Ion implantation equipment

Claim 2

An ion implantation equipment for implanting ion beam into an implanting target, wherein: plasma is generated and an electron generated by said plasma is induced to said ion beam; said ion implantation equipment comprises; a Faraday enclosing said ion beam before said implanting target; a plasma generation chamber provided in a part of a wall surface of said Faraday and projecting inward and outward from the wall surface; an electron discharging source in said plasma generating chamber; a through hole in said part of a wall surface of said Faraday for sending generated plasma into said Faraday from said chamber; and a variable bias voltage supply source for applying a bias voltage to said Faraday.

Claim 3

An ion implantation equipment according to claim 1, wherein a filament provided in said chamber is provided at the position where said chamber cannot face said implanting target.

Claim 4

An ion implantation equipment according to claim 1, wherein a conductive plate for monitoring the amount of electric charges accumulated in the insulating film region of the surface of said implanting material is provided in opposite to a disc on which said implanting equipment is mounted.

Claim 5

An ion implantation equipment according to claim 1, wherein the diameter of said through hole is about 2 mm.

Claim 6

An ion implantation equipment according to claim 1, wherein a cooling system is attached to said chamber.

Claim 7

An ion implantation equipment for implanting ion beam into an implanting target, which comprises: a Faraday enclosing said ion beam before said implanting target; a plasma generation chamber provided in a part of a wall surface of said Faraday to be projected inward and outward from the wall surface; an electron discharging source in said chamber; a through hole in said part of a wall surface of said Faraday for sending generated plasma into said Faraday; a variable bias voltage supply source for applying a bias voltage to said Faraday; and wherein electrons are injected to said ion beam being injected to said implanting target.

Claim 8

An ion implantation equipment for implanting ion beam into an implanting target, which comprises: a Faraday enclosing said ion beam before said implanting target; a plasma generation chamber provided in a part of a wall surface of said Faraday to be projected inward and outward from the wall surface; an electron discharging source in said chamber; a through hole in said part of a wall surface of said Faraday for sending generated plasma into said Faraday; a variable bias voltage supply source for applying a bias voltage to said Faraday; and wherein electrons are injected to said ion beam being injected to said implanting target.

Claim 9

An ion implantation apparatus for implanting ion beam into a target, comprising: (a) a Faraday enclosing the ion beam in front of the target; (b) a plasma generating chamber provided in a part of a wall surface of said Faraday to be projected inward and outward from the wall surface, wherein said plasma generating chamber conceals the target from view and communicates with said Faraday through a small through hole; (c) a filament provided in said plasma generating chamber for emitting electrons; (d) a bias voltage supply source for applying a bias voltage to said Faraday; (e) detecting means for detecting an amount of electric charge accumulated in the insulating film region of the surface of said target; and (f) a cooling system provided to said plasma generating chamber; whereby electrons are introduced from said plasma generating chamber into said Faraday through said small through hole.

Claim 10

An ion implantation apparatus for implanting ion beam into a target, comprising: (a) a Faraday enclosing the ion beam in front of the target; (b) a plasma generating chamber provided in a part of a wall surface of said Faraday to be projected inward and outward from the wall surface, wherein said plasma generating chamber conceals the target from view and communicates with said Faraday through a small through hole; (c) a filament provided in said plasma generating chamber for emitting electrons; (d) a bias voltage supply source for applying a bias voltage to said Faraday; (e) detecting means for detecting an amount of electric charge accumulated in the insulating film region of the surface of said target; and (f) a cooling system provided to said plasma generating chamber; whereby electrons are introduced from said plasma generating chamber into said Faraday through said small through hole.

Claim 11

An ion implantation apparatus according to claim 7, further comprising: a controller for controlling said bias voltage supply source based on the amount of electric charge detected by said detecting means.

Claim 12

An ion implantation apparatus according to claim 7, wherein the diameter of said small through hole falls within a range of between 1 and 3 mm.

Claim 13

An ion implantation apparatus according to claim 7, wherein a DC voltage of 13 to 22 V is applied between said plasma generating chamber and said filament.

Claim 14

An ion implantation apparatus according to claim 7, which further comprises: means for rotating said target relative to an ion beam.