Semiconductor pressure sensor connected to a support element

Claim 2

A pressure sensor comprising: said semiconductor substrate being provided with a recess in the second major surface thereof extending toward the first major surface so as to define relatively thick peripheral edge regions bounding the recess and a relatively thin pressure-sensitive diaphragm extending between said relatively thick edge regions and connected thereto; a support element having an opening therethrough and providing an inner peripheral support surface in opposed relation to the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; elastomeric means interposed between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and providing a peripheral seal between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; at least one integrated component provided in a relatively thick edge region of said semiconductor substrate adjacent to said pressure-sensitive diaphragm and opening onto the first major surface of said semiconductor substrate; the second major surface of said semiconductor substrate being free of obstruction and positioned for exposure to pressure introduced into the opening through said support element; the relatively thin pressure-sensitive diaphragm of said semiconductor substrate being disposed in the opening through said support element and being responsive to pressure introduced into the opening through said support element and entering the recess provided in said semiconductor substrate to undergo mechanical deformation; said at least one integrated component having an electrical parameter subject to variation in response to mechanical deformation of said pressure-sensitive diaphragm under the influence of pressure, the variation in the electrical parameter of said at least one integrated component being proportional to the magnitude of the mechanical deformation of said pressure-sensitive diaphragm, thereby being indicative of a measurement of the pressure to which said relatively thin pressure-sensitive diaphragm is exposed; and the sealing action of said elastomeric means between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate increasing in response to the introduction of the pressure being measured into the opening through said support element and through the recess provided in said semiconductor substrate to impinge upon the relatively thin pressure-sensitive diaphragm of said semiconductor substrate.

Claim 3

A pressure sensor as set forth in claim 1, wherein a plurality of integrated components are provided in said relatively thick edge regions of said semiconductor substrate adjacent to said relatively thin pressure-sensitive diaphragm, each of said integrated components opening onto the first major surface of said semiconductor substrate and having respective electrical parameters subject to variation in response to mechanical deformation of said relatively thin pressure-sensitive diaphragm under the influence of pressure.

Claim 4

A pressure sensor as set forth in claim 2, wherein said plurality of integrated components are resistors.

Claim 5

A pressure sensor as set forth in claim 1 wherein said support element is provided with a counterbore to define a shoulder along the inner periphery thereof at the juncture between the opening and the counterbore and extending outwardly from the opening for providing said inner peripheral support surface to which the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate is in opposed relation with said elastomeric means interposed therebetween.

Claim 6

A pressure sensor as set forth in claim 4, further including a housing defining a chamber in which said support element is fixedly mounted; and said housing having an input port in registration with the counterbore and the opening in said support element and the recess provided in said semiconductor substrate for introduction of the pressure to be measured.

Claim 7

A pressure sensor as set forth in claim 1, wherein mechanical decoupling means are provided between said support element and said relatively thin pressure-sensitive diaphragm of said semiconductor substrate for preventing mechanical deformations in said semiconductor substrate caused by temperature changes in said support element from causing mechanical deformations of said relatively thin pressure-sensitive diaphragm.

Claim 8

A pressure sensor as set forth in claim 6, wherein said mechanical decoupling means comprises a depression formed in said relatively thick peripheral edge regions of said semiconductor substrate and surrounding said relatively thin pressure-sensitive diaphragm, said depression opening onto the first major surface of said semiconductor substrate and being disposed between said relatively thin pressure-sensitive diaphragm and said elastomeric means providing the peripheral seal between the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and said inner peripheral support surface of said support element.

Claim 9

A pressure sensor as set forth in claim 1, wherein said elastomeric means is made of a material taken from the class including silicone rubber, butyl rubber and nitrile rubber.

