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US5091047A
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Plasma etching using a bilayer mask
Assignee: National Semiconductor Corp
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Filing: 1991-07-22
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Granted: 1992-02-25
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Expires: 2011-07-22
Abstract
Abstract A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.
Inventors
- 👤 James M. Cleeves
- 👤 James G. Heard
- 👤 Zoilo C. H. Tan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:03
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/28; H10P50/282; H10P50/283; H10P50/73; H10P76/00; H10P76/20; H10P76/204; H10P76/2045; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
109 words
A method for etching a silicon dioxide dielectric layer on a semiconductor substrate, said method comprising: forming a layer of aluminum having a thickness in the range from about 100 to 1000 Å over the dielectric layer; forming a thin resist layer having a thickness in the range from about 0.2 to 2 μm over the aluminum layer; photolithographically patterning the resist layer to form a first mask; etching the aluminum layer through the first mask to form a second mask; plasma etching the dielectric layer through the second mask with a fluorinated hydrocarbon or oxygen plasma, wherein said plasma etching removes the resist layer from the aluminum layer.
Claim 2
Independent Claim
109 words
A method for etching a silicon dioxide dielectric layer on a semiconductor substrate, said method comprising: forming a layer of aluminum having a thickness in the range from about 100 to 1000 Å over the dielectric layer; forming a thin resist layer having a thickness in the range from about 0.2 to 2 μm over the aluminum layer; photolithographically patterning the resist layer to form a first mask; etching the aluminum layer through the first mask to form a second mask; plasma etching the dielectric layer through the second mask with a fluorinated hydrocarbon or oxygen plasma, wherein said plasma etching removes the resist layer from the aluminum layer.
Claim 3
Dependent Claim
24 words
A method as in claim 1, wherein the resist is a photoresist having a thickness in the range from about 0.2 to 2 μm.
Claim 4
Dependent Claim
26 words
A method as in claim 1, wherein the resist is an electron beam resist having a thickness in the range from about 0.2 to 2 μm.
Claim 5
Dependent Claim
25 words
A method as in claim 1, wherein the resist is an x-ray resist having a thickness in the range from about 0.2 to 2 μm.
Claim 6
Dependent Claim
16 words
A method as in claim 1, wherein the aluminum layer is formed by sputtering or evaporation.
Claim 7
Dependent Claim
13 words
A method as in claim 1, wherein the aluminum layer is wet etched.
Claim 8
Dependent Claim
13 words
A method as in claim 1, wherein the aluminum layer is dry etched.
References Cited (Backward Citations)
US4092210A
Cited
US4484978A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |