contact selected from the group consisting of molybdenum, tungsten and tantalum in said window in said mask to make electrical contact with the implanted p-type contact region within said substrate, said refractory metal ohmic contact deposition step performed either before the ion implantation or after the ion implantation; and subsequently thermally activating the metal in the implanted contact to enable said refractory ohmic contact to a specific contact resistance of less than about 10 -6 ohms-cm 2 .

Claim 18

The process for producing an ohmic contact on a gallium arsenide semiconductor substrate comprising the steps of: applying an implant-metalization mask over said substrate, said mask including at least a silicon dioxide layer; forming a window in said mask; ion-implanting a group II metal selected from the group consisting of zinc, beryllium, cadmium and magnesium into the substrate through the windows in the mask to form a buried p-type contact region in said substrate; maintaining said mask on said substrate; depositing a refractory metal ohmic contact selected from the group consisting of molybdenum, tungsten and tantalum in said window in said mask to make electrical contact with the implanted p-type contact region within said substrate, said refractory metal ohmic contact deposition step performed either before the ion implantation or after the ion implantation; and subsequently thermally activating the metal in the implanted contact to enable said refractory ohmic contact to a specific contact resistance of less than about 10 -6 ohms-cm 2 .

Claim 19

The process of claim 15 further including the step of applying a passivation layer over the refractory metal ohmic contact prior to said thermal activation.