Pulsed driver circuit

Claim 2

A modulator circuit for providing pulses of electrical energy to an electrical load in response to a trigger signal, the modulator circuit including in combination: first capacitive means having an electrical charge stored therein; normally nonconductive electron control means having first and second main electrodes and a control electrode; series circuit path including the electrical load, said first capacitive means and said main electrodes; thyristor means coupled to said control electrode of said electron control means; trigger signal supply means for supplying the trigger signal, said trigger signal supply means being coupled to said thyristor means; and said trigger signal rendering said thyristor means conductive to thereby render said electron control means conductive between said main electrodes thereof to discharge said first capacitive means through the electrical load to provide a pulse of electrical energy to the electrical load.

Claim 3

The modulator circuit of claim 1 further including: power conductor means; and resistive means coupling said power conductor means to said first capacitive means to provide said electrical charge therein.

Claim 4

The modulator circuit of claim 1 wherein said electron control means includes a MOSFET means with source, drain and gate electrodes, said MOSFET means also having a low "on" resistance on the order of one ohm between said source and drain electrodes and a fast rise time of approximately three nanoseconds, said source and drain electrodes corresponding to said main electrodes of said electron control means and said gate electrode corresponding to said control electrode of said electron control means.

Claim 5

The modulator circuit of claim 1 wherein: said thyristor means includes a silicon controlled rectifier having anode, cathode and gate electrodes; first and second power supply conductors; second capacitive means having an electrical charge stored therein; first means coupling said second capacitive means to one of said anode and cathode electrodes and to at least one of said first and second power supply conductors; said gate electrode of said silicon controlled rectifier being coupled to said trigger signal supply means; first resistive means coupling said other of said anode and cathode electrodes to said second power supply conductor, and said first resistive means also being coupled to said control electrode of said electron control means; and said silicon controlled rectifier being rendered conductive in response to the trigger signal to discharge said second capacitive means through said first resistive means to provide a control signal for rendering said electron control means conductive.

Claim 6

The modulator circuit of claim 4 wherein said first means includes second resistive means coupling said second capacitive means to said first power supply conductor.

Claim 7

The modulator circuit of claim 1 wherein the electrical load includes a laser diode means.

Claim 8

The modulator circuit of claim 6 further including protective diode means coupled in parallel with said laser diode means.

Claim 9

An optical range sensor having a modulator circuit for selectively providing a pulse of electrical energy having a rapid rise time to a laser diode in response to a trigger signal, the modulator including in combination: first capacitive means having an electrical charge stored therein; silicon controlled rectifier having anode, cathode and gate electrodes, one of said anode and cathode electrodes being coupled to said first capacitive means; normally nonconductive MOSFET means having gate, source and drain electrodes, said gate electrode being coupled to the other of said anode and cathode electrodes of said silicon controlled rectifier; second capacitive means having an electrical charge stored therein; a series circuit path including the laser diode, said second capacitive means and said source and drain electrodes; and said silicon controlled rectifier being rendered conductive in response to a trigger signal to discharge said first capacitive means to provide a control signal which renders said MOSFET means conductive to discharge said second capacitive means through the laser diode to provide the pulse of electrical energy having the rapid rise time to said laser diode which provides a light pulse also having a rapid rise time.

Claim 10

An optical range sensor having a modulator circuit for selectively providing a pulse of electrical energy having a rapid rise time to a laser diode in response to a trigger signal, the modulator including in combination: first capacitive means having an electrical charge stored therein; silicon controlled rectifier having anode, cathode and gate electrodes, one of said anode and cathode electrodes being coupled to said first capacitive means; normally nonconductive MOSFET means having gate, source and drain electrodes, said gate electrode being coupled to the other of said anode and cathode electrodes of said silicon controlled rectifier; second capacitive means having an electrical charge stored therein; a series circuit path including the laser diode, said second capacitive means and said source and drain electrodes; and said silicon controlled rectifier being rendered conductive in response to a trigger signal to discharge said first capacitive means to provide a control signal which renders said MOSFET means conductive to discharge said second capacitive means through the laser diode to provide the pulse of electrical energy having the rapid rise time to said laser diode which provides a light pulse also having a rapid rise time.

Claim 11

The modulator of claim 8 further including charging means coupled to said first and said second capacitive means.

Claim 12

The modulator of claim 8 further including resistive means connected in series with said silicon controlled rectifier means and to said gate electrode of said MOSFET means and said resistive means providing said control signal in response to said silicon controlled rectifier being rendered conductive.

Claim 13

The modulator circuit of claim 10 wherein said MOSFET means has "on" resistance on the order of one ohm between said source and drain electrodes thereof and a fast rise time of approximately three nanoseconds.