Claim 10

A pressure sensor comprising: a substrate of semiconductor material having first and second major surfaces; said semiconductor substrate being provided with a recess in the second major surface thereof extending toward the first major surface so as to define relatively thick peripheral edge regions bounding the recess and a relatively thin pressure-sensitive diaphragm extending between said relatively thick edge regions and connected thereto; a support element having an opening therethrough and providing an inner peripheral support surface in opposed relation to the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; elastomeric means interposed between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and providing a peripheral seal between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; at least one integrated component provided in a relatively thick edge region of said semiconductor substrate adjacent to said pressure-sensitive diaphragm and opening onto the first major surface of said semiconductor substrate; the second major surface of said semiconductor substrate being free of obstruction and positioned for exposure to pressure introduced into the opening through said support element; the relatively thin pressure-sensitive diaphragm of said semiconductor substrate being disposed in the opening through said support element and being responsive to pressure introduced into the opening through said support element and entering the recess provided in said semiconductor substrate to undergo mechanical deformation; said at least one integrated component having an electrical parameter subject to variation in response to mechanical deformation of said pressure-sensitive diaphragm under the influence of pressure, the variation in the electrical parameter of said at least one integrated component being proportional to the magnitude of the mechanical deformation of said pressure-sensitive diaphragm, thereby being indicative of a measurement of a pressure to which said relatively thin pressure-sensitive diaphragm is exposed; the sealing action of said elastomeric means between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate increasing in response to the introduction of the pressure being measured into the opening through said support element and through the recess provided in said semiconductor substrate to impinge upon the relatively thin pressure-sensitive diaphragm of said semiconductor substrate; said semiconductor substrate being provided with a depression formed in said relatively thick peripheral edge regions of said semiconductor substrate and surrounding said relatively thin pressure-sensitive diaphragm, said depression opening onto the first major surface of said semiconductor substrate and being disposed between said relatively thin pressure-sensitive diaphragm and said elastomeric means providing the peripheral seal between the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and said inner peripheral support surface of said support element; and said depression being disposed inwardly with respect to said inner peripheral support surface of said support element for isolating said relatively thin pressure-sensitive diaphragm of said semiconductor substrate from mechanical deformations in said support element caused by temperature changes in said support element.

Claim 11

A pressure sensor comprising: a substrate of semiconductor material having first and second major surfaces; said semiconductor substrate being provided with a recess in the second major surface thereof extending toward the first major surface so as to define relatively thick peripheral edge regions bounding the recess and a relatively thin pressure-sensitive diaphragm extending between said relatively thick edge regions and connected thereto; a support element having an opening therethrough and providing an inner peripheral support surface in opposed relation to the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; elastomeric means interposed between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and providing a peripheral seal between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate; at least one integrated component provided in a relatively thick edge region of said semiconductor substrate adjacent to said pressure-sensitive diaphragm and opening onto the first major surface of said semiconductor substrate; the second major surface of said semiconductor substrate being free of obstruction and positioned for exposure to pressure introduced into the opening through said support element; the relatively thin pressure-sensitive diaphragm of said semiconductor substrate being disposed in the opening through said support element and being responsive to pressure introduced into the opening through said support element and entering the recess provided in said semiconductor substrate to undergo mechanical deformation; said at least one integrated component having an electrical parameter subject to variation in response to mechanical deformation of said pressure-sensitive diaphragm under the influence of pressure, the variation in the electrical parameter of said at least one integrated component being proportional to the magnitude of the mechanical deformation of said pressure-sensitive diaphragm, thereby being indicative of a measurement of a pressure to which said relatively thin pressure-sensitive diaphragm is exposed; the sealing action of said elastomeric means between said inner peripheral support surface of said support element and the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate increasing in response to the introduction of the pressure being measured into the opening through said support element and through the recess provided in said semiconductor substrate to impinge upon the relatively thin pressure-sensitive diaphragm of said semiconductor substrate; said semiconductor substrate being provided with a depression formed in said relatively thick peripheral edge regions of said semiconductor substrate and surrounding said relatively thin pressure-sensitive diaphragm, said depression opening onto the first major surface of said semiconductor substrate and being disposed between said relatively thin pressure-sensitive diaphragm and said elastomeric means providing the peripheral seal between the first major surface at the relatively thick peripheral edge regions of said semiconductor substrate and said inner peripheral support surface of said support element; and said depression being disposed inwardly with respect to said inner peripheral support surface of said support element for isolating said relatively thin pressure-sensitive diaphragm of said semiconductor substrate from mechanical deformations in said support element caused by temperature changes in said support element